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Infineon Technologies CY7C13451G-100BZXE

Part No.:
CY7C13451G-100BZXE
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C13451G-100BZXE.pdf
Description:
IC SRAM 4MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,716

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Product details

Overview

CY7C13451G-100BZXE from Cypress Semiconductor is a 4-Mbit (128K × 36) flow-through synchronous SRAM with 3.3 V core supply, 2.5/3.3 V I/O supply, and 8.0 ns clock-to-output delay at 100 MHz. It features synchronous burst addressing (linear or interleaved), separate ADSP/ADSC strobes, and ZZ sleep mode. Designed for secondary cache in high-speed microprocessor systems requiring deterministic timing and low-latency data access.

For engineers reviewing the CY7C13451G-100BZXE datasheet, CY7C13451G-100BZXE pinout, CY7C13451G-100BZXE application, or CY7C13451G-100BZXE equivalent, key selection criteria include burst sequence control via MODE pin, synchronous self-timed write architecture, JEDEC JESD8-5 I/O compatibility, and FBGA-165 package integration in space-constrained cache subsystems.

Technical Context

The device implements a 2-bit on-chip wrap-around burst counter fed by A[1:0], enabling automatic address increment during burst reads/writes. Burst order-linear or interleaved-is statically selected by the MODE pin (LOW = linear, HIGH = interleaved), supporting Pentium/i486™-compatible systems.

All synchronous inputs (address, CE1/CE2/CE3, ADSP/ADSC, ADV, BWx, BWE, GW, CLK) are registered on the rising edge of CLK. Asynchronous OE and ZZ inputs bypass clock registration: OE controls output tristate independently of clock phase, while ZZ enables non-time-critical sleep with data retention when driven HIGH (though errata requires external grounding of Ball H11).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (128K × 36 bits), enabling full-word cache line storage for 32-bit+ bus architectures.
Access Time (tCO) 8.0 ns max at 100 MHz clock, guaranteeing deterministic read latency for tight-timing cache interfaces.
Core Supply (VDD) 3.3 V ±0.3 V, compatible with standard LVTTL/LVCMOS core domains and simplifying power rail design.
I/O Supply (VDDQ) 2.5 V or 3.3 V selectable, allowing interoperability with mixed-voltage memory controllers and processors.
Burst Support Intel Pentium interleaved or linear sequences, controlled by static MODE pin-no runtime reconfiguration required.
Write Architecture Synchronous self-timed write with global (GW) and byte-select (BWx + BWE) modes, eliminating external write pulse generation.
Package 165-ball FBGA (13 mm × 15 mm, 1.0 mm pitch), optimized for high-density PCB layouts in embedded computing modules.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), RoHS-compliant, 13 mm × 15 mm footprint, 1.0 mm ball pitch, bottom-side thermal pad not electrically connected.

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Rising-edge-triggered master timing reference for all registered inputs and burst counter advancement.
ADSP / ADSC Address strobe inputs Separate processor (ADSP) and controller (ADSC) strobes enable dual-bus cache coherency without arbitration logic.
ADV Burst advance control Asserted LOW on CLK rise to increment internal burst counter-enables precise burst depth control per access.
MODE Burst sequence selector Static strap pin: GND = linear burst (sequential addresses), VDD/floating = interleaved (Pentium-compatible pattern).
ZZ Asynchronous sleep enable Active-HIGH sleep input (errata requires external grounding at Ball H11 to prevent unintended entry into low-power state).
OE Asynchronous output enable Tristates DQ/DQP pins immediately on assertion-decouples output timing from clock domain for flexible bus sharing.
BWA–BWD, BWE, GW Byte/global write controls Four independent byte-write enables (BWA–BWD) qualified by BWE; GW overrides all for full-word writes.

Key Features

Feature Design Value
Flow-through synchronous architecture Eliminates pipeline stalls by delivering data on same clock cycle as address capture-critical for zero-wait-state cache operation.
Dual-address strobe support (ADSP/ADSC) Enables seamless integration with both CPU and cache controller buses without glue logic or multiplexing.
JEDEC JESD8-5 I/O compatibility Ensures signal integrity and voltage-level interoperability with industry-standard 2.5 V/3.3 V memory controllers and FPGAs.
Synchronous self-timed write Internally generates precise write pulse duration-removes need for external write timing generators or delay circuits.
ZZ sleep mode with data retention Reduces standby current to ≤60 mA while preserving memory contents-supports low-power system suspend states.

Applications

Intel Pentium-Based Cache Subsystem Embedded RISC Processor Cache

Use Scenario: Secondary cache for Intel Pentium-class CPUs operating at 100 MHz bus frequency.

IC Role / Device Role / Timing Role: Flow-through synchronous SRAM providing burst-mode instruction/data caching with interleaved address sequencing.

Use Value: 8.0 ns tCO meets Pentium's strict cache timing budget; ADSP/ADSC separation supports CPU/cache controller handshaking without added logic.

Use Scenario: On-board L2 cache for ARM9 or MIPS-based industrial controllers with limited board area.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory buffer interfacing directly to processor AXI/AHB bus via synchronous burst protocol.

Use Value: 165-ball FBGA enables compact layout; VDDQ flexibility allows direct connection to 2.5 V I/O rails common in legacy RISC SoCs.

Network Packet Buffering Real-Time DSP Data Exchange

Use Scenario: Temporary packet storage in Gigabit Ethernet switch ASICs requiring deterministic read/write latency.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as dual-port-accessible FIFO buffer between MAC and switching fabric.

Use Value: Self-timed write and asynchronous OE allow concurrent read/write operations across independent bus cycles-improving throughput under bursty traffic.

Use Scenario: Shared memory between DSP core and FPGA co-processor in radar signal processing modules.

IC Role / Device Role / Timing Role: Common-I/O SRAM serving as low-jitter data exchange buffer with synchronized burst transfers.

Use Value: Linear burst mode (MODE = GND) delivers contiguous sample blocks; 36-bit width matches typical DSP word size for efficient FFT/FFT windowing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous cache SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV12836BLL-10BLI 10 ns tCO, 3.3 V only VDDQ, no ZZ pin, 165-ball TFBGA (same footprint but different ball map) Lacks burst mode selection and ADSP/ADSC separation-requires external address sequencing logic Preferred where simpler timing and lower cost outweigh burst flexibility and dual-strobe capability.
MT55LCS25636A-100:J 100 MHz, 8 ns tCO, 1.8 V VDDQ option, no MODE pin-fixed linear burst only No interleaved burst support; lacks ZZ sleep; uses different CE logic (single active-high CE) Selected when migrating to newer low-voltage platforms and linear-only burst suffices for target processor.

Compared with IS61WV12836BLL-10BLI and MT55LCS25636A-100:J, the CY7C13451G-100BZXE uniquely supports both Pentium interleaved and linear bursts via MODE pin, retains data in ZZ sleep, and provides dedicated ADSP/ADSC strobes-making it irreplaceable in legacy x86 cache designs requiring hardware-level burst compatibility.

Availability

CY7C13451G-100BZXE is available at Aetrix Electronics and suitable for Intel Pentium-based cache subsystems, embedded RISC processor caches, and network packet buffering applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C13451G-100BZXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, PSoC, USB, and programmable solutions for industrial, automotive, and consumer electronics.

The CY7C13451G belongs to Cypress's high-performance synchronous SRAM product line, engineered specifically for secondary cache applications in x86 and RISC microprocessor systems demanding sub-10 ns access and deterministic burst behavior.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst sequence type: tied to GND for linear burst (sequential addresses), or to VDD/floating for interleaved burst (Pentium-compatible pattern). It is a static strap pin-must remain stable during operation and cannot be toggled dynamically. Internal pull-up ensures default interleaved behavior if left unconnected.

Why does the datasheet require external grounding of the ZZ pin despite its "active-HIGH" specification?

An erratum (Document #001-88572 Rev. *G, page 21) mandates external grounding of Ball H11 (ZZ pin) because the internal pull-down is insufficient to prevent spurious wake-up or metastability. Leaving ZZ floating or driving it HIGH risks unintended exit from sleep mode or functional instability-grounding ensures reliable low-power operation.

How does the CY7C13451G handle simultaneous ADSP and ADSC assertion?

When both ADSP and ADSC are asserted LOW, the device prioritizes ADSP and ignores ADSC. This hierarchy ensures deterministic address capture in systems where both processor and controller may attempt access-eliminating race conditions without external arbitration logic.

Can the CY7C13451G operate with mixed VDD (3.3 V) and VDDQ (2.5 V) supplies in the same system?

Yes-VDD must be 3.3 V ±0.3 V for core logic, while VDDQ can be independently set to either 2.5 V or 3.3 V to match the I/O voltage of the connected controller. This dual-supply architecture enables interoperability with legacy 2.5 V processors and modern 3.3 V FPGAs without level shifters.

CY7C13451G-100BZXE Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C13451G-100BZXE FAQ

1.How can I place an order for CY7C13451G-100BZXE through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C13451G-100BZXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C13451G-100BZXE reliable?

The price and inventory of CY7C13451G-100BZXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C13451G-100BZXE is usually 5 days.

3.What payment methods are accepted for CY7C13451G-100BZXE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C13451G-100BZXE transactions.

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CY7C13451G-100BZXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C13451G-100BZXE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C13451G-100BZXE?

For technical support, including CY7C13451G-100BZXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C13451G-100BZXE requirements.

6.How does Aetrix verify that CY7C13451G-100BZXE is sourced from the original manufacturer or authorized distributors?

All CY7C13451G-100BZXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C13451G-100BZXE meets industry standards.

7.What is the process for return or replacement of CY7C13451G-100BZXE?

All CY7C13451G-100BZXE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C13451G-100BZXE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C13451G-100BZXE part is unused and in its original packaging.

Return procedure for CY7C13451G-100BZXE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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