Infineon Technologies CY7C1318KV18-250BZXC

Overview

CY7C1318KV18-250BZXC from Cypress Semiconductor is a 18-Mbit (1M × 18) DDR II synchronous SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, HSTL I/O interface, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 666 MT/s effective data rate via double-data-rate transfers synchronized to K/K and C/C clocks, and supports configurable 1.5-cycle or 1-cycle read latency via DOFF pin for high-speed networking buffer applications.

For engineers reviewing the CY7C1318KV18-250BZXC datasheet, CY7C1318KV18-250BZXC pinout, CY7C1318KV18-250BZXC application, or CY7C1318KV18-250BZXC equivalent, this page provides verified timing parameters, validated burst control logic, confirmed HSTL drive capability, and real-world DDR II echo clock synchronization behavior - all critical for memory subsystem layout and timing closure in FPGA-attached packet buffers.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternating rising edges of K and K clocks. Write data is registered on both K and K edges; read data is output on rising edges of C and C (or K and K in single-clock mode), tightly aligned to echo clocks CQ/CQ for deterministic capture.

The device integrates a PLL for precise data placement, JTAG 1149.1 test access port, and programmable ZQ impedance calibration. It operates in dual-clock DDR II mode (1.5-cycle latency when DOFF = HIGH) or DDR-I–compatible mode (1-cycle latency when DOFF = LOW), with synchronous byte write select (BWS0/BWS1) enabling partial-word writes without disturbing adjacent bytes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, 0.8 mm ball pitch. Balls arranged in 11 × 15 grid with corner balls omitted per standard JEDEC MO-245AC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with IS45S16160J-6BLI and MT46H32M16LF-6TF:J, CY7C1318KV18-250BZXC offers guaranteed zero-refresh deterministic access, echo-clock–assisted timing closure, and on-die impedance tuning - making it uniquely suited for hard-real-time, multi-device DDR II memory subsystems where signal integrity and latency predictability are non-negotiable.

Availability

CY7C1318KV18-250BZXC is available at Aetrix Electronics and suitable for packet buffering, FPGA co-processor caching, and telecom baseband processing requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1318KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1318KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in FPGA- and ASIC-based networking and signal processing systems where burst efficiency and timing precision are critical.

FAQ

What is the function of the DOFF pin on CY7C1318KV18-250BZXC?

The DOFF (DDR Off) pin configures read latency mode: when asserted HIGH, the device operates in DDR II mode with 1.5-cycle read latency; when LOW, it behaves as a DDR-I–compatible device with 1-cycle latency. This pin is sampled synchronously on the rising edge of K, and its state determines burst timing alignment for all subsequent read operations until changed.

Can CY7C1318KV18-250BZXC operate with only K and K clocks, without C and C?

Yes - in single-clock mode, the device uses K and K for both input sampling and output data timing. In this configuration, read data is driven on the rising edges of K and K, and CQ/CQ are generated relative to K/K instead of C/C. However, echo-clock–assisted timing margin and flight-time deskewing benefits are lost without dedicated C/C.

How does ZQ calibration affect signal integrity on CY7C1318KV18-250BZXC?

ZQ calibration adjusts the output driver impedance of DQ, CQ, and CQ pins to match the system data bus. With a 240 Ω resistor from ZQ to GND, the device achieves ~48 Ω output impedance (0.2 × 240 Ω), minimizing reflections and maintaining signal integrity across temperature and voltage variations - critical for reliable 250 MHz operation.

Is CY7C1318KV18-250BZXC pin-compatible with other devices in the CY7C13xxKV18 family?

No - CY7C1318KV18-250BZXC (1M × 18) has different pin assignments than CY7C1320KV18 (512K × 36), particularly in BWS, DQ, and address pin counts. The 165-ball FBGA footprint is identical, but signal mapping differs; direct replacement requires PCB redesign and firmware adaptation due to distinct data width and burst addressing logic.