Infineon Technologies CY7C1318KV18-300BZXC

Overview

CY7C1318KV18-300BZXC from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous DDR II SRAM with two-word burst architecture, 300 MHz clock operation, 1.8 V core supply, and HSTL I/O compatible with 1.5 V/1.8 V VDDQ. It delivers 600 MB/s peak bandwidth via double-data-rate transfers and supports precise timing control using dual input clocks (K/K) and echo clocks (CQ/CQ). Used in high-speed networking buffers and packet processing ASIC interfaces.

For engineers reviewing the CY7C1318KV18-300BZXC datasheet, CY7C1318KV18-300BZXC pinout, CY7C1318KV18-300BZXC application, or CY7C1318KV18-300BZXC equivalent, key selection criteria include DDR-II burst latency mode (DOFF-controlled), 165-ball FBGA package compatibility, HSTL drive strength configurability, and JTAG 1149.1 test access support for system-level validation.

Technical Context

This SRAM implements a pipelined synchronous architecture with internal burst counter driven by A0, latching addresses on alternating rising edges of K and K clocks. Write data is registered on both K and K edges; read data is output synchronized to C/C (or K/K in single-clock mode), enabling deterministic timing alignment across multi-device memory subsystems.

The device integrates a PLL for accurate data placement, supports programmable output impedance via ZQ calibration, and provides selectable 1-cycle (DOFF = LOW) or 1.5-cycle (DOFF = HIGH) read latency. All synchronous inputs pass through edge-triggered registers, and outputs are registered to minimize skew between DQ and echo clocks CQ/CQ.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C1318KV18-300BZXC uniquely delivers DDR-II burst bandwidth, echo-clock–assisted data capture, and on-die impedance tuning - essential for scalable, high-frequency memory subsystems where timing margin and signal integrity are design-critical.

Availability

CY7C1318KV18-300BZXC is available at Aetrix Electronics and suitable for telecom line card buffering, high-speed packet switch fabric, test equipment pattern memory, and industrial real-time controller cache requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1318KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems, with emphasis on signal integrity, timing precision, and industrial reliability.

CY7C1318KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for applications needing deterministic burst-access latency, scalable bandwidth via DDR signaling, and robust system-level timing control in multi-device memory channels.

FAQ

What is the function of the DOFF pin on CY7C1318KV18-300BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted LOW, the device operates in DDR-I mode with 1-cycle read latency; when HIGH, it enables DDR-II mode with 1.5-cycle latency. This setting directly controls internal pipeline staging and must be stable before initialization completes. It does not affect write timing or burst length.

Can CY7C1318KV18-300BZXC operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both address/control and output data clocks. In this configuration, C and C are unused, and CQ/CQ are generated relative to K/K. However, echo-clock–assisted data capture and flight-time deskewing are unavailable, reducing timing margin in multi-SRAM systems.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (RQ) tied to ground; the device measures RQ and configures its DQ and CQ output drivers to 0.2 × RQ. Typical RQ = 240 Ω yields 48 Ω drive strength. If ZQ is tied to VDDQ, minimum impedance (~24 Ω) is enabled. ZQ must never float or connect to GND, as that disables calibration and risks signal integrity failure.

Is CY7C1318KV18-300BZXC pin-compatible with CY7C1320KV18-300BZXC?

No - although both use the same 165-ball FBGA package, pin assignments differ significantly. CY7C1320KV18-300BZXC has 36-bit data width (DQ[35:0]), four BWS inputs, and 19 address lines, requiring different PCB layout and controller interface logic. The devices share architectural concepts but are not drop-in replacements.