Infineon Technologies CY7C1318JV18-300BZXC

Overview

CY7C1318JV18-300BZXC from Cypress Semiconductor is a 18 Mbit (1M × 18) synchronous pipelined DDR II SRAM with two-word burst architecture, 300 MHz input clock, 600 MHz effective data rate, and 1.5-cycle read latency when DLL is enabled. It operates on a 1.8V core supply with HSTL I/O, supports echo clocks (CQ/CQ) for precise data capture, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-speed networking buffer applications.

For engineers reviewing the CY7C1318JV18-300BZXC datasheet, CY7C1318JV18-300BZXC pinout, CY7C1318JV18-300BZXC application, or CY7C1318JV18-300BZXC equivalent, key selection criteria include DDR II timing compliance, dual-clock domain support (K/K and C/C), DLL-enabled 1.5-cycle latency mode, HSTL-18 I/O drive capability, and FBGA thermal/mechanical suitability for multi-chip memory subsystems.

Technical Context

The CY7C1318JV18-300BZXC implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternating rising edges of K/K to enable two-word sequential reads/writes. All synchronous inputs-including R/W, LD, BWS[1:0], and DQ[17:0]-are registered on K/K edges, while output data is edge-aligned to C/C (or K/K in single-clock mode).

It integrates a Delay Lock Loop (DLL) for sub-cycle data placement accuracy and supports echo clocks CQ/CQ referenced to C/C to eliminate board-level flight-time skew. In DLL-off mode (DOFF = LOW), it reverts to DDR I behavior with 1-cycle latency and ≤167 MHz operation, enabling backward compatibility with legacy controllers.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with IS61WV102418BLL-10BLI and MT47H128M16RT-25E:H, the CY7C1318JV18-300BZXC delivers deterministic 1.5-cycle latency and echo-clock–assisted data capture-critical for deterministic real-time systems-while avoiding SDRAM refresh overhead and asynchronous SRAM's bandwidth ceiling at 150 MHz.

Availability

CY7C1318JV18-300BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfaces, baseband digital front-ends, and industrial real-time controllers requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1318JV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets.

The CY7C1318JV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in packet-processing and real-time control systems where DDR SDRAM unpredictability or asynchronous SRAM bandwidth limits are unacceptable.

FAQ

What is the minimum setup/hold time requirement for LD relative to K?

The LD signal must meet a 0.3 ns setup time and 0.2 ns hold time relative to the rising edge of K, as specified in the "AC Switching Characteristics" table (Page 21, Rev. *E). These values are guaranteed across 0°C–70°C and 1.71V–1.89V VDD/VDDQ, and are enforced by internal input registers clocked on K/K edges.

Can C and C be omitted in system design?

Yes - C and C may be omitted if the system uses single-clock mode. In that case, output data is timed to K and K, and CQ/CQ are generated relative to K/K. However, removing C/C forfeits flight-time deskewing capability and increases timing margin risk in multi-device configurations above 200 MHz.

How does ZQ calibration affect signal integrity?

ZQ calibration adjusts DQ and CQ output driver impedance to match the PCB's 50 Ω data bus, reducing reflection-induced jitter by up to 40 ps peak-to-peak. When ZQ is tied to VDDQ, drivers default to minimum impedance (~25 Ω), which may cause overshoot on unterminated stubs but improves rise/fall times in point-to-point layouts.

Is the CY7C1318JV18-300BZXC compatible with DDR I controllers?

Only in DLL-off mode (DOFF = LOW), where it behaves as a DDR I device with 1-cycle latency and maximum 167 MHz operation. Full 300 MHz DDR II functionality requires a controller supporting echo clocks, DLL-enabling sequences, and two-word burst addressing - not provided by standard DDR I PHYs.