Infineon Technologies CY7C1318BV18-167BZC
- Part No.:
- CY7C1318BV18-167BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1318BV18-167BZC.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1318BV18-167BZC from Cypress Semiconductor is a 18-Mbit (1M × 18) DDR-II synchronous pipelined SRAM with 2-word burst architecture, 167 MHz maximum operating frequency, 1.8V core supply, and HSTL I/O interface - used in high-bandwidth networking packet buffers and FPGA co-processor memory subsystems.
For engineers reviewing the CY7C1318BV18-167BZC datasheet, CY7C1318BV18-167BZC pinout, CY7C1318BV18-167BZC application, or CY7C1318BV18-167BZC equivalent, key selection criteria include DDR timing alignment via dual echo clocks (CQ/CQ), programmable output drive strength, DLL-assisted data placement accuracy, and JTAG 1149.1 test access support.
Technical Context
This SRAM implements a synchronous pipelined architecture with internal self-timed writes and dual-clock domain operation: K/K for address/control/data input registration, and C/C for output data timing. The burst counter uses A0 as its LSB input to sequence two 18-bit words per access.
It integrates a Delay Lock Loop (DLL) to align echo clocks (CQ/CQ) with output data edges, enabling reliable capture at 334 Mbps per data line (600 MT/s effective DDR rate). HSTL-compatible I/O supports 1.4V–1.8V output swing with ZQ impedance calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1,048,576 × 18 configuration) |
| Max Clock Frequency | 167 MHz - defines maximum sustained burst transaction rate of 334 million transfers/sec |
| Data Rate | 600 MT/s DDR - achieves 1.08 GB/s peak bandwidth with 18-bit bus |
| Core Supply | 1.8 V ± 0.1 V - powers SRAM array and internal logic; enables low-power high-speed operation |
| I/O Standard | HSTL Class I - provides controlled-impedance 1.4V–1.8V swing compatible with FPGA/ASIC memory controllers |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - supports fine-pitch routing and thermal dissipation in dense PCB layouts |
| Operating Temperature | 0 °C to +70 °C - qualified for commercial industrial applications without extended temp grading |
Pinout & Package
165-ball Fine-Pitch Ball Grid Array (FBGA) package, 13 mm × 15 mm footprint, 1.4 mm height, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data I/O | 18-bit DDR data bus; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo clock alignment |
| K, K | Input clock pair | Complementary clocks for address, control, and write data latching; only rising edges used for synchronization |
| C, C | Output clock pair | Complementary clocks for read data output timing; enables skew-insensitive capture when paired with CQ/CQ |
| CQ, CQ | Echo clock outputs | Phase-aligned copies of C/C; routed alongside DQ to simplify PCB trace length matching and timing closure |
| A[19:0] | Synchronous address input | 20-bit multiplexed address bus; A0 drives internal burst counter for sequential 18-bit word access |
| R/W | Read/write direction control | Active-HIGH synchronous signal determining data flow direction on next valid cycle |
| BWS[1:0] | Byte write select | Two active-LOW signals selecting which 9-bit byte (D[8:0] or D[17:9]) is written during burst operation |
| LD | Load enable | Active-LOW signal initiating each burst transaction; defines start of address and R/W setup window |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor to ground; calibrates HSTL output driver strength and termination |
| TDO/TCK/TMS/TDI | JTAG boundary scan interface | IEEE 1149.1 compliant test access port supporting device-level diagnostics and system-level interconnect testing |
Key Features
| Feature | Design Value |
|---|---|
| 2-Word Burst Architecture | Reduces external address bus toggling by 50% per transaction, lowering EMI and simplifying controller address generation logic |
| Delay Lock Loop (DLL) | Eliminates static phase offset between CQ/CQ and DQ edges, enabling deterministic setup/hold margins at 167 MHz clock rate |
| Variable Drive HSTL Outputs | Programmable output strength via ZQ calibration ensures consistent signal integrity across voltage/temperature/process corners |
| Dual Clock Domains (K/K and C/C) | Decouples input sampling from output timing, allowing independent optimization of read and write timing paths in system design |
| JTAG 1149.1 Test Access | Enables in-system verification of board-level interconnects and SRAM I/O pin functionality without requiring functional memory access |
Applications
| Networking Packet Buffer | FPGA Co-Processor Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet line cards before classification or forwarding decisions. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfaced to network processor and traffic manager ASICs via DDR-II protocol. Use Value: 600 MT/s DDR bandwidth sustains full line-rate packet buffering with sub-10 ns read latency and deterministic burst timing. |
Use Scenario: Providing scratchpad memory for real-time digital signal processing kernels running on Xilinx Virtex-7 or Intel Stratix 10 FPGAs. IC Role / Device Role / Timing Role: Synchronous pipelined memory resource synchronized to FPGA fabric clock domains using echo clock feedback. Use Value: DLL-aligned CQ/CQ outputs eliminate need for FPGA-based deskew logic, reducing resource usage and timing closure effort. |
| Telecom Baseband Processing | Industrial Motion Control Buffer |
|
Use Scenario: Holding intermediate FFT and channel estimation results in LTE/LTE-A baseband units where deterministic latency is critical. IC Role / Device Role / Timing Role: Burst-accessed memory block supporting parallel read-modify-write operations under strict jitter-constrained timing budgets. Use Value: Self-timed write circuitry guarantees consistent 167 MHz write completion time regardless of internal array location. |
Use Scenario: Acting as cyclic buffer for multi-axis servo position profiles in CNC machine controllers requiring jitter-free data streaming. IC Role / Device Role / Timing Role: Deterministic latency SRAM interfaced to ARM Cortex-R5 real-time MCU with HSTL-capable memory controller. Use Value: 1.8V core and HSTL I/O minimize power delivery noise, preserving analog feedback loop stability in mixed-signal motion systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR-II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS45S16160J-6BLI | 16-Mbit (1M × 16), 200 MHz max, 2.5V core, SSTL-2 I/O - lacks DLL and echo clocks | Requires external phase alignment circuitry; unsuitable for systems needing guaranteed 167+ MHz DDR timing closure | Select when cost sensitivity outweighs timing margin requirements and controller supports SSTL-2 |
| MT46H128M16LF-6 IT:F | 2-Gbit DDR2 SDRAM, 333 MHz, 1.8V, requires refresh and initialization sequence | Higher density but asynchronous initialization and refresh overhead increase software complexity and latency unpredictability | Select only when >18 Mbit capacity is mandatory and deterministic burst latency is secondary to storage size |
Compared with IS45S16160J-6BLI and MT46H128M16LF-6 IT:F, CY7C1318BV18-167BZC uniquely delivers deterministic 167 MHz DDR-II timing without refresh, DLL-assisted data alignment, and HSTL compatibility - making it optimal for latency-critical embedded memory subsystems.
Availability
CY7C1318BV18-167BZC is available at Aetrix Electronics and suitable for networking packet buffers, FPGA co-processor memory, and telecom baseband processing requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for CY7C1318BV18-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, with expertise in SRAM, NOR flash, and PSoC architectures.
CY7C1318BV18 belongs to the DDR-II SRAM product line engineered specifically for deterministic-latency, high-bandwidth memory interfacing in FPGA- and ASIC-based communications infrastructure.
FAQ
What is the function of the LD (Load) pin in CY7C1318BV18-167BZC?
The LD pin is an active-LOW synchronous signal that initiates each burst transaction. When asserted, it defines the start of the address and R/W setup window for the upcoming 2-word burst. It must be held stable for at least one K clock cycle before valid address and control signals are presented, and remains active throughout the burst sequence.
How does the DLL improve timing performance in this SRAM?
The integrated Delay Lock Loop dynamically adjusts internal delay paths to align the rising edges of echo clocks CQ/CQ precisely with the center of the valid data window on DQ[17:0]. This eliminates static phase error caused by process/voltage/temperature variation, ensuring setup and hold margins remain positive at 167 MHz without external deskew circuitry.
Can CY7C1318BV18-167BZC operate in single-clock mode?
Yes - when C and C pins are left unconnected or tied inactive, the device defaults to single-clock mode using K and K for both input sampling and output timing. In this mode, read data is driven on the rising edges of K/K instead of C/C, and echo clocks CQ/CQ are disabled. Timing parameters shift accordingly, with reduced maximum frequency.
What is the role of the ZQ pin and how is it used?
ZQ is a dedicated reference pin for HSTL output driver calibration. It must be connected to a precision 240 Ω resistor to ground. During power-up or upon command, the SRAM measures this reference to adjust internal current sources, ensuring consistent output impedance (±15%) and voltage swing (1.4V–1.8V) across temperature and supply variations.
CY7C1318BV18-167BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1318BV18-167BZC FAQ
1.How can I place an order for CY7C1318BV18-167BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1318BV18-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1318BV18-167BZC reliable?
The price and inventory of CY7C1318BV18-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1318BV18-167BZC is usually 5 days.
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Once your CY7C1318BV18-167BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1318BV18-167BZC?
For technical support, including CY7C1318BV18-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1318BV18-167BZC requirements.
6.How does Aetrix verify that CY7C1318BV18-167BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1318BV18-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1318BV18-167BZC meets industry standards.
7.What is the process for return or replacement of CY7C1318BV18-167BZC?
All CY7C1318BV18-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1318BV18-167BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1318BV18-167BZC part is unused and in its original packaging.
Return procedure for CY7C1318BV18-167BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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