Infineon Technologies CY7C1318KV18-250BZI
- Part No.:
- CY7C1318KV18-250BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1318KV18-250BZI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1318KV18 from Cypress Semiconductor is a 18-Mbit (1M × 18) DDR II synchronous SRAM with two-word burst architecture, 333-MHz clock support, 1.8 V core supply, and HSTL I/O compatible with 1.5 V/1.8 V VDDQ. It delivers 666 MHz effective data rate via double-data-rate transfers synchronized to K/K and C/C clocks, and is used in high-bandwidth networking buffers and packet-processing ASIC/FPGA interfaces.
For engineers reviewing the CY7C1318KV18 datasheet, CY7C1318KV18 pinout, CY7C1318KV18 application, or CY7C1318KV18 equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), echo clock–assisted data capture (CQ/CQ), programmable output impedance via ZQ, and FBGA-165 package compatibility with high-density PCB layouts.
Technical Context
The device implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K and K. Read data is registered and driven on rising edges of C and C (or K and K in single-clock mode), enabling precise timing alignment across multi-device memory subsystems.
It integrates a PLL for accurate data placement, JTAG 1149.1 test access, and variable-drive HSTL output buffers supporting 1.4 V–VDDQ swing. The DOFF pin selects between DDR-II mode (1.5-cycle read latency) and DDR-I–compatible mode (1-cycle latency), allowing system-level timing flexibility without hardware change.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 18 Mbit (1M × 18 configuration) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s effective bandwidth via DDR |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable real-time timing mode |
| Core Supply | 1.8 V ± 0.1 V - low-power operation with tight voltage tolerance |
| I/O Voltage Range | 1.4 V to VDDQ (1.5 V or 1.8 V) - supports mixed-voltage system interfacing |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - high-pin-count, thermally optimized for dense routing |
| Output Drive | Programmable HSTL - impedance matched via external ZQ resistor to minimize signal integrity issues |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | 18-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo-clock alignment |
| K / K | Positive/negative input clocks | Used for address/control/data input registration; defines DDR timing reference for all synchronous inputs |
| C / C | Positive/negative output data clocks | Drive read data; enable board-level deskewing across multiple SRAMs in parallel configurations |
| CQ / CQ | Echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C - simplify FPGA/ASIC data capture without additional delay compensation logic |
| DOFF | DDR mode control input | Configures read latency: HIGH → DDR-II (1.5-cycle), LOW → DDR-I (1-cycle); no external reconfiguration needed |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to set DQ/CQ output drive strength to 0.2 × RQ; prevents signal overshoot/ringing |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces external address bus toggling frequency by 50% versus single-word access - lowers EMI and routing complexity |
| Integrated PLL | Ensures sub-cycle data placement accuracy at 333 MHz - eliminates need for external clock cleanup circuitry |
| JTAG 1149.1 compliance | Enables boundary-scan testing and in-system diagnostics without dedicated test pads or probe points |
| Variable-drive HSTL outputs | Supports 1.5 V or 1.8 V VDDQ rails and adapts drive strength to trace impedance - improves signal integrity across varied PCB stackups |
| Synchronous self-timed writes | On-chip write timing control eliminates external write-strobe generation - simplifies controller interface logic |
Applications
| Networking Packet Buffer | FPGA Co-Processor Cache |
|---|---|
|
Use Scenario: High-speed line-card buffer storing ingress/egress Ethernet frames before classification and forwarding. IC Role / Device Role / Timing Role: DDR-II SRAM acting as dual-port-accessible, low-latency frame staging buffer synchronized to network processor clock domain. Use Value: 666 MT/s bandwidth and echo-clock–aligned reads reduce FIFO depth requirements and eliminate inter-chip skew compensation logic. |
Use Scenario: Off-chip cache for FPGA-based digital signal processing engines performing real-time video encoding. IC Role / Device Role / Timing Role: Burst-mode SRAM providing deterministic 1.5-cycle read latency to feed pipeline stages with pixel blocks. Use Value: DOFF-selectable latency allows tuning to match FPGA register-to-register timing margins without changing PCB layout. |
| Telecom Baseband Memory | Test Equipment Pattern Memory |
|
Use Scenario: Shared memory between DSP cores and RF front-end controllers in 4G/LTE base stations. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM interfacing via HSTL to multi-core SoC with strict setup/hold timing constraints. Use Value: 1.8 V core + 1.5 V I/O operation reduces power vs. 3.3 V QDR alternatives while maintaining signal integrity at 333 MHz. |
Use Scenario: High-fidelity stimulus/response storage in automated test equipment generating and capturing multi-Gbps serial patterns. IC Role / Device Role / Timing Role: Burst-access memory delivering deterministic two-word sequences to pattern generator state machines. Use Value: CQ/CQ echo clocks allow tester ASIC to latch valid data without per-pin delay tuning - cuts test development time by ~30%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3318B-250BIN | Single-ended clock interface (no K/K or C/C pairs); 250 MHz max clock; no echo clocks or ZQ calibration | Lacks DDR-II timing precision and board-level deskew capability - suitable only for lower-speed, cost-sensitive systems | Select when system clock <200 MHz and echo-clock–based capture is not required |
| IS45S18180J-25BLI | 1.8 V DDR2 SDRAM (not SRAM); 133 MHz clock → 266 MT/s; requires refresh and command decoding logic | Higher density but introduces latency variability and controller overhead - unsuitable for deterministic real-time buffering | Choose only if >18 Mbit capacity is mandatory and latency jitter is acceptable |
Compared with AS7C3318B-250BIN and IS45S18180J-25BLI, CY7C1318KV18 uniquely combines true SRAM determinism, DDR-II bandwidth, echo-clock–assisted capture, and programmable impedance - making it optimal for latency-critical, high-speed embedded buffering where timing predictability is non-negotiable.
Availability
CY7C1318KV18 is available at Aetrix Electronics and suitable for networking packet buffers, FPGA co-processor caches, and telecom baseband memory requiring stable component supply, long-lifecycle support, and Pb-free compliance.
Supply support for CY7C1318KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets, with emphasis on signal integrity and timing-critical applications.
CY7C1318KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in FPGA- and ASIC-based systems where DDR SDRAM unpredictability is unacceptable.
FAQ
What is the function of the DOFF pin on CY7C1318KV18?
The DOFF pin selects the device's read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle read latency; when LOW, it reverts to DDR-I–compatible 1-cycle latency. This is a static configuration pin-no dynamic switching during operation-and directly affects timing budget allocation in the memory controller.
Can CY7C1318KV18 operate without external C and C clocks?
Yes-it supports single-clock mode using only K and K for both input registration and output driving. In this mode, C and C are unused, and CQ/CQ are generated relative to K/K. However, echo-clock–assisted data capture and board-level deskew benefits are forfeited, limiting maximum reliable operating frequency in multi-device systems.
How is output impedance calibrated using the ZQ pin?
ZQ connects to an external precision resistor (RQ) tied to ground; the device measures RQ and sets DQ/CQ output driver strength to 0.2 × RQ. This calibrates termination to match PCB trace impedance (typically 50 Ω), minimizing reflections. ZQ must never be left floating or tied to GND-connecting to VDDQ enables minimum-impedance mode.
Is CY7C1318KV18 pin-compatible with CY7C1320KV18?
No-they share the same 165-ball FBGA footprint but differ electrically and functionally: CY7C1318KV18 is 1M × 18 (18-bit data bus), while CY7C1320KV18 is 512K × 36 (36-bit bus) with four BWS inputs and different address count (20 vs. 19). Pin functions like DQ[35:0] vs. DQ[17:0] and BWS[3:0] vs. BWS[1:0] are incompatible; PCB redesign is required for substitution.
CY7C1318KV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1318KV18-250BZI FAQ
1.How can I place an order for CY7C1318KV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1318KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C1318KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1318KV18-250BZI is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C1318KV18-250BZI?
For technical support, including CY7C1318KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1318KV18-250BZI requirements.
6.How does Aetrix verify that CY7C1318KV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1318KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1318KV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1318KV18-250BZI?
All CY7C1318KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1318KV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1318KV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1318KV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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