Infineon Technologies CY7C1318JV18-300BZC

Overview

CY7C1318JV18-300BZC from Cypress Semiconductor is a 18 Mbit (1M × 18) synchronous DDR II SRAM with two-word burst architecture, 300 MHz clock operation, 1.5-cycle read latency (DLL enabled), and HSTL I/O interface. It delivers 600 MT/s data throughput via double-data-rate transfers synchronized to K/K and C/C clocks, and is used in high-bandwidth packet buffering for network switches and telecom line cards.

For engineers reviewing the CY7C1318JV18-300BZC datasheet, CY7C1318JV18-300BZC pinout, CY7C1318JV18-300BZC application, or CY7C1318JV18-300BZC equivalent, key selection criteria include DDR II timing compliance, echo clock (CQ/CQ) support for system-level data capture, 1.8V core supply with VDDQ-referenced HSTL outputs, and FBGA-165 package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternating rising edges of K/K and outputting two sequential 18-bit words per access. All synchronous inputs-including R/W, LD, BWS[1:0], and DQ[17:0]-are registered on K/K edges, while read data is edge-aligned to C/C (or K/K in single-clock mode).

The device integrates a Delay Lock Loop (DLL) enabling precise 1.5-cycle read latency at 300 MHz; when DOFF is asserted low, it reverts to DDR I behavior with 1-cycle latency up to 167 MHz. Echo clocks CQ/CQ are free-running, phase-synchronized to C/C, and eliminate board-level flight-time skew for multi-device data capture.

Key Specifications

Pinout & Package

Package: 165-ball FBGA (13 × 15 × 1.4 mm), ball pitch 0.8 mm, thermal pad exposed on underside. Pin functions validated per Cypress Document 001-15271 Rev. *E.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IS61WV102418BLL-15BLI and R1EX24012AS0C#U0, the CY7C1318JV18-300BZC uniquely combines 300 MHz DDR II operation, DLL-tuned 1.5-cycle latency, and CQ/CQ echo clocks-enabling robust, scalable memory subsystems in next-generation networking and test equipment without custom timing compensation.

Availability

CY7C1318JV18-300BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and industrial protocol gateway cache requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1318JV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The CY7C1318JV18 belongs to Cypress's DDR II synchronous SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where echo clock synchronization and sub-2-cycle latency are critical.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW, forcing the device into DDR I mode with 1-cycle read latency and maximum 167 MHz operation. When HIGH (via 10 kΩ pull-up), DLL is active, enabling 300 MHz operation and 1.5-cycle latency. Timing parameters differ significantly between modes-DLL-off timing is documented separately in the datasheet's "DDR I Mode" section.

Can CY7C1318JV18-300BZC operate with only K/K clocks, without C/C?

Yes. In single-clock mode, C and C pins are tied to K and K respectively, and all output timing references shift to K/K edges. The device retains full functionality-including burst reads, byte writes, and echo clock generation-but loses flight-time deskewing capability. CQ/CQ remain active and phase-locked to K/K in this configuration.

How is output impedance calibrated using the ZQ pin?

ZQ must be connected to a 240 Ω resistor to ground. During power-up or ZQ calibration command, the device measures this reference and configures its DQ and CQ output drivers to 48 Ω (0.2 × 240 Ω). Direct connection to VDDQ enables minimum impedance (~30 Ω); connection to GND or floating is prohibited and may damage the device.

What is the role of the LD (Load) signal in burst operation?

LD is a synchronous active-LOW strobe that latches the current address and R/W state on the rising edge of K, initiating a two-word burst transaction. It defines the start of each bus cycle and must be held stable for one K cycle. Unlike asynchronous CE, LD enables precise pipeline control and eliminates address setup uncertainty in high-frequency operation.