Infineon Technologies CY7C1320KV18-250BZI

Overview

CY7C1320KV18-250BZI from Cypress Semiconductor is a 18-Mbit synchronous DDR II SRAM configured as 512K × 36, operating at 250 MHz with 1.8 V core supply and HSTL I/O. It implements two-word burst reads/writes using dual input clocks (K/K) and dual output clocks (C/C), delivers data at 500 Mbps per pin via DDR interface, and supports programmable output impedance via ZQ pin for precise bus termination in high-speed memory subsystems.

For engineers reviewing the CY7C1320KV18-250BZI datasheet, CY7C1320KV18-250BZI pinout, CY7C1320KV18-250BZI application, or CY7C1320KV18-250BZI equivalent, key selection criteria include its 512K × 36 organization, 1.5-cycle read latency (DOFF = HIGH), echo clock support (CQ/CQ), JTAG 1149.1 test access, and 165-ball FBGA package compatibility with high-density routing constraints.

Technical Context

The device uses a pipelined synchronous architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K/K to enable two-word burst transfers. All synchronous inputs-including R/W, LD, BWS[3:0], and address-are registered on K's rising edge, while write data is captured on both K and K edges.

Read data is driven synchronously on C/C rising edges with tightly matched echo clocks (CQ/CQ) referenced to C/C, eliminating inter-device skew. The integrated PLL ensures accurate data placement, and DOFF pin selects between 1-cycle (DDR-I mode, DOFF = LOW) and 1.5-cycle (DDR-II mode, DOFF = HIGH) read latency-critical for timing closure in multi-SRAM systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C33256P-25TIN and IS61WV102432BLL-25BLI, CY7C1320KV18-250BZI uniquely balances DDR-II burst efficiency, echo-clock timing simplicity, and ZQ-driven signal integrity-making it optimal for cost-constrained, high-reliability embedded systems needing deterministic 500 Mbps/pin performance without QDR complexity.

Availability

CY7C1320KV18-250BZI is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, industrial motion controllers, and test equipment pattern memory requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1320KV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1320KV18 belongs to Cypress's DDR II SRAM product line, designed specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure and real-time embedded systems where burst efficiency and timing predictability are essential.

FAQ

What is the function of the DOFF pin on CY7C1320KV18-250BZI?

The DOFF (DDR Off) pin configures read latency mode: when asserted HIGH, the device operates in DDR-II mode with 1.5-cycle read latency; when LOW, it reverts to DDR-I mode with 1-cycle latency. This setting directly affects controller pipeline depth and must be fixed at power-up-no runtime switching is supported. The pin is sampled during initialization and locks the latency behavior for all subsequent accesses.

Can CY7C1320KV18-250BZI operate without external C and C clocks?

Yes-it supports single-clock domain operation using only K and K for both input sampling and output driving. In this mode, read data is clocked out on K/K edges instead of C/C, and echo clocks CQ/CQ are generated relative to K/K. However, this sacrifices the flight-time deskewing benefit of dedicated output clocks and may limit maximum achievable system timing margin at 250 MHz.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die calibration of output driver impedance to 0.2 × RQ (e.g., 48 Ω). This matches standard PCB trace impedances, minimizing reflections and ensuring clean eye diagrams at 500 Mbps per pin. Leaving ZQ unconnected or tying it to GND disables calibration and forces minimum-impedance mode, risking overshoot and timing violations.

Is CY7C1320KV18-250BZI pin-compatible with CY7C1318KV18-250BZI?

No-they share the same 165-ball FBGA footprint but differ electrically and functionally: CY7C1318KV18 is 1M × 18 (18-bit bus), uses BWS[1:0], and has 20 address lines (A[19:0]), while CY7C1320KV18 is 512K × 36 (36-bit bus), uses BWS[3:0], and requires only A[18:0]. Pin assignments for DQ, BWS, and address differ significantly; direct substitution would cause bus width mismatch and address decoding errors.