Infineon Technologies CY7C1318BV18-200BZI

Overview

CY7C1318BV18 from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined DDR-II SRAM with 300 MHz clock support, 2-word burst architecture, and HSTL I/O compatible with 1.8V core supply. It delivers 600 Mbps data transfer via double-data-rate interface and integrates echo clocks (CQ/CQ) for precise high-speed data capture in networking packet buffers and baseband memory subsystems.

For engineers reviewing the CY7C1318BV18 datasheet, CY7C1318BV18 pinout, CY7C1318BV18 application, or CY7C1318BV18 equivalent, key selection criteria include DDR-II timing alignment, 165-ball FBGA (13 × 15 × 1.4 mm) mechanical fit, 18-bit data width matching, DLL-enabled data placement accuracy, and HSTL-18 output drive compliance.

Technical Context

This device implements a synchronous pipelined architecture where all address, control, and data inputs are registered on rising edges of complementary K/K clocks. Read and write operations execute as 2-word bursts, with internal burst counter driven by A0 for sequential 18-bit word access across the 1M × 18 array.

Output timing is synchronized to C/C clocks, while echo clocks CQ/CQ-phase-aligned to C/C-enable source-synchronous data capture at the controller. The integrated Delay Lock Loop (DLL) eliminates clock skew between data and echo clocks, and ZQ pin supports dynamic output impedance calibration to match 50 Ω system buses.

Key Specifications

Pinout & Package

Delivered in a 165-ball FBGA package (13 × 15 × 1.4 mm) with 0.8 mm ball pitch. Pin assignments follow JEDEC MO-245AC standard and support HSTL-18 signaling with dedicated echo clock outputs and impedance calibration interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with CY7C1320BV18, CY7C1318BV18 offers deeper 1M-word depth at 18-bit width - better for sequential streaming with limited bus width. Versus IS42S16160J-6BLI, it provides zero-refresh, fixed-latency operation essential for deterministic real-time systems.

Availability

CY7C1318BV18 is available at Aetrix Electronics and suitable for telecom packet buffering, baseband signal processing, and industrial motion controller designs requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1318BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.

The CY7C13xxBV18 DDR-II SRAM product line targets deterministic-latency, high-bandwidth buffering in FPGA- and ASIC-based systems where DDR SDRAM's refresh overhead and variable access timing are unacceptable.

FAQ

What is the function of the DOFF pin on CY7C1318BV18?

The DOFF (DLL Turn Off) pin is an active-LOW control that disables the internal Delay Lock Loop. When grounded, the DLL is bypassed and output timing reverts to fixed-delay paths referenced directly to K/K clocks. This mode increases data-to-clock skew by up to 300 ps and is intended only for backward compatibility or specific timing validation scenarios-not for normal operation.

Can CY7C1318BV18 operate with only K and K clocks, without C and C?

Yes. In single-clock mode, CY7C1318BV18 uses K and K for both input registration and output data timing. Read data is driven on rising edges of K/K instead of C/C, and CQ/CQ are generated relative to K/K. This mode simplifies clock distribution but sacrifices the flight-time deskewing capability provided by independent C/C clocks.

How does ZQ pin calibration affect signal integrity?

ZQ calibration adjusts the output driver impedance of DQ, CQ, and CQ pins to match the system data bus characteristic impedance (typically 50 Ω). Using a 50 Ω resistor from ZQ to ground sets output impedance to 10 Ω (0.2 × 50 Ω), minimizing reflections and maintaining >75% eye height at 400 MT/s on 10 cm FR4 traces - critical for multi-drop DDR bus reliability.

What is the role of BWS[1:0] in CY7C1318BV18 write operations?

BWS[1:0] are active-LOW byte write select signals controlling 9-bit segments of the 18-bit DQ bus: BWS0 enables writes to DQ[8:0], BWS1 to DQ[17:9]. When either is HIGH, the corresponding 9-bit byte remains unchanged during the write cycle. This enables partial updates without read-modify-write sequences - essential for efficient coefficient table updates in DSP applications.