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Infineon Technologies CY7C1320KV18-333BZXC

Part No.:
CY7C1320KV18-333BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1320KV18-333BZXC.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,600

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Product details

Overview

CY7C1320KV18-333BZXC from Cypress Semiconductor is a 18-Mbit DDR II synchronous SRAM configured as 512K × 36, operating at 333 MHz with double-data-rate (666 MT/s) I/O, 1.8 V core supply, HSTL-compatible interfaces, and integrated echo clocks (CQ/CQ) for precise high-speed data capture in networking and telecom buffer applications.

For engineers reviewing the CY7C1320KV18-333BZXC datasheet, CY7C1320KV18-333BZXC pinout, CY7C1320KV18-333BZXC application, or CY7C1320KV18-333BZXC equivalent, key selection considerations include its two-word burst architecture, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, dual-clock domain timing (K/K and C/C), and 165-ball FBGA package compatibility with high-density memory subsystems.

Technical Context

The CY7C1320KV18 implements a synchronous pipelined SRAM core with DDR II architecture, using separate rising-edge-triggered K/K clocks for address/control/data input registration and C/C clocks for output data timing. Its burst counter increments A0 to deliver two consecutive 36-bit words per access.

It supports both dual-clock mode (with independent C/C and CQ/CQ for flight-time deskewing) and single-clock mode (using K/K for outputs), and features on-chip PLL for accurate data placement, JTAG 1149.1 test access, and programmable ZQ impedance calibration referenced to external resistor or VDDQ.

Key Specifications

Parameter Value and Actual Design Meaning
Density 18 Mbit (512K × 36 organization)
Max Clock Frequency 333 MHz - enables 666 MT/s effective data rate via DDR
Read Latency 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - selectable timing mode
Supply Voltages 1.8 V core (VDD); 1.4–1.8 V I/O (VDDQ) - supports mixed-voltage system interfacing
Interface Standard HSTL Class I inputs/outputs - ensures signal integrity at >300 MHz
Package 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-pin-count, low-inductance routing
Temperature Range 0 °C to +70 °C - commercial-grade operation for embedded infrastructure

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; sampled on K/K rising edges during writes, driven on C/C rising edges during reads
K / K Positive/negative input clocks Edge-aligned differential pair for all synchronous inputs (address, R/W, LD, BWS); defines access initiation timing
C / C Positive/negative output data clocks Deskew-capable clock pair for read data; enables board-level flight-time matching across multiple devices
CQ / CQ Echo clocks referenced to C/C Free-running, phase-aligned copies of C/C; simplify receiver-side data capture without additional clock routing
DOFF Read latency configuration input Active-HIGH selects 1.5-cycle latency; LOW enables 1-cycle DDR-I compatible timing
ZQ Output impedance calibration reference Connect to external resistor to ground to tune DQ/CQ drive strength to 0.2 × RQ; or tie to VDDQ for minimum impedance
BWS[3:0] Byte write select inputs Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]) - enables partial-word writes without read-modify-write

Key Features

Feature Design Value
Two-word burst architecture Reduces external address bus toggling by 50% versus single-word SRAMs - lowers system EMI and routing complexity
Configurable read latency (1 or 1.5 cycles) Enables seamless migration between DDR-I and DDR-II timing domains without hardware change
Dual-output clock domain (C/C + CQ/CQ) Eliminates need for external delay-matched clock traces - simplifies PCB layout for multi-SRAM systems
Programmable HSTL output drive Adjusts edge rate and termination to match trace impedance - improves signal fidelity at 666 MT/s
JTAG 1149.1 boundary scan Supports automated production testing and interconnect validation in dense BGA layouts

Applications

Telecom Line Cards Network Packet Buffers

Use Scenario: High-throughput packet buffering in 10G/25G Ethernet line cards requiring deterministic latency and burst throughput.

IC Role / Device Role / Timing Role: Primary data buffer between MAC and switch fabric; operates in DDR-II mode with DOFF=HIGH for 1.5-cycle latency to align with pipeline stages.

Use Value: 666 MT/s bandwidth and 36-bit wide interface reduce number of parallel SRAMs needed - cuts board area and power by ~40% vs. 18-bit alternatives.

Use Scenario: Temporary storage for ingress/egress packet headers and payload fragments in Layer 2/3 switches.

IC Role / Device Role / Timing Role: Synchronous burst memory supporting two-word read/write per clock - matches typical packet header + payload segmentation.

Use Value: Byte-write select (BWS[3:0]) enables efficient partial updates of packet metadata without full-word overwrites - reduces bus contention and power.

Baseband Processing Units Industrial Real-Time Controllers

Use Scenario: Inter-stage buffering in LTE/5G baseband processing chains where deterministic access timing is critical for FFT and channel estimation pipelines.

IC Role / Device Role / Timing Role: Low-latency memory stage synchronized to FPGA-based DSP logic using matched C/C and CQ/CQ clocks.

Use Value: Echo clocks eliminate setup/hold uncertainty at receiver - enables reliable 333 MHz operation even with ±15 ps skew across 10+ devices.

Use Scenario: Deterministic data logging and control loop storage in PLCs and motion controllers requiring guaranteed worst-case access time.

IC Role / Device Role / Timing Role: Burst-access SRAM used for cyclic buffer management in real-time OS kernels - configured with DOFF=LOW for minimal 1-cycle latency.

Use Value: On-chip self-timed write circuitry ensures consistent write completion timing - eliminates variable propagation delays seen in asynchronous SRAMs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C331024B-20BIN Asynchronous 32Mbit SRAM, 20 ns access, 3.3 V only, no DDR or burst capability Used in legacy control-plane buffers where timing determinism is less critical than cost Select only if system lacks DDR clocking infrastructure and tolerates higher latency variability
IS61WV102432BLL-10TLI Synchronous 32Mbit SRAM, 10 ns cycle time, single-data-rate, 3.3 V/2.5 V, no echo clocks or ZQ calibration Fits simpler FPGA-based designs needing predictable 1-cycle latency but lacking high-speed deskew requirements Choose when board layout constraints prevent CQ/CQ routing or when JTAG test is not required

Compared with AS7C331024B-20BIN and IS61WV102432BLL-10TLI, CY7C1320KV18-333BZXC delivers 2.2× higher effective bandwidth via DDR, eliminates external clock deskew components through CQ/CQ, and supports impedance tuning for signal integrity - making it uniquely suited for next-generation telecom and high-end industrial buffers.

Availability

CY7C1320KV18-333BZXC is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and industrial real-time controllers requiring stable component supply, long-lifecycle support, and verified DDR-II timing compliance.

Supply support for CY7C1320KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1320KV18 belongs to Cypress's DDR II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in infrastructure equipment where deterministic timing, signal integrity, and multi-device synchronization are critical.

FAQ

What is the function of the DOFF pin on CY7C1320KV18-333BZXC?

The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables DDR-II mode with 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it reverts to DDR-I mode with 1-cycle latency for backward compatibility. This setting directly affects the timing relationship between C/C and data valid windows, and must be held stable during operation.

Can CY7C1320KV18-333BZXC operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this mode, CQ and CQ are generated relative to K/K instead of C/C, and data is driven on K/K rising edges. However, echo clock precision and flight-time deskew benefits are lost, limiting maximum reliable speed to ~250 MHz in complex layouts.

How does ZQ calibration work on CY7C1320KV18-333BZXC?

ZQ calibration adjusts output driver impedance by comparing internal reference current against an external resistor (RQ) tied between ZQ and GND. The resulting 0.2 × RQ impedance tunes DQ and CQ drive strength to match PCB trace impedance. If ZQ is tied to VDDQ, the device enters minimum-impedance mode (≈20 Ω), suitable for short, well-terminated traces.

Is CY7C1320KV18-333BZXC pin-compatible with CY7C1318KV18-333BZXC?

No - although both share the same 165-ball FBGA package and many signal names, their address widths differ (CY7C1320KV18 uses A[18:0]; CY7C1318KV18 uses A[19:0]), and BWS pin count differs (4 vs. 2). Their DQ bus widths (36-bit vs. 18-bit) and internal array mapping are incompatible, requiring PCB redesign for substitution.

CY7C1320KV18-333BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1320KV18-333BZXC FAQ

1.How can I place an order for CY7C1320KV18-333BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1320KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1320KV18-333BZXC reliable?

The price and inventory of CY7C1320KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1320KV18-333BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1320KV18-333BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1320KV18-333BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1320KV18-333BZXC?

CY7C1320KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1320KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1320KV18-333BZXC?

For technical support, including CY7C1320KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1320KV18-333BZXC requirements.

6.How does Aetrix verify that CY7C1320KV18-333BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1320KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1320KV18-333BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1320KV18-333BZXC?

All CY7C1320KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1320KV18-333BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1320KV18-333BZXC part is unused and in its original packaging.

Return procedure for CY7C1320KV18-333BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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