Infineon Technologies CY7C1320KV18-250BZXI

Overview

CY7C1320KV18-250BZXI from Cypress Semiconductor is a 18-Mbit DDR II synchronous SRAM configured as 512K × 36, operating at 250 MHz with 1.8 V core supply and HSTL I/O. It implements two-word burst reads/writes synchronized to dual K/K input clocks and outputs data aligned to C/C echo clocks (CQ/CQ), enabling precise timing in high-speed memory subsystems. Used in network packet buffers, baseband processing, and FPGA co-processor caches where low-latency, burst-access memory is required.

For engineers reviewing the CY7C1320KV18-250BZXI datasheet, CY7C1320KV18-250BZXI pinout, CY7C1320KV18-250BZXI application, or CY7C1320KV18-250BZXI equivalent, this page delivers verified specifications, validated pin functions, confirmed DDR II timing behavior (1.5-cycle read latency with DOFF HIGH), package-mapped FBGA footprint, and real-world alternative part comparisons - all derived from Cypress Document #001-58905 Rev. *L.

Technical Context

The CY7C1320KV18-250BZXI integrates a pipelined SRAM core with synchronous DDR II peripheral logic, using a 1-bit burst counter driven by A0 to generate sequential 36-bit word pairs. All address, control, and data inputs are registered on rising edges of K and K clocks; output data is edge-aligned to C and C (or K/K in single-clock mode), with echo clocks CQ/CQ referenced to those output clocks for deterministic capture.

It supports programmable output impedance via ZQ pin (0.2 × R_Q), variable-drive HSTL outputs (1.4 V–VDD), and IEEE 1149.1 JTAG boundary scan. Read latency is configurable: 1 cycle (DDR-I mode) when DOFF = LOW, or 1.5 cycles (DDR-II mode) when DOFF = HIGH - both validated under 250 MHz operation with 1.8 V supply.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant (Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C33256A-25BIN and IS61WV102432BLL-25BLI, the CY7C1320KV18-250BZXI uniquely delivers DDR-II timing, two-word burst, and echo clock alignment - essential for modern high-speed memory subsystems where deterministic latency and signal integrity outweigh raw density.

Availability

CY7C1320KV18-250BZXI is available at Aetrix Electronics and suitable for telecom packet buffering, FPGA co-processor caching, and baseband processing applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1320KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

The CY7C13xxKV18 product line delivers DDR II SRAMs optimized for burst-intensive, low-latency applications in communications infrastructure and FPGA-adjacent memory subsystems - prioritizing echo-clock synchronization and impedance-controlled I/O.

FAQ

What is the function of the DOFF pin on CY7C1320KV18-250BZXI?

The DOFF (DDR Off) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle read latency; when LOW, it reverts to DDR-I mode with 1-cycle latency. This setting directly affects internal pipeline depth and must be stable before initialization. It does not disable DDR functionality - only selects latency behavior.

Can CY7C1320KV18-250BZXI operate with only K and K clocks, without C and C?

Yes - in single-clock mode, the device uses K and K for both input capture and output data timing. In this configuration, C and C pins are unused, and CQ/CQ echo clocks are generated relative to K/K instead of C/C. Output data still appears on DQ[35:0] aligned to K/K rising edges, preserving timing predictability without external output clocks.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external resistor (R_Q) tied to ground; the device measures this resistance and adjusts its DQ and CQ output driver strength to 0.2 × R_Q. For standard 50 Ω traces, R_Q = 240 Ω yields 48 Ω output impedance. Alternatively, tying ZQ to VDDQ enables minimum-impedance mode (~25 Ω), useful for short-trace or point-to-point interconnects.

Is CY7C1320KV18-250BZXI pin-compatible with CY7C1318KV18-250BZXI?

No - although both share the same 165-ball FBGA package and many signal names, their address and data pin mappings differ significantly. CY7C1318KV18 uses DQ[17:0] and 20 address lines (A[19:0]), while CY7C1320KV18 uses DQ[35:0] and 19 address lines (A[18:0]). BWS pin count and assignment also differ (2 vs. 4), making direct substitution electrically invalid.