Infineon Technologies CY7C1320KV18-250BZXC
- Part No.:
- CY7C1320KV18-250BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1320KV18-250BZXC.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1320KV18-250BZXC from Cypress Semiconductor is a 18-Mbit DDR II synchronous SRAM configured as 512K × 36, operating at 250 MHz with 500 MT/s effective data rate via double-data-rate interface. It features two-word burst architecture, echo clocks (CQ/CQ), and programmable output impedance via ZQ pin. Designed for high-bandwidth buffering in network packet processors and telecom line cards.
For engineers reviewing the CY7C1320KV18-250BZXC datasheet, CY7C1320KV18-250BZXC pinout, CY7C1320KV18-250BZXC application, or CY7C1320KV18-250BZXC equivalent, key selection criteria include 250 MHz clock frequency, 512K × 36 organization, HSTL I/O compatibility, 1.8 V core supply, and FBGA-165 package mechanical constraints.
Technical Context
This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, delivering two consecutive 36-bit words per access. Read latency is 1.5 cycles when DOFF = HIGH (DDR II mode) or 1 cycle when DOFF = LOW (DDR I mode).
It uses dual input clocks (K/K) for address/control latching and dual output clocks (C/C) with corresponding echo clocks (CQ/CQ) to compensate for board-level flight time skew. All data inputs and outputs are registered to respective clock edges, and output drive strength is calibrated via external ZQ resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 18 Mbit (512K × 36) - supports wide-data-path buffering without external width expansion |
| Max Clock Frequency | 250 MHz - defines maximum sustained transaction rate of 250 million bursts/second |
| Data Rate | 500 MT/s - achieved via DDR interface transferring data on both rising edges of K/K |
| I/O Voltage | 1.8 V core / 1.4–1.8 V I/O - compatible with HSTL Class I and II, supports mixed-voltage system integration |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - surface-mount footprint optimized for high-density routing and thermal dissipation |
| Read Latency | 1 or 1.5 clock cycles - selectable via DOFF pin to match controller timing budget or legacy DDR-I compatibility |
| Output Drive | Variable HSTL - impedance programmable via ZQ pin to match 40–60 Ω trace impedance, reducing signal integrity margin loss |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; sampled on K/K rising edges during write, driven on C/C rising edges during read |
| K / K | Positive/negative input clocks | Edge-aligned differential pair controlling all synchronous inputs; initiates every access on K rising edge |
| C / C | Positive/negative output data clocks | Deskew-capable clocks for read data; enable precise capture timing across multiple devices on same bus |
| CQ / CQ | Echo clocks referenced to C/C | Free-running copies synchronized to C/C; simplify receiver-side clock-data alignment without PLL at controller |
| DOFF | DDR mode select input | Configures read latency: HIGH = 1.5-cycle DDR II mode; LOW = 1-cycle DDR I mode for backward compatibility |
| ZQ | Output impedance calibration reference | Connects to external resistor to ground; sets DQ/CQ output drive strength to ±10% of target impedance |
| LD | Load strobe input | Latches address and R/W state on K rising edge; defines start of each 2-word burst transaction |
| BWS[3:0] | Byte write select inputs | Four active-low signals enabling independent 9-bit byte writes; avoids full-word overwrite in partial updates |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling by 50% versus single-word SRAMs, lowering EMI and controller overhead |
| Programmable output impedance (ZQ) | Enables trace impedance matching without external series resistors, improving signal fidelity at 500 MT/s |
| Selectable DDR I/II read latency | DOFF pin allows runtime switching between 1-cycle (legacy) and 1.5-cycle (optimized) timing modes |
| Echo clock outputs (CQ/CQ) | Eliminates need for controller-side delay-locked loops (DLLs) to align read data, simplifying high-speed capture logic |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system programming without dedicated debug headers or probes |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-throughput, low-latency buffer interfacing directly to MAC-layer controllers via DDR bus. Use Value: 512K × 36 organization matches typical packet descriptor size; 250 MHz clock sustains ≥9 Gbps aggregate bandwidth. |
Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards requiring deterministic access timing. IC Role / Device Role / Timing Role: Synchronous pipeline stage between framer ASIC and traffic manager, operating in DDR I mode for timing predictability. Use Value: 1-cycle read latency (DOFF = LOW) ensures sub-4 ns access jitter; HSTL I/O meets SONET jitter compliance. |
| Baseband Processing Cache | Radar Signal Processing FIFO |
|
Use Scenario: Temporary storage of OFDM symbol coefficients in LTE eNodeB baseband units. IC Role / Device Role / Timing Role: Burst-access cache feeding FFT/IFFT engines, synchronized to symbol timing clock. Use Value: Two-word burst aligns with 16-QAM/64-QAM symbol packing; 1.8 V core reduces power vs. 3.3 V SRAM alternatives. |
Use Scenario: Real-time buffering of ADC samples in phased-array radar front-ends before DSP processing. IC Role / Device Role / Timing Role: High-reliability FIFO with echo clocks ensuring deterministic sample-to-processing latency. Use Value: CQ/CQ outputs allow FPGA-based capture logic to achieve <100 ps setup/hold margin at 500 MT/s. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C331024B-250BIN | 32-Mbit (1M × 32), 250 MHz, LVCMOS I/O, no echo clocks or ZQ calibration | Requires external DLL for data capture; lacks impedance tuning; wider data bus but lower density efficiency | Prefer when system uses LVCMOS interfaces and controller handles deskew internally |
| IS61WV102436BLL-250BLI | 36-Mbit (1M × 36), 250 MHz, SSTL-2 I/O, no DOFF-selectable latency or JTAG | Higher density but incompatible I/O standard; no latency mode flexibility; no boundary scan support | Choose only if SSTL-2 ecosystem is fixed and JTAG testability is not required |
Compared with AS7C331024B-250BIN and IS61WV102436BLL-250BLI, CY7C1320KV18-250BZXC uniquely delivers echo clocks for simplified high-speed capture, ZQ-based impedance tuning for signal integrity, and DOFF-configurable latency-critical for systems where timing margin and board-level signal integrity are constrained.
Availability
CY7C1320KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal processing FIFO applications requiring stable component supply and long-term production continuity.
Supply support for CY7C1320KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and system-level timing robustness.
The CY7C13xxKV18 family targets high-speed networking and real-time signal processing systems requiring deterministic DDR-II SRAM performance with minimal controller-side timing compensation logic.
FAQ
What is the function of the DOFF pin on CY7C1320KV18-250BZXC?
The DOFF (DDR Off) pin selects read latency mode: when asserted HIGH, the device operates in DDR II mode with 1.5-cycle latency; when LOW, it reverts to DDR I mode with 1-cycle latency. This enables compatibility with legacy controllers while allowing optimized timing in new designs. The pin is sampled synchronously on the K clock edge during initialization.
Can CY7C1320KV18-250BZXC operate without external C and C clocks?
Yes - the device supports single-clock mode using only K and K for both input and output timing. In this configuration, read data is driven on K/K rising edges, and CQ/CQ are generated relative to K/K. However, echo clock functionality and optimal deskew capability require external C/C signals.
How is output impedance calibrated using the ZQ pin?
ZQ connects to an external precision resistor (typically 240 Ω) tied to ground. During calibration, the device measures this resistance and adjusts its DQ and CQ output driver strength to deliver 0.2 × RQ (e.g., 48 Ω). Direct connection to VDDQ enables minimum impedance mode (~30 Ω); floating or grounding ZQ is prohibited.
Is CY7C1320KV18-250BZXC pin-compatible with other members of the CY7C13xxKV18 family?
No - CY7C1320KV18 (512K × 36) and CY7C1318KV18 (1M × 18) share the same 165-ball FBGA package and pinout, but differ in address width (19 vs. 20 bits), BWS count (4 vs. 2), and DQ width (36 vs. 18). Interchange requires PCB layout revision and firmware address mapping changes.
CY7C1320KV18-250BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1320KV18-250BZXC FAQ
1.How can I place an order for CY7C1320KV18-250BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1320KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1320KV18-250BZXC reliable?
The price and inventory of CY7C1320KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1320KV18-250BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1320KV18-250BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1320KV18-250BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1320KV18-250BZXC?
CY7C1320KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1320KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1320KV18-250BZXC?
For technical support, including CY7C1320KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1320KV18-250BZXC requirements.
6.How does Aetrix verify that CY7C1320KV18-250BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1320KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1320KV18-250BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1320KV18-250BZXC?
All CY7C1320KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1320KV18-250BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1320KV18-250BZXC part is unused and in its original packaging.
Return procedure for CY7C1320KV18-250BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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