Infineon Technologies CY7C1339G-133AXIT

Overview

CY7C1339G-133AXIT from Cypress Semiconductor is a 4-Mbit (128K × 32) pipelined synchronous SRAM with registered I/O, 133-MHz operation, 4.0 ns clock-to-output delay, 3.3V core / 2.5V–3.3V I/O supply support, and user-selectable Intel Pentium®-compatible interleaved or linear burst mode. It serves as high-speed secondary cache in embedded processors requiring deterministic burst access timing.

For engineers reviewing the CY7C1339G-133AXIT datasheet, CY7C1339G-133AXIT pinout, CY7C1339G-133AXIT application, or CY7C1339G-133AXIT equivalent, key selection criteria include synchronous burst control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWD + BWE), ZZ sleep mode entry/exit timing, and TQFP-100 package compatibility with JEDEC JESD8-5 I/O voltage levels.

Technical Context

The CY7C1339G-133AXIT implements a two-bit on-chip wraparound burst counter fed by A1/A0, enabling four-word burst sequences synchronized to CLK rising edges. Burst order-interleaved (MODE = VDD/floating) or linear (MODE = GND)-is statically selected and remains fixed during operation.

All synchronous inputs (address, CE1/CE2/CE3, ADSP/ADSC/ADV, GW/BWE/BWA–BWD) are registered on CLK rising edge; asynchronous OE and ZZ control output enable and sleep state independently of clock. Write cycles use on-chip self-timed logic, supporting single-cycle ADSC-triggered or two-cycle ADSP-triggered writes with byte-level selectivity.

Key Specifications

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), lead-free, JEDEC MO-140AC compliant, body size 14 mm × 14 mm, 0.5 mm lead pitch, thermal pad on underside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IS61WV12832ALL-133BLI and CY7C1339G-133AXC, the CY7C1339G-133AXIT uniquely delivers dual-voltage I/O, hardware sleep mode, and industrial temperature rating in a single 100-pin TQFP package-enabling robust, power-aware burst memory subsystems where voltage translation and thermal resilience are mandatory.

Availability

CY7C1339G-133AXIT is available at Aetrix Electronics and suitable for Intel Pentium®-based industrial PCs, real-time motion control systems, and medical imaging equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1339G-133AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, with headquarters in San Jose, CA and global R&D centers.

The CY7C1339G belongs to Cypress's pipelined synchronous SRAM product line, engineered specifically for deterministic burst-access applications in processor cache, networking, and real-time control subsystems where clock-aligned timing and low-latency power management are critical.

FAQ

What is the function of the MODE pin, and how must it be connected?

The MODE pin selects burst sequence type: tied to GND for linear burst (00→01→10→11), or left floating/tied to VDD for interleaved burst (00→01→10→11 → 01→00→11→10). It is a static strap pin-must be fixed before operation and cannot be changed dynamically. Internal pull-up ensures safe default (interleaved) if left unconnected.

Can CY7C1339G-133AXIT operate with VDDQ = 2.5 V while VDD = 3.3 V?

Yes. The device is explicitly designed for split-rail operation: VDD = 3.3 V ± 0.3 V powers the core logic and memory array, while VDDQ = 2.5 V or 3.3 V powers only the I/O buffers. This allows direct interfacing to 2.5 V processors without level shifters, with all I/O pins compliant to JEDEC JESD8-5 voltage thresholds.

How does the ZZ sleep mode interact with ongoing memory accesses?

ZZ is asynchronous and takes effect after two clock cycles. Any access initiated before ZZ assertion completes normally, but new accesses started during ZZ assertion are invalid and not guaranteed to complete. The device must be fully deselected (CE1/CE2/CE3 inactive, ADSP/ADSC deasserted) before asserting ZZ, and tZZREC (≥2 clock cycles) must elapse after ZZ deassertion before resuming valid accesses.

What is the difference between ADSP and ADSC, and when should each be used?

ADSP (Address Strobe Processor) initiates two-cycle writes and supports processor-driven burst sequences; ADSC (Address Strobe Controller) enables single-cycle writes ideal for FPGA or ASIC controllers managing burst timing externally. ADSP is ignored if CE1 is HIGH; ADSC has no such dependency. Use ADSP for CPU-cache coupling, ADSC for tightly controlled logic-based memory management.