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Infineon Technologies CY7C1318BV18-278BZC

Part No.:
CY7C1318BV18-278BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1318BV18-278BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,920

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Product details

Overview

CY7C1318BV18 from Cypress Semiconductor is a 18-Mbit synchronous pipelined DDR-II SRAM configured as 1M × 18, operating at 300 MHz with double-data-rate transfers at 600 MHz, featuring dual input clocks (K/K) and echo clocks (CQ/CQ) for precise timing alignment in high-speed memory subsystems used in network packet buffers and telecom line cards.

For engineers reviewing the CY7C1318BV18 datasheet, CY7C1318BV18 pinout, CY7C1318BV18 application, or CY7C1318BV18 equivalent, key selection criteria include its 1.8V core supply, HSTL I/O compatibility, 2-word burst architecture, DLL-based data placement accuracy, and 165-ball FBGA package footprint-critical for DDR memory interface design and signal integrity validation.

Technical Context

The CY7C1318BV18 implements a synchronous pipelined architecture with internal burst counter driven by A0, delivering two sequential 18-bit words per access. All address, control, and data inputs are registered on rising edges of K and K clocks, enabling deterministic setup/hold timing.

Read data is output-synchronized to C and C clocks, with echo clocks CQ and CQ referenced to C and C respectively-eliminating board-level skew compensation. The integrated Delay Lock Loop (DLL) aligns output data edges to echo clock transitions with ±50 ps jitter tolerance at 300 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Density 18 Mbit (1M × 18 organization), supporting 2-word burst reads/writes without external address incrementing.
Max Clock Frequency 300 MHz K/K input clock, enabling 600 MT/s effective data rate via DDR interface.
Core Supply 1.8 V ±0.1 V VDD, powering SRAM core and internal logic; decoupling required per JEDEC JESD22-B109.
I/O Voltage VDDQ = 1.8 V, supporting HSTL Class I inputs and variable-drive HSTL outputs (1.4 V–1.8 V swing).
Package 165-ball Fine-Pitch BGA (13 mm × 15 mm × 1.4 mm), 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
Timing Control Integrated DLL ensures data-to-CQ/CQ alignment within ±50 ps over voltage/temperature, eliminating external phase alignment circuitry.
JTAG Support IEEE 1149.1-compliant TAP controller (TCK/TMS/TDI/TDO) for boundary-scan testing and debug visibility.

Pinout & Package

165-ball FBGA (13 × 15 × 1.4 mm, 0.8 mm pitch) with 18-bit bidirectional data bus (DQ[17:0]), dual differential clock pairs (K/K, C/C), echo clocks (CQ/CQ), load (LD), read/write (R/W), byte write selects (BWS[1:0]), address (A[19:0] with A0 driving burst counter), ZQ impedance calibration, DOFF for DLL disable, and dedicated power/ground balls (VDD, VDDQ, VSS).

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus 18-bit DDR data path; inputs sampled on K/K rising edges during writes, outputs driven on C/C rising edges during reads with CQ/CQ echo alignment.
K, K Positive/negative input clocks Rising edges latch all synchronous inputs (address, R/W, LD, BWS); define system timing reference for pipelined access initiation.
C, C Positive/negative output clocks Drive read data timing; paired with CQ/CQ to deskew flight time mismatches across multi-device memory channels.
CQ, CQ Output echo clocks Free-running clocks synchronized to C/C; enable source-synchronous capture at controller without trace-length matching between data and clock lines.
BWS[1:0] Byte write select inputs Active-low signals controlling 9-bit byte segments: BWS0 enables DQ[8:0], BWS1 enables DQ[17:9]; allow partial-word writes without read-modify-write cycles.
ZQ Impedance calibration reference Connects to external 240 Ω resistor to ground to calibrate output driver strength; sets Q[x:0] and CQ/CQ output impedance to 0.2 × RQ (48 Ω typical).

Key Features

Feature Design Value
2-Word Burst Architecture Reduces address bus toggling frequency by 50% versus single-word SRAMs-lowers EMI and simplifies controller address generation logic.
Integrated Delay Lock Loop (DLL) Eliminates need for external delay elements or PCB trace tuning; maintains <±50 ps data-to-clock alignment across -40°C to +85°C and 1.71–1.89 V VDD.
HSTL I/O with Variable Drive Supports 1.4 V–1.8 V output swing and programmable drive strength-enables optimization for signal integrity on varied trace lengths and loads.
Asynchronous ZQ Calibration Permits dynamic output impedance adjustment during operation; compensates for voltage/temperature drift without interrupting memory access.
JTAG 1149.1 Test Access Port Enables IEEE-compliant boundary-scan testing of interconnects and embedded logic-reduces test fixture complexity in high-density BGA layouts.

Applications

Network Packet Buffer Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC controllers via DDR interface.

Use Value: 600 MT/s throughput sustains full-duplex 10 GbE line rates; DLL-aligned CQ/CQ clocks simplify timing closure at 300 MHz controller interface.

Use Scenario: Frame buffering and header processing in OC-192/STM-64 SONET/SDH line cards.

IC Role / Device Role / Timing Role: Synchronous burst memory for ATM cell reassembly and traffic shaping engines.

Use Value: 1M × 18 configuration matches 18-bit internal datapath widths of telecom ASICs; HSTL I/O ensures clean signal integrity over 10+ inch backplane traces.

Baseband Processing Cache Industrial Real-Time Controller

Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE eNodeB baseband units.

IC Role / Device Role / Timing Role: Low-jitter DDR-II SRAM acting as scratchpad memory for DSP co-processors.

Use Value: Sub-100 ps DLL jitter enables reliable sampling at 300 MHz; 1.8 V core reduces power vs. 3.3 V QDR alternatives in thermally constrained RF modules.

Use Scenario: Deterministic data logging and motion profile buffering in CNC machine controllers.

IC Role / Device Role / Timing Role: Predictable-latency memory for real-time PLC sequencers requiring guaranteed burst completion within 2 ns jitter window.

Use Value: Synchronous pipelined architecture guarantees fixed 2-cycle read latency; JTAG support enables in-system verification of memory integrity during field maintenance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1318BV18-250BZC Rated for 250 MHz max clock (vs. 300 MHz); identical pinout, timing model, and feature set. Lower bandwidth requirement; suitable where system clock margin or thermal constraints limit to ≤250 MHz operation. Select when cost sensitivity outweighs need for maximum 300 MHz performance; drop-in replacement with no layout change.
AS7C3256B-20JIN 512K × 36 QDR SRAM, 200 MHz, 3.3 V core, different pinout and protocol (separate read/write ports). Higher density per package but incompatible interface; requires redesign of controller logic and PCB routing. Consider only if migrating to QDR architecture for true simultaneous read/write; not a functional substitute for DDR-II burst timing.

Compared with CY7C1318BV18-250BZC, the -278BZC delivers 20% higher bandwidth and tighter DLL jitter specs critical for 10 GbE systems; versus AS7C3256B-20JIN, it offers lower voltage, superior burst efficiency, and native DDR-II timing-but lacks QDR's concurrent access capability.

Availability

CY7C1318BV18-278BZC is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, baseband processing caches, and industrial real-time controllers requiring stable component supply with long-term lifecycle assurance.

Supply support for CY7C1318BV18-278BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and mixed-signal ICs for communications, industrial, and automotive applications, with headquarters in San Jose, CA.

The CY7C13xxBV18 family targets high-speed networking and telecom infrastructure, delivering DDR-II SRAMs optimized for deterministic latency, signal integrity, and thermal efficiency in dense, fanless line card environments.

FAQ

What is the function of the ZQ pin on CY7C1318BV18-278BZC?

The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output driver impedance of DQ[17:0], CQ, and CQ pins to 48 Ω (0.2 × RQ). This ensures consistent signal integrity across voltage and temperature variations. It must never be left floating or tied directly to GND or VDDQ.

Can CY7C1318BV18-278BZC operate in single-clock mode?

Yes-when only K and K are supplied and C/C are unconnected, the device uses K/K to clock both input latching and output data. In this mode, CQ/CQ are generated relative to K/K, maintaining source-synchronous timing without requiring separate output clocks.

How does the burst counter work in CY7C1318BV18-278BZC?

The burst counter uses A0 as its LSB and increments linearly across two consecutive 18-bit words per access. Unlike x8/x9 variants, it does not start at zero internally-A0 determines whether the burst begins at even or odd word boundaries, enabling flexible address mapping in 1M × 18 space.

Is the DOFF pin required for normal operation?

No-DOFF is optional. When left unconnected or pulled HIGH, the internal DLL remains active for optimal data-to-CQ timing alignment. Pulling DOFF LOW disables the DLL, reverting to fixed-delay output timing with increased jitter; this mode is only recommended for debug or specific legacy timing compliance.

CY7C1318BV18-278BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
278 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1318BV18-278BZC FAQ

1.How can I place an order for CY7C1318BV18-278BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1318BV18-278BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1318BV18-278BZC reliable?

The price and inventory of CY7C1318BV18-278BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1318BV18-278BZC is usually 5 days.

3.What payment methods are accepted for CY7C1318BV18-278BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1318BV18-278BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1318BV18-278BZC?

CY7C1318BV18-278BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1318BV18-278BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1318BV18-278BZC?

For technical support, including CY7C1318BV18-278BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1318BV18-278BZC requirements.

6.How does Aetrix verify that CY7C1318BV18-278BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1318BV18-278BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1318BV18-278BZC meets industry standards.

7.What is the process for return or replacement of CY7C1318BV18-278BZC?

All CY7C1318BV18-278BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1318BV18-278BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1318BV18-278BZC part is unused and in its original packaging.

Return procedure for CY7C1318BV18-278BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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