Infineon Technologies CY7C1318KV18-250BZXI

Overview

CY7C1318KV18-250BZXI from Cypress Semiconductor is a 18-Mbit (1M × 18) DDR II synchronous SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V/1.8 V VDDQ. It delivers 900 MB/s peak bandwidth via double-data-rate transfers at 500 Mbps per pin and supports precise timing via dual input clocks (K/K) and echo clocks (CQ/CQ). Used in high-speed packet buffering for telecom line cards and network switches.

For engineers reviewing the CY7C1318KV18-250BZXI datasheet, CY7C1318KV18-250BZXI pinout, CY7C1318KV18-250BZXI application, or CY7C1318KV18-250BZXI equivalent, key selection criteria include DDR-II read latency (1.5 cycles with DOFF HIGH), 165-ball FBGA package compatibility, HSTL output drive programmability, and JTAG 1149.1 test access support for system-level validation.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K and K clocks. Write data is registered on both K and K edges, while read data is driven synchronously to C/C (or K/K in single-clock mode), enabling deterministic timing closure in multi-device DDR topologies.

The device integrates a PLL for accurate data placement, supports programmable output impedance via ZQ calibration, and provides independent byte write control (BWS0/BWS1) for selective 9-bit word updates. Echo clocks CQ/CQ are phase-aligned to C/C and referenced to output data, eliminating board-level capture skew in high-speed memory interfaces.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C3256A-25TIN and IS61WV102418BLL-25BLI, CY7C1318KV18-250BZXI delivers 2.25× higher bandwidth and deterministic DDR-II timing via echo clocks and PLL-critical for telecom and packet-processing systems where jitter and skew directly impact throughput and BER.

Availability

CY7C1318KV18-250BZXI is available at Aetrix Electronics and suitable for telecom infrastructure, network switching, wireless baseband processing, and industrial real-time data acquisition requiring stable component supply across extended product lifecycles.

Supply support for CY7C1318KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets, with emphasis on signal integrity and system-level timing robustness.

CY7C1318KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic, low-jitter packet buffering in high-speed serial data infrastructure where echo-clock–based data capture and programmable impedance are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1318KV18-250BZXI?

The DOFF pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle read latency; when LOW, it reverts to DDR-I timing with 1-cycle latency. This allows system designers to match the SRAM's timing behavior to the host controller's capabilities without hardware changes.

How does ZQ calibration affect output signal integrity?

ZQ calibration adjusts the output driver impedance of DQ and CQ pins to match the system's data bus characteristic impedance (typically 50 Ω). By connecting a 240 Ω resistor from ZQ to ground, the device sets output strength to 0.2 × RQ, minimizing reflections and ensuring clean eye diagrams at 500 Mbps.

Can CY7C1318KV18-250BZXI operate without C and C clocks?

Yes - when C and C are not provided, the device operates in single-clock mode using K and K for both input sampling and output data timing. In this mode, CQ and CQ are generated relative to K/K, preserving echo-clock functionality but with reduced deskew flexibility compared to dual-clock operation.

Is JTAG boundary scan supported on CY7C1318KV18-250BZXI?

Yes - the device implements IEEE 1149.1 JTAG test access port with TDI, TDO, TCK, and TMS pins. It supports instruction register loading, boundary scan register access, and identification register readout, enabling full interconnect testing without functional access to the SRAM array.