Infineon Technologies CY7C1329H-133AXC

Overview

CY7C1329H-133AXC from Cypress Semiconductor is a 2-Mbit (64K × 32) pipelined synchronous SRAM with registered I/O, 3.3 V core supply, 2.5 V/3.3 V I/O compatibility, and 4.0 ns clock-to-output delay at 133 MHz. It supports Intel Pentium®-compatible interleaved or linear burst sequences and is used in high-speed secondary cache subsystems for embedded processors and communications controllers.

For engineers reviewing the CY7C1329H-133AXC datasheet, CY7C1329H-133AXC pinout, CY7C1329H-133AXC application, or CY7C1329H-133AXC equivalent, key selection criteria include burst mode configurability (MODE pin), synchronous self-timed write capability, byte-selectable write control (BWA–BWD + BWE), and JEDEC-standard 100-pin TQFP packaging with dual-voltage I/O support.

Technical Context

The device implements a two-bit synchronous wraparound burst counter fed by A1:A0, enabling programmable interleaved or linear address sequencing under MODE pin control. All synchronous inputs-including addresses, CE1/CE2/CE3, ADSP/ADSC, ADV, BWA–BWD, BWE, GW, and CLK-are registered on the rising edge of CLK.

It features separate processor (ADSP) and controller (ADSC) address strobes, asynchronous OE and ZZ controls, and on-chip self-timed write logic that eliminates external write timing constraints. Output registers ensure deterministic tCO = 4.0 ns at 133 MHz, while Byte Write and Global Write paths provide flexible data granularity without external gating logic.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm), JEDEC-standard lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with IDT71V2576S133BG and IS61LV25632AL-133TQLI, the CY7C1329H-133AXC uniquely delivers configurable burst order, dual-voltage I/O, asynchronous sleep, and hierarchical chip enable decoding-making it optimal for legacy x86 cache and multi-protocol embedded buffering where interface adaptability is critical.

Availability

CY7C1329H-133AXC is available at Aetrix Electronics and suitable for secondary cache subsystems, telecom line card buffers, network packet processing engines, and real-time DSP co-processor memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1329H-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and programmable solutions for embedded systems.

The CY7C1329H belongs to Cypress's high-performance synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in x86-compatible and communications infrastructure applications.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst address sequence: tied to GND for linear burst, or to VDD/floating for Intel Pentium®-compatible interleaved burst. It is a static strap pin sampled once at power-up or reset; changing its state during operation has no effect and may cause undefined behavior. Internal pull-up ensures safe default to interleaved mode if left unconnected.

How does the CY7C1329H-133AXC handle simultaneous ADSP and ADSC assertion?

When both ADSP and ADSC are asserted LOW, the device recognizes only ADSP and ignores ADSC. This priority hierarchy ensures deterministic address capture in systems where both processor and controller share the same memory bus. ADSP-triggered accesses require two clock cycles for write completion, while ADSC-triggered writes complete in one cycle.

Can the ZZ sleep mode be entered and exited dynamically during normal operation?

Yes-ZZ is asynchronous and active HIGH; asserting ZZ HIGH places the device in low-power sleep mode with data retention, and deasserting it LOW restores full operation within one clock cycle. The internal pull-down ensures safe default to active mode if ZZ is left unconnected, and no external sequencing is required for entry/exit.

What is the role of CE2 being active HIGH while CE1 and CE3 are active LOW?

CE2 operates as an active-HIGH enable in a three-signal hierarchical chip select scheme: CE1 (active LOW) is primary enable, CE2 (active HIGH) acts as polarity-inverted secondary enable, and CE3 (active LOW) serves as tertiary enable. All three must be simultaneously asserted to activate the device-this arrangement supports flexible bank decoding in multi-SRAM systems without external logic.