Infineon Technologies CY7C1328G-133AXI

Overview

CY7C1328G-133AXI from Cypress Semiconductor is a 4-Mbit (256K × 18) pipelined synchronous SRAM with registered I/O, 133 MHz clock operation, 4.0 ns clock-to-output delay, 3.3 V core / 2.5 V or 3.3 V I/O supply, and support for Intel Pentium™-compatible interleaved or linear burst sequences. It serves as high-speed secondary cache in embedded processor systems requiring deterministic timing and depth-expansion capability without wait states.

For engineers reviewing the CY7C1328G-133AXI datasheet, CY7C1328G-133AXI pinout, CY7C1328G-133AXI application, or CY7C1328G-133AXI equivalent, key selection criteria include burst mode configurability via MODE pin, ZZ sleep mode behavior (requires external ground per errata), double-cycle deselect timing, synchronous self-timed write control, and TQFP-100 package compatibility with JEDEC JESD8-5 I/O standards.

Technical Context

The device implements a two-bit on-chip wraparound burst counter synchronized to CLK, with address capture triggered by either ADSP (processor strobe) or ADSC (controller strobe) - prioritizing ADSP when both are active. All synchronous inputs (addresses, CE1/CE2/CE3, BW[A:B], BWE, GW, ADV, ADSP/ADSC) are registered on the rising edge of CLK.

It features pipelined enable logic that delays output buffer disable by one cycle during deselect, enabling seamless depth expansion. Write operations are self-timed and synchronous; byte writes are controlled jointly by BWE and BW[A:B], while GW overrides all byte controls for full-word writes. OE is asynchronous and masks outputs during first-cycle recovery from deselected state.

Key Specifications

Pinout & Package

The CY7C1328G-133AXI is housed in a Pb-free 100-pin Thin Quad Flat Package (TQFP) with 0.5 mm pitch, JEDEC MO-140AC compliant, and thermal pad exposed on bottom for enhanced heat dissipation in high-frequency cache applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT71V2576S133BG and IS61WV25618BLL-133TQLI, the CY7C1328G-133AXI uniquely delivers dual-address-strobe control, configurable burst mode, ZZ sleep with errata-managed grounding, and 2.5/3.3 V I/O flexibility - making it the only choice for legacy x86 cache upgrades and mixed-voltage deterministic systems.

Availability

CY7C1328G-133AXI is available at Aetrix Electronics and suitable for Intel Pentium™-based embedded systems, industrial motion controllers, and avionics data acquisition units requiring stable component supply, long-lifecycle support, and verified timing compliance.

Supply support for CY7C1328G-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1328G belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency cache and buffer applications in x86-compatible and real-time embedded systems requiring burst-mode memory access.

FAQ

What is the correct configuration for the ZZ pin on CY7C1328G-133AXI?

The ZZ pin (Pin 64) must be externally connected to ground per Errata on Page 20 of the datasheet. Although described as active-HIGH sleep input, internal pull-down and silicon behavior require hard grounding to prevent unintended entry into sleep mode during normal operation. Leaving it floating or tying to VDD will cause functional failure.

How does the CY7C1328G-133AXI handle burst address generation?

Burst addresses are generated internally by a two-bit wraparound counter loaded with A[1:0] on the first ADSP or ADSC assertion. Subsequent addresses increment on each CLK rise when ADV is LOW. Burst order (linear vs. interleaved) is selected statically via the MODE pin and cannot be changed dynamically during operation.

Can CY7C1328G-133AXI operate with 2.5 V I/O while maintaining 3.3 V core voltage?

Yes - VDD is strictly 3.3 V ± 0.3 V for core logic, while VDDQ accepts either 2.5 V ± 0.2 V or 3.3 V ± 0.3 V. This dual-voltage capability allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters, provided VSSQ is referenced to the same ground as VDDQ.

What happens during a write cycle when both GW and BW[A:B] are asserted?

GW (global write) has priority over byte write controls. When GW is LOW on the second clock edge of a write cycle, all four bytes (DQA/DQPA and DQB/DQPB) are written regardless of BW[A:B] or BWE states. Byte write functionality is disabled entirely during GW assertion.