Infineon Technologies CY7C1339G-133AXI

Overview

CY7C1339G-133AXI from Cypress Semiconductor is a 4-Mbit (128K × 32) pipelined synchronous SRAM with registered I/O, 133-MHz operation, 4.0 ns clock-to-output delay, 3.3V core / 2.5V–3.3V I/O supply support, and user-selectable linear or interleaved burst mode. It serves as high-speed secondary cache in embedded processor systems requiring deterministic timing and byte-granular write control.

For engineers reviewing the CY7C1339G-133AXI datasheet, CY7C1339G-133AXI pinout, CY7C1339G-133AXI application, or CY7C1339G-133AXI equivalent, key selection criteria include burst sequence compatibility (Pentium®-interleaved vs. linear), synchronous self-timed write architecture, ZZ sleep mode timing (tZZREC = 2tCYC), and 100-pin TQFP package mechanical fit for legacy board layouts.

Technical Context

The CY7C1339G-133AXI implements a two-bit on-chip wraparound burst counter fed by A1/A0, enabling four-word bursts with programmable order via the MODE pin. All synchronous inputs-including address, CE1/CE2/CE3, ADSP/ADSC, ADV, BW[A:D], BWE, and GW-are registered on the rising edge of CLK.

It supports dual-address-strobe initiation (ADSP for two-cycle writes, ADSC for single-cycle writes), asynchronous OE and ZZ controls, and synchronous self-timed writes with byte-write granularity controlled by BWE + BW[A:D]. Output drivers are registered and JEDEC JESD8-5 compliant for 2.5V/3.3V I/O interfacing.

Key Specifications

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), lead-free, 14 mm × 14 mm body, 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with IS61LV12832AL-133TQLI and AS7C312832B-133BIN, the CY7C1339G-133AXI uniquely combines programmable burst order, dual-voltage I/O, and guaranteed data-retentive sleep-making it the sole option for legacy Pentium®-based systems needing power-aware caching.

Availability

CY7C1339G-133AXI is available at Aetrix Electronics and suitable for Intel Pentium®-based industrial PCs, real-time motion controllers, telecom line card buffers, and avionics data acquisition modules requiring stable component supply and long-lifecycle support.

Supply support for CY7C1339G-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1339G belongs to Cypress's legacy synchronous SRAM product line, designed specifically for deterministic, low-latency cache and buffer applications in x86 and real-time embedded systems requiring burst-mode efficiency and robust timing predictability.

FAQ

What burst modes does CY7C1339G-133AXI support, and how is selection implemented?

The device supports both interleaved (Pentium®-compatible) and linear burst sequences. Selection is performed via the MODE pin: tying MODE to GND selects linear mode; connecting it to VDD or leaving it floating selects interleaved mode. This is a static configuration-MODE must remain stable during operation and is sampled only at power-up or reset.

How does the ZZ sleep mode function, and what timing constraints apply?

Asserting ZZ HIGH places the device in snooze mode, reducing standby current to 40 mA while preserving memory contents. Entry and exit each require two full clock cycles (tZZS = tZZREC = 2tCYC). The device must be fully deselected (CE1/CE2/CE3 inactive) before asserting ZZ, and CE/ADSP/ADSC must remain inactive for tZZREC after ZZ returns LOW.

Can CY7C1339G-133AXI perform byte writes and full-word writes in the same access cycle?

No-byte writes and global writes are mutually exclusive per access cycle. When GW is LOW, all four bytes (DQA–DQD) are written regardless of BW[A:D] states. When GW is HIGH, byte writes are enabled only if BWE is LOW and at least one BW[A:D] is LOW. The device does not support simultaneous partial and full writes in one cycle.

What is the functional difference between ADSP and ADSC address strobes?

ADSP initiates processor-style two-cycle writes: address latched on first CLK, data written on second CLK. ADSC enables controller-style single-cycle writes: address and data latched and written in one CLK cycle. ADSP takes priority-if both ADSP and ADSC are active, only ADSP is recognized. ADSP is ignored if CE1 is HIGH.