Infineon Technologies CY7C1320KV18-333BZC

Overview

CY7C1320KV18-333BZC from Cypress Semiconductor is a 18-Mbit synchronous DDR II SRAM configured as 512K × 36, operating at 333 MHz with double-data-rate (666 MT/s) I/O, 1.8 V core supply, and HSTL-compatible interfaces. It implements two-word burst addressing, echo clocks (CQ/CQ), and a PLL for precise data placement-used in high-bandwidth packet buffering and network switch fabric memory subsystems.

For engineers reviewing the CY7C1320KV18-333BZC datasheet, CY7C1320KV18-333BZC pinout, CY7C1320KV18-333BZC application, or CY7C1320KV18-333BZC equivalent, key selection criteria include DDR-II burst timing, dual-clock domain support (K/K and C/C), DOFF-configurable read latency (1 or 1.5 cycles), HSTL drive flexibility (1.4–1.8 V), and 165-ball FBGA package compatibility with high-density routing.

Technical Context

This SRAM uses pipelined synchronous architecture with internal self-timed writes and burst counter logic that increments A0 to generate sequential 36-bit word addresses. All control inputs (R/W, LD, BWS[3:0]) are registered on K's rising edge, while write data is latched on both K and K edges.

Read data is driven synchronously on C and C rising edges with echo clocks CQ/CQ aligned to output timing; when C/C are unused, K/K serve as fallback output clocks. The DOFF pin selects between DDR-I (1-cycle latency, DOFF = LOW) and DDR-II (1.5-cycle latency, DOFF = HIGH) operation modes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, ball pitch 0.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with AS7C331024B-333BIN and IS61WV102432BLL-333B3, CY7C1320KV18-333BZC uniquely delivers DDR-II burst efficiency, echo-clock–assisted timing closure, and programmable latency - making it optimal for bandwidth-constrained, skew-sensitive networking and telecom systems where controller resources are limited.

Availability

CY7C1320KV18-333BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial real-time controller buffer applications requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1320KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets.

CY7C1320KV18 belongs to the DDR II SRAM product line engineered specifically for high-bandwidth, low-latency packet and frame buffering in networking infrastructure - emphasizing timing predictability, skew resilience, and burst efficiency over raw density.

FAQ

What is the function of the DOFF pin on CY7C1320KV18-333BZC?

The DOFF (DDR Off) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle read latency and optimized burst timing; when LOW, it reverts to DDR-I mode with 1-cycle latency. This setting directly affects controller pipeline depth and must be fixed at power-up - it is not dynamically switchable during operation.

Can CY7C1320KV18-333BZC operate without external C and C clocks?

Yes - in single-clock mode, the device uses K and K as both input and output clocks. In this configuration, CQ and CQ are generated relative to K/K instead of C/C, and data is driven on K/K rising edges. However, echo-clock–assisted timing closure and flight-time deskewing are lost, limiting maximum reliable trace length and channel count.

How does ZQ calibration affect signal integrity?

ZQ calibration adjusts the output driver impedance of DQ, CQ, and CQ pins to match the system data bus (typically 48–50 Ω). Using a 240 Ω resistor from ZQ to GND sets nominal output impedance to 48 Ω (0.2 × 240 Ω), reducing reflections and improving eye diagram margins - especially critical at 666 MT/s DDR rates.

Is CY7C1320KV18-333BZC pin-compatible with CY7C1318KV18-333BZC?

No - although both share the same 165-ball FBGA footprint, their pinouts differ significantly: CY7C1318KV18 uses DQ[17:0] and BWS[1:0], while CY7C1320KV18 uses DQ[35:0] and BWS[3:0]. Address bus width also differs (20 vs. 19 bits), and BWS pin assignments are incompatible. Board-level replacement requires full layout revision.