Infineon Technologies CY7C13451G-100BZXET

Overview

CY7C13451G-100BZXET from Cypress Semiconductor is a 4-Mbit (128K × 36) flow-through synchronous SRAM with 3.3 V core and 2.5/3.3 V I/O supplies, 8.0 ns clock-to-output delay at 100 MHz, user-selectable linear or interleaved burst mode, and synchronous self-timed write. It serves as secondary cache memory for high-speed microprocessors including Intel Pentium-class systems requiring deterministic burst access timing and low-latency data path control.

For engineers reviewing the CY7C13451G-100BZXET datasheet, CY7C13451G-100BZXET pinout, CY7C13451G-100BZXET application, or CY7C13451G-100BZXET equivalent, key selection considerations include burst sequence configuration (MODE pin), synchronous address strobe handling (ADSP/ADSC), byte-write granularity (BWx/BWE), ZZ sleep mode implementation, and FBGA-165 thermal/power layout constraints.

Technical Context

The device implements a 2-bit on-chip wrap-around burst counter fed by A[1:0], synchronized to CLK rising edge, and controlled by ADV to generate sequential addresses during burst reads/writes. Burst order-linear or interleaved-is statically selected via MODE pin level and remains fixed during operation.

All synchronous inputs (address, CE1/CE2/CE3, ADSP/ADSC, BWx, BWE, GW, CLK) are registered on CLK rising edge; asynchronous OE and ZZ operate independently of clock. Output enable is masked during first read cycle after deselection, and ZZ sleep requires external grounding per errata (Ball H11).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm, 0.8 mm pitch, RoHS-compliant, lead-free (BZXET suffix). Thermal pad exposed on underside for enhanced heat dissipation in high-density cache modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous cache SRAM applications.

Compared with IS61WV12836BLL-10TLI and MT48LC16M32B2-75:G, the CY7C13451G-100BZXET uniquely delivers guaranteed 8.0 ns flow-through timing, hardware-configurable burst order, and self-timed write - making it optimal for latency-critical cache subsystems where timing predictability and minimal glue logic are mandatory.

Availability

CY7C13451G-100BZXET is available at Aetrix Electronics and suitable for Intel Pentium-class CPU cache modules, high-performance network processor buffers, and industrial motion controller look-up tables requiring stable component supply, long-lifecycle availability, and Pb-free compliance.

Supply support for CY7C13451G-100BZXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, with expertise in synchronous SRAM, NOR flash, and PSoC architectures.

The CY7C13451G belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic, low-latency cache applications in CPU, networking, and real-time control systems.

FAQ

What is the correct connection for the ZZ pin on CY7C13451G-100BZXET?

The ZZ pin (Ball H11) must be externally connected to ground per documented errata in Rev. *G datasheet (page 21). Although labeled as an active-HIGH sleep input with internal pull-down, unconnected or floating ZZ causes undefined behavior. Grounding ensures reliable operation and preserves data integrity during normal use.

How does the MODE pin affect burst addressing in CY7C13451G-100BZXET?

The MODE pin statically selects burst order: HIGH enables interleaved addressing (e.g., 0→2→4→6 for A[1:0] = 00), matching Intel Pentium protocols; LOW enables linear addressing (0→1→2→3). It is sampled only at power-up or reset and must remain static during operation due to internal pull-up and lack of dynamic reconfiguration.

Can CY7C13451G-100BZXET operate with 2.5 V I/O while using 3.3 V core supply?

Yes. The device supports independent VDD (3.3 V ± 0.3 V) and VDDQ (2.5 V or 3.3 V) supplies. Using 2.5 V on VDDQ enables direct interface with SSTL-2 or LVTTL-2.5 V logic families, while maintaining full 3.3 V core performance - verified in AC electrical characteristics tables (tCO, setup/hold times).

What is the functional difference between ADSP and ADSC inputs?

ADSP (Address Strobe Processor) and ADSC (Address Strobe Controller) are priority-ranked synchronous address capture signals: ADSP takes precedence when both are asserted. ADSP is used for CPU-initiated accesses; ADSC for cache controller or DMA-initiated bursts. CE1 must be active for either to register addresses, and ADSP is ignored if CE1 is deasserted.