Infineon Technologies CY7C1318KV18-250BZCT

Overview

CY7C1318KV18-250BZCT from Cypress Semiconductor is a 18-Mbit (1M × 18) DDR II synchronous SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V/1.8 V VDDQ. It delivers 900 MB/s peak bandwidth via double-data-rate transfers at 500 Mbps per pin and supports precise timing using dual input clocks (K/K) and echo clocks (CQ/CQ). Used in high-speed networking line cards for packet buffering.

For engineers reviewing the CY7C1318KV18-250BZCT datasheet, CY7C1318KV18-250BZCT pinout, CY7C1318KV18-250BZCT application, or CY7C1318KV18-250BZCT equivalent, key selection criteria include DDR-II burst latency mode (DOFF-controlled), 165-ball FBGA package mechanical compatibility, HSTL output drive programmability, and JTAG 1149.1 test access support.

Technical Context

The device implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K and K. Read data is registered and driven on rising edges of C and C (or K and K in single-clock mode), enabling deterministic 1.5-cycle read latency when DOFF = HIGH or 1-cycle latency when DOFF = LOW.

It integrates a PLL for accurate data placement, echo clocks (CQ/CQ) synchronized to C/C for simplified system-level data capture, and ZQ-calibrated output impedance matching. All synchronous inputs pass through edge-triggered registers; writes use on-chip self-timed control logic with byte-write select (BWS0/BWS1) for partial-word updates.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C3318A-250BIN and IS45S18180J-25BLI, CY7C1318KV18-250BZCT uniquely provides true DDR-II timing with echo clocks, programmable impedance, and selectable latency - essential for new designs targeting >200 MHz burst throughput and multi-SRAM synchronization.

Availability

CY7C1318KV18-250BZCT is available at Aetrix Electronics and suitable for telecom infrastructure, automated test equipment, industrial PLCs, and avionics subsystems requiring stable component supply and long-term manufacturing continuity.

Supply support for CY7C1318KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1318KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-latency burst buffering in high-speed serial data systems where timing precision and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1318KV18-250BZCT?

The DOFF (DDR Off) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency; when LOW, it reverts to DDR-I mode with 1-cycle latency. This allows backward compatibility with existing DDR-I controllers while supporting higher bandwidth in optimized systems. DOFF is sampled synchronously on the rising edge of K.

Can CY7C1318KV18-250BZCT operate with only one clock signal (K) instead of K/K pair?

Yes - the device supports single-clock mode where K serves as both positive and negative clock reference. In this mode, C and C must be tied together and driven by K, and CQ/CQ derive from K. However, dual-clock operation is required to achieve full DDR-II timing benefits including deskew and minimized flight-time mismatch across multi-device systems.

How does ZQ calibration affect signal integrity in high-speed designs?

ZQ calibration adjusts the output driver impedance of DQ and CQ pins to match the characteristic impedance of the PCB trace (typically 50 Ω). By connecting an external 240 Ω resistor from ZQ to ground, the device sets output strength to 0.2 × RQ = 48 Ω, minimizing reflections and improving eye diagram margins at 500 Mbps per pin.

Is CY7C1318KV18-250BZCT pin-compatible with other devices in the CY7C13xxKV18 family?

No - CY7C1318KV18-250BZCT (1M × 18) uses a distinct 165-ball FBGA pinout optimized for its 18-bit data width and BWS0/BWS1 byte-select mapping. CY7C1320KV18 (512K × 36) has different address count, BWS[3:0] signals, and DQ[35:0] layout, making them mechanically and electrically incompatible despite shared architecture.