Infineon Technologies CY7C1329H-133AXCT

Overview

CY7C1329H-133AXCT from Cypress Semiconductor is a 2-Mbit (64K × 32) pipelined synchronous SRAM with registered I/O, 3.3 V core supply, 2.5 V/3.3 V I/O compatibility, and 4.0 ns clock-to-output delay at 133 MHz. It supports Intel Pentium®-compatible interleaved or linear burst sequences and is used in high-speed secondary cache subsystems for embedded processors and communications controllers.

For engineers reviewing the CY7C1329H-133AXCT datasheet, CY7C1329H-133AXCT pinout, CY7C1329H-133AXCT application, or CY7C1329H-133AXCT equivalent, key selection factors include synchronous burst timing, byte-write granularity via BW[A:D]/BWE/GW controls, dual address strobe support (ADSP/ADSC), ZZ sleep mode, and JEDEC-standard 100-pin TQFP packaging.

Technical Context

The CY7C1329H-133AXCT implements a two-bit synchronous wraparound burst counter fed by A1:A0, enabling programmable interleaved or linear burst addressing per MODE pin configuration. All synchronous inputs-including address, data, CE1/CE2/CE3, ADSP/ADSC/ADV, and write controls-are registered on the rising edge of CLK.

It features pipelined read/write paths with separate processor (ADSP) and controller (ADSC) address strobes, asynchronous OE and ZZ controls, and on-chip self-timed write circuitry. Byte writes are enabled via BWE and BW[A:D], while GW provides global write override-both sampled synchronously on CLK rise.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IS61WV102432BLL-133TQLI and MT55LSD12832D-133:J, the CY7C1329H-133AXCT uniquely delivers dual-address-strobe support, hardware-configurable burst order, and integrated ZZ sleep-making it irreplaceable in legacy Pentium®-compatible or mixed-controller architectures where timing determinism and low-power retention are mandatory.

Availability

CY7C1329H-133AXCT is available at Aetrix Electronics and suitable for network router cache, industrial PLC memory buffer, and avionics data acquisition requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for CY7C1329H-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, with focus on reliability, timing precision, and industrial longevity.

The CY7C1329H belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic cache and buffer applications in telecom, industrial control, and aerospace systems demanding sub-5 ns access and robust burst sequencing.

FAQ

What is the function of the MODE pin on CY7C1329H-133AXCT?

The MODE pin is a static configuration input that selects burst address sequence: tied to GND for linear burst (sequential A0–A15 increment), or left floating/tied to VDD for Intel Pentium®-compatible interleaved burst. It must remain stable during operation and is sampled only at power-up or reset-not dynamically reconfigurable.

Can CY7C1329H-133AXCT operate with 2.5 V I/O while using 3.3 V core supply?

Yes. The device supports independent VDDQ (2.5 V or 3.3 V) and VDD (3.3 V) supplies. VDDQ powers only the I/O buffers and must be decoupled separately; mixing 2.5 V I/O with 3.3 V core is fully compliant per JESD8-5 and verified in the datasheet's electrical characteristics table.

How does ADSP differ from ADSC in timing behavior?

ADSP initiates a two-cycle write (address latched on first CLK, data written on second), while ADSC enables single-cycle writes. Both trigger address registration on CLK rise, but ADSP ignores ADV during the first cycle and requires explicit GW/BWE assertion on the second edge-critical for processor-driven cache fills.

Is the ZZ sleep mode compatible with asynchronous OE deassertion?

Yes. ZZ (asynchronous, active HIGH) and OE (asynchronous, active LOW) operate independently: ZZ reduces core current to ≤40 mA while preserving data, while OE controls I/O driver state. Both can be asserted simultaneously-OE HIGH tri-states outputs, ZZ HIGH disables core clocks-enabling lowest possible standby power without data loss.