Infineon Technologies CY7C1320CV18-167BZC
- Part No.:
- CY7C1320CV18-167BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1320CV18-167BZC.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1320CV18-167BZC from Cypress Semiconductor is a 18-Mbit DDR II SRAM configured as 512K × 36, operating at 167 MHz with 1.8 V core supply and HSTL I/O. It implements 2-word burst addressing, synchronous self-timed writes, and dual echo clocks (CQ/CQ) for precise data capture in high-speed memory subsystems. Used in network packet buffers and baseband processing where deterministic latency and DDR timing integrity are critical.
For engineers reviewing the CY7C1320CV18-167BZC datasheet, CY7C1320CV18-167BZC pinout, CY7C1320CV18-167BZC application, or CY7C1320CV18-167BZC equivalent, key selection criteria include DDR II burst architecture, DLL-enabled 1.5-cycle read latency, 165-ball FPBGA package compatibility, and JTAG 1149.1 test access support for production validation.
Technical Context
This device is a synchronous pipelined SRAM with DDR II interface logic, using two independent input clocks (K/K) for address/data latching and two output clocks (C/C) for data strobing. The internal burst counter increments on A0 to deliver two consecutive 36-bit words per access, reducing external address bus toggling frequency by 50%.
It supports both DLL-on mode (1.5-cycle read latency at 167 MHz) and DLL-off mode (1-cycle latency, DDR I timing), with echo clocks CQ/CQ phase-aligned to C/C to eliminate board-level skew. All synchronous inputs pass through K/K-controlled registers; outputs are registered to C/C (or K/K in single-clock mode).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 organization) |
| Max Clock Frequency | 167 MHz (guaranteed operation with DDR I timing when DLL is disabled) |
| Data Rate | 334 MT/s (double-data-rate transfer at 167 MHz clock) |
| Supply Voltages | 1.8 V core (VDD), 1.8 V I/O (VDDQ), with VREF reference for HSTL compliance |
| Burst Length | 2-word fixed burst - reduces address bus switching and simplifies controller address generation |
| Read Latency | 1 cycle (DLL off), 1.5 cycles (DLL on) - enables predictable timing budgeting in real-time systems |
| Package | 165-ball FPBGA (13 × 15 × 1.4 mm), Pb-free compatible |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FPBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data | 36-bit DDR data bus; sampled on K/K rising edges during write, driven on C/C rising edges during read; tristated when deselected |
| K / K | Positive/negative input clocks | Rising edges latch all synchronous inputs (address, R/W, BWS); define burst initiation and write timing |
| C / C | Positive/negative output data clocks | Strobe read data; used with CQ/CQ to deskew flight time across multiple SRAMs in parallel memory channels |
| CQ / CQ | Echo clocks referenced to C/C | Free-running, phase-synchronized to C/C; enable source-synchronous data capture without separate system-level strobes |
| BWS[3:0] | Byte write select (active low) | Four independent 9-bit byte enables; allows partial-word writes without read-modify-write overhead |
| LD | Load control | Active-low signal defining start of bus cycle; synchronizes address and R/W sampling on next K/K edge |
| ZQ | Output impedance calibration | Connects to external resistor to ground to tune DQ/CQ output drive strength to match 50 Ω–75 Ω PCB trace impedance |
| DOFF | DLL disable control | Active-low pin; forces DDR I timing mode (1-cycle latency) and disables DLL for lower power or legacy compatibility |
Key Features
| Feature | Design Value |
|---|---|
| 2-word burst architecture | Halves effective address bus toggle rate versus non-burst SRAMs, easing controller timing closure |
| Dual echo clocks (CQ/CQ) | Eliminates need for system-level data strobes; enables reliable >300 MT/s capture with FPGA or ASIC receivers |
| Programmable output drive (ZQ) | Calibrates DQ/CQ output impedance to ±10% of target (e.g., 50 Ω), improving signal integrity on lossy backplanes |
| JTAG 1149.1 boundary scan | Enables in-circuit testability of solder joints and interconnects in dense BGA layouts without physical probe access |
| DLL On/Off mode selection | Runtime-selectable latency mode: 1.5-cycle (DLL on) for max bandwidth or 1-cycle (DLL off) for deterministic timing in safety-critical paths |
Applications
| Network Packet Buffer | Baseband Signal Processing |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-throughput, low-latency buffer interfacing directly with MAC controllers via DDR II bus. Use Value: 2-word burst and echo clocks ensure zero-wait-state frame buffering at line rate (1 Gbps+), minimizing jitter in time-sensitive forwarding. |
Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE femtocell baseband processors. IC Role / Device Role / Timing Role: Synchronous memory co-processor supporting burst-intensive DSP algorithms with deterministic read latency. Use Value: DLL-off mode provides 1-cycle read latency at 167 MHz, enabling tight loop timing for real-time OFDM symbol processing. |
| Industrial Motion Controller | Medical Imaging Data Pipeline |
|
Use Scenario: Holding interpolated trajectory points and servo feedback history in CNC motion controllers. IC Role / Device Role / Timing Role: Deterministic-access memory for closed-loop position update cycles requiring sub-microsecond latency predictability. Use Value: JTAG test access and HSTL I/O ensure robust operation in electrically noisy factory environments with EMI immunity up to 30 V/m. |
Use Scenario: Buffering raw sensor data from ultrasound transducer arrays prior to beamforming computation. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory stage between analog front-end and FPGA-based digital processing pipeline. Use Value: 165-ball FPBGA package enables compact, thermally efficient placement near FPGA I/O banks, reducing trace length and signal degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS45S32800J-167BLI | 32-Mbit (1M × 32), 167 MHz, single-ended SSTL-18 I/O, no echo clocks or DLL | Lacks CQ/CQ and DLL; requires external strobe generation and tighter layout control for timing closure | Choose when cost sensitivity outweighs need for source-synchronous simplicity and latency flexibility |
| MT46H32M32LF-6T:F | 1-Gbit DDR2 SDRAM, 32-bit bus, 333 MHz, 1.8 V, on-die termination, no burst-2 mode | Asynchronous refresh, higher density but longer latency; requires memory controller with DDR2 protocol stack | Prefer for large sequential buffers where refresh management is acceptable and bandwidth >500 MB/s is required |
Compared with IS45S32800J-167BLI and MT46H32M32LF-6T:F, CY7C1320CV18-167BZC uniquely delivers burst-2 DDR II with integrated echo clocks and selectable DLL mode-enabling simpler controller design, lower system-level timing margin risk, and deterministic latency in hard real-time embedded memory subsystems.
Availability
CY7C1320CV18-167BZC is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and industrial motion control requiring stable component supply, long-lifecycle support, and guaranteed Pb-free manufacturing compliance.
Supply support for CY7C1320CV18-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with emphasis on reliability and signal integrity.
This device belongs to Cypress's DDR II SRAM product line, engineered specifically for deterministic-latency, high-bandwidth memory interfaces in FPGA- and ASIC-based systems where DDR SDRAM complexity is undesirable.
FAQ
What is the function of the DOFF pin on CY7C1320CV18-167BZC?
The DOFF (DLL Off) pin is an active-low control that disables the internal delay lock loop. When pulled low, the device operates in DDR I timing mode with 1-cycle read latency and relaxed setup/hold requirements. This mode is validated for 167 MHz operation and simplifies timing closure in systems where absolute minimum latency is prioritized over maximum bandwidth.
Can CY7C1320CV18-167BZC operate with only K and K clocks, without C and C?
Yes. In single-clock mode, the device uses K and K for both input latching and output data strobing. Read data is driven on the rising edges of K and K instead of C and C, and echo clocks CQ/CQ are generated relative to K/K. This mode eliminates the need for dedicated output clocks but sacrifices deskew capability across multi-device memory channels.
How does ZQ pin calibration affect signal integrity?
ZQ connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die calibration of DQ and CQ output driver impedance. This achieves ±10% matching to the PCB trace characteristic impedance (e.g., 50 Ω), reducing reflections, overshoot, and timing uncertainty-critical for maintaining eye opening at 334 MT/s data rates.
Is CY7C1320CV18-167BZC pin-compatible with CY7C1318CV18-167BZC?
No. Although both use the same 165-ball FPBGA package, their pinouts differ significantly: CY7C1318CV18-167BZC has DQ[17:0], BWS[1:0], and 20 address lines (A[19:0]), while CY7C1320CV18-167BZC uses DQ[35:0], BWS[3:0], and 19 address lines (A[18:0]). Direct substitution requires PCB redesign and controller firmware updates.
CY7C1320CV18-167BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1320CV18-167BZC FAQ
1.How can I place an order for CY7C1320CV18-167BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1320CV18-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1320CV18-167BZC reliable?
The price and inventory of CY7C1320CV18-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1320CV18-167BZC is usually 5 days.
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Once your CY7C1320CV18-167BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1320CV18-167BZC?
For technical support, including CY7C1320CV18-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1320CV18-167BZC requirements.
6.How does Aetrix verify that CY7C1320CV18-167BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1320CV18-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1320CV18-167BZC meets industry standards.
7.What is the process for return or replacement of CY7C1320CV18-167BZC?
All CY7C1320CV18-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1320CV18-167BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1320CV18-167BZC part is unused and in its original packaging.
Return procedure for CY7C1320CV18-167BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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