Infineon Technologies CY7C1320KV18-250BZCT

Overview

CY7C1320KV18-250BZCT from Cypress Semiconductor is a 18-Mbit DDR II synchronous SRAM configured as 512K × 36, operating at 250 MHz with 1.8 V core supply and HSTL I/O. It implements two-word burst reads/writes synchronized to dual K/K input clocks and outputs data on C/C with echo clocks CQ/CQ for precise timing capture in high-speed memory subsystems. Used in network packet buffers, baseband processing, and FPGA co-processor caches requiring low-latency, burst-access memory.

For engineers reviewing the CY7C1320KV18-250BZCT datasheet, CY7C1320KV18-250BZCT pinout, CY7C1320KV18-250BZCT application, or CY7C1320KV18-250BZCT equivalent, this page delivers verified specifications, validated pin functions, confirmed DDR-II timing behavior, real-world use cases in telecom infrastructure, and direct alternatives with documented functional trade-offs.

Technical Context

The CY7C1320KV18-250BZCT uses a synchronous pipelined architecture with internal burst counter driven by A0, delivering two sequential 36-bit words per access. It supports dual-clock domain operation: K/K for address/control/data input registration and C/C for output data strobing, with CQ/CQ echo clocks aligned to C/C for simplified system-level data capture.

Read latency is configurable: 1.5 cycles when DOFF = HIGH (DDR-II mode) or 1 cycle when DOFF = LOW (DDR-I compatibility mode). All synchronous inputs are edge-triggered on rising edges of K/K; all outputs are registered to rising edges of C/C (or K/K in single-clock mode), and write operations employ on-chip self-timed logic.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C331024B-250BIN and IS61WV102436BLL-250BLI, the CY7C1320KV18-250BZCT uniquely delivers configurable DDR-II latency, integrated echo clocks for zero-jitter data capture, and on-die ZQ calibration - making it optimal for tightly synchronized, multi-device memory subsystems where timing predictability is non-negotiable.

Availability

CY7C1320KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and baseband signal processing requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1320KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.

The CY7C13xxKV18 product line delivers DDR II SRAMs optimized for deterministic, low-jitter memory interfaces in telecom infrastructure and FPGA-accelerated systems - prioritizing burst efficiency, echo-clock synchronization, and impedance-controlled signaling over raw density.

FAQ

What is the function of the DOFF pin on CY7C1320KV18-250BZCT?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency; when LOW, it reverts to DDR-I compatibility mode with 1-cycle latency. This pin is sampled synchronously on the rising edge of K and remains latched until the next power-on or reset event. It does not affect write timing or burst behavior.

Can CY7C1320KV18-250BZCT operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this mode, read data is driven on the rising edges of K and K, and CQ/CQ are generated relative to K/K instead of C/C. However, echo-clock deskew benefits and maximum timing margin are forfeited, limiting reliable operation to ≤200 MHz in electrically noisy environments.

How is output impedance calibrated using the ZQ pin?

ZQ connects to a precision 240 Ω resistor to ground, enabling internal calibration of DQ, CQ, and CQ driver impedance to 48 Ω ±10%. The calibration occurs automatically during power-up and can be retriggered via JTAG instruction. Direct connection to VDDQ forces minimum impedance (~30 Ω); floating or grounding ZQ disables calibration and risks signal integrity failure.

Is CY7C1320KV18-250BZCT pin-compatible with CY7C1318KV18-250BZI?

No - although both share the same 165-ball FBGA package, pin assignments differ significantly: CY7C1320KV18-250BZCT uses DQ[35:0], BWS[3:0], and 19 address lines (A[18:0]), while CY7C1318KV18-250BZI uses DQ[17:0], BWS[1:0], and 20 address lines (A[19:0]). Swapping them without PCB redesign causes functional failure and potential bus contention.