Infineon Technologies CY7C1320KV18-333BZXC
- Part No.:
- CY7C1320KV18-333BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1320KV18-333BZXC.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1320KV18-333BZXC from Cypress Semiconductor is a 18-Mbit DDR II synchronous SRAM configured as 512K × 36, operating at 333 MHz with double-data-rate (666 MT/s) I/O, 1.8 V core supply, HSTL-compatible interfaces, and integrated echo clocks (CQ/CQ) for precise high-speed data capture in networking and telecom buffer applications.
For engineers reviewing the CY7C1320KV18-333BZXC datasheet, CY7C1320KV18-333BZXC pinout, CY7C1320KV18-333BZXC application, or CY7C1320KV18-333BZXC equivalent, key selection considerations include its two-word burst architecture, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, dual-clock domain timing (K/K and C/C), and 165-ball FBGA package compatibility with high-density memory subsystems.
Technical Context
The CY7C1320KV18 implements a synchronous pipelined SRAM core with DDR II architecture, using separate rising-edge-triggered K/K clocks for address/control/data input registration and C/C clocks for output data timing. Its burst counter increments A0 to deliver two consecutive 36-bit words per access.
It supports both dual-clock mode (with independent C/C and CQ/CQ for flight-time deskewing) and single-clock mode (using K/K for outputs), and features on-chip PLL for accurate data placement, JTAG 1149.1 test access, and programmable ZQ impedance calibration referenced to external resistor or VDDQ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 18 Mbit (512K × 36 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s effective data rate via DDR |
| Read Latency | 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - selectable timing mode |
| Supply Voltages | 1.8 V core (VDD); 1.4–1.8 V I/O (VDDQ) - supports mixed-voltage system interfacing |
| Interface Standard | HSTL Class I inputs/outputs - ensures signal integrity at >300 MHz |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-pin-count, low-inductance routing |
| Temperature Range | 0 °C to +70 °C - commercial-grade operation for embedded infrastructure |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; sampled on K/K rising edges during writes, driven on C/C rising edges during reads |
| K / K | Positive/negative input clocks | Edge-aligned differential pair for all synchronous inputs (address, R/W, LD, BWS); defines access initiation timing |
| C / C | Positive/negative output data clocks | Deskew-capable clock pair for read data; enables board-level flight-time matching across multiple devices |
| CQ / CQ | Echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C; simplify receiver-side data capture without additional clock routing |
| DOFF | Read latency configuration input | Active-HIGH selects 1.5-cycle latency; LOW enables 1-cycle DDR-I compatible timing |
| ZQ | Output impedance calibration reference | Connect to external resistor to ground to tune DQ/CQ drive strength to 0.2 × RQ; or tie to VDDQ for minimum impedance |
| BWS[3:0] | Byte write select inputs | Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]) - enables partial-word writes without read-modify-write |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces external address bus toggling by 50% versus single-word SRAMs - lowers system EMI and routing complexity |
| Configurable read latency (1 or 1.5 cycles) | Enables seamless migration between DDR-I and DDR-II timing domains without hardware change |
| Dual-output clock domain (C/C + CQ/CQ) | Eliminates need for external delay-matched clock traces - simplifies PCB layout for multi-SRAM systems |
| Programmable HSTL output drive | Adjusts edge rate and termination to match trace impedance - improves signal fidelity at 666 MT/s |
| JTAG 1149.1 boundary scan | Supports automated production testing and interconnect validation in dense BGA layouts |
Applications
| Telecom Line Cards | Network Packet Buffers |
|---|---|
|
Use Scenario: High-throughput packet buffering in 10G/25G Ethernet line cards requiring deterministic latency and burst throughput. IC Role / Device Role / Timing Role: Primary data buffer between MAC and switch fabric; operates in DDR-II mode with DOFF=HIGH for 1.5-cycle latency to align with pipeline stages. Use Value: 666 MT/s bandwidth and 36-bit wide interface reduce number of parallel SRAMs needed - cuts board area and power by ~40% vs. 18-bit alternatives. |
Use Scenario: Temporary storage for ingress/egress packet headers and payload fragments in Layer 2/3 switches. IC Role / Device Role / Timing Role: Synchronous burst memory supporting two-word read/write per clock - matches typical packet header + payload segmentation. Use Value: Byte-write select (BWS[3:0]) enables efficient partial updates of packet metadata without full-word overwrites - reduces bus contention and power. |
| Baseband Processing Units | Industrial Real-Time Controllers |
|
Use Scenario: Inter-stage buffering in LTE/5G baseband processing chains where deterministic access timing is critical for FFT and channel estimation pipelines. IC Role / Device Role / Timing Role: Low-latency memory stage synchronized to FPGA-based DSP logic using matched C/C and CQ/CQ clocks. Use Value: Echo clocks eliminate setup/hold uncertainty at receiver - enables reliable 333 MHz operation even with ±15 ps skew across 10+ devices. |
Use Scenario: Deterministic data logging and control loop storage in PLCs and motion controllers requiring guaranteed worst-case access time. IC Role / Device Role / Timing Role: Burst-access SRAM used for cyclic buffer management in real-time OS kernels - configured with DOFF=LOW for minimal 1-cycle latency. Use Value: On-chip self-timed write circuitry ensures consistent write completion timing - eliminates variable propagation delays seen in asynchronous SRAMs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C331024B-20BIN | Asynchronous 32Mbit SRAM, 20 ns access, 3.3 V only, no DDR or burst capability | Used in legacy control-plane buffers where timing determinism is less critical than cost | Select only if system lacks DDR clocking infrastructure and tolerates higher latency variability |
| IS61WV102432BLL-10TLI | Synchronous 32Mbit SRAM, 10 ns cycle time, single-data-rate, 3.3 V/2.5 V, no echo clocks or ZQ calibration | Fits simpler FPGA-based designs needing predictable 1-cycle latency but lacking high-speed deskew requirements | Choose when board layout constraints prevent CQ/CQ routing or when JTAG test is not required |
Compared with AS7C331024B-20BIN and IS61WV102432BLL-10TLI, CY7C1320KV18-333BZXC delivers 2.2× higher effective bandwidth via DDR, eliminates external clock deskew components through CQ/CQ, and supports impedance tuning for signal integrity - making it uniquely suited for next-generation telecom and high-end industrial buffers.
Availability
CY7C1320KV18-333BZXC is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and industrial real-time controllers requiring stable component supply, long-lifecycle support, and verified DDR-II timing compliance.
Supply support for CY7C1320KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1320KV18 belongs to Cypress's DDR II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in infrastructure equipment where deterministic timing, signal integrity, and multi-device synchronization are critical.
FAQ
What is the function of the DOFF pin on CY7C1320KV18-333BZXC?
The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables DDR-II mode with 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it reverts to DDR-I mode with 1-cycle latency for backward compatibility. This setting directly affects the timing relationship between C/C and data valid windows, and must be held stable during operation.
Can CY7C1320KV18-333BZXC operate without external C and C clocks?
Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this mode, CQ and CQ are generated relative to K/K instead of C/C, and data is driven on K/K rising edges. However, echo clock precision and flight-time deskew benefits are lost, limiting maximum reliable speed to ~250 MHz in complex layouts.
How does ZQ calibration work on CY7C1320KV18-333BZXC?
ZQ calibration adjusts output driver impedance by comparing internal reference current against an external resistor (RQ) tied between ZQ and GND. The resulting 0.2 × RQ impedance tunes DQ and CQ drive strength to match PCB trace impedance. If ZQ is tied to VDDQ, the device enters minimum-impedance mode (≈20 Ω), suitable for short, well-terminated traces.
Is CY7C1320KV18-333BZXC pin-compatible with CY7C1318KV18-333BZXC?
No - although both share the same 165-ball FBGA package and many signal names, their address widths differ (CY7C1320KV18 uses A[18:0]; CY7C1318KV18 uses A[19:0]), and BWS pin count differs (4 vs. 2). Their DQ bus widths (36-bit vs. 18-bit) and internal array mapping are incompatible, requiring PCB redesign for substitution.
CY7C1320KV18-333BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1320KV18-333BZXC FAQ
1.How can I place an order for CY7C1320KV18-333BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1320KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1320KV18-333BZXC reliable?
The price and inventory of CY7C1320KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1320KV18-333BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1320KV18-333BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1320KV18-333BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1320KV18-333BZXC?
CY7C1320KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1320KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1320KV18-333BZXC?
For technical support, including CY7C1320KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1320KV18-333BZXC requirements.
6.How does Aetrix verify that CY7C1320KV18-333BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1320KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1320KV18-333BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1320KV18-333BZXC?
All CY7C1320KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1320KV18-333BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1320KV18-333BZXC part is unused and in its original packaging.
Return procedure for CY7C1320KV18-333BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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