Infineon Technologies CY7C1318KV18-250BZC

Overview

CY7C1318KV18-250BZC from Cypress Semiconductor is a 18-Mbit (1M × 18) DDR II synchronous SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V/1.8 V VDDQ. It delivers 900 MB/s peak bandwidth via double-data-rate transfers at 500 Mbps per pin and supports precise timing control using dual input clocks (K/K) and echo clocks (CQ/CQ). Used in high-speed networking buffers and packet processing ASIC interfaces.

For engineers reviewing the CY7C1318KV18-250BZC datasheet, CY7C1318KV18-250BZC pinout, CY7C1318KV18-250BZC application, or CY7C1318KV18-250BZC equivalent, key selection criteria include read latency configuration (1-cycle vs. 1.5-cycle via DOFF), burst-addressing behavior, HSTL drive strength programmability, and FBGA-165 package thermal/mechanical constraints for multi-SRAM memory subsystems.

Technical Context

The device implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternating rising edges of K and K. Read data is registered and driven synchronously on C/C (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to output data for simplified capture at the controller.

It features on-chip PLL for accurate data placement, JTAG 1149.1 test access port, and programmable output impedance via ZQ pin (0.2 × RQ calibration resistor to ground). Write operations use self-timed internal logic, while byte write select (BWS0/BWS1) enables granular 9-bit writes without disturbing adjacent bytes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IS61WV102418BLL-250BLI and MT45W16MW16BG-250:J, CY7C1318KV18-250BZC uniquely delivers true synchronous SRAM determinism, HSTL-compatible DDR-II signaling with echo clocks, and programmable impedance-critical for jitter-sensitive, multi-device memory subsystems.

Availability

CY7C1318KV18-250BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, baseband processing caches, and industrial real-time controller buffers requiring stable component supply, long-lifecycle availability, and Pb-free compliance.

Supply support for CY7C1318KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications, with focus on signal integrity, timing precision, and system-level integration.

CY7C1318KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-latency memory subsystems in networking, wireless infrastructure, and real-time control where asynchronous DRAM latency and refresh overhead are unacceptable.

FAQ

What is the function of the DOFF pin on CY7C1318KV18-250BZC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle DDR-II latency for improved timing margin in high-frequency systems; when LOW, it reverts to 1-cycle DDR-I latency for legacy compatibility. This setting is sampled synchronously on the K clock edge and affects all subsequent read operations until changed.

Can CY7C1318KV18-250BZC operate with only K clock (no K) in single-clock mode?

Yes - the device supports single-clock mode where K is tied HIGH and K is used as the sole input clock. In this mode, all synchronous inputs (address, R/W, BWS) are latched on K rising edges, and read data is driven on K/K edges. C/C clocks remain optional but recommended for optimal timing control; CQ/CQ still track K in this configuration.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external resistor (typically 240 Ω) to ground, enabling on-die calibration of DQ, CQ, and CQ output driver impedance to precisely 0.2 × RQ (e.g., 48 Ω). This matches standard HSTL-18 bus impedance, minimizing reflections and ensuring clean eye diagrams at 500 Mbps per pin - critical for reliable operation above 200 MHz.

Is CY7C1318KV18-250BZC pin-compatible with other speeds in the same family?

No - CY7C1318KV18-250BZC (250 MHz) shares identical pinout and package with -300BZC and -333BZC variants, but timing parameters (setup/hold, access time) differ. Interchangeability requires full timing validation in the target system; substituting a slower speed grade may cause setup violations, while faster grades require controller support for tighter margins.