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Infineon Technologies CY7C1345G-100AXC

Part No.:
CY7C1345G-100AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1345G-100AXC.pdf
Description:
IC SRAM 4.5MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,986

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Product details

Overview

CY7C1345G-100AXC from Cypress Semiconductor is a 4-Mbit (128K × 36) flow-through synchronous SRAM with 3.3 V core supply, 2.5/3.3 V I/O supply, and 8.0 ns clock-to-output delay at 100 MHz. It features user-selectable Intel Pentium–compatible interleaved or linear burst sequences, synchronous self-timed write, and asynchronous output enable. Designed for secondary cache in high-speed microprocessor systems requiring deterministic timing and low-glue interfacing.

For engineers reviewing the CY7C1345G-100AXC datasheet, CY7C1345G-100AXC pinout, CY7C1345G-100AXC application, or CY7C1345G-100AXC equivalent, key selection criteria include burst mode control via MODE pin, dual address strobes (ADSP/ADSC), byte-write granularity with BWA–BWD, ZZ sleep mode implementation, and TQFP-100 package compatibility with JEDEC JESD8-5 I/O standards.

Technical Context

The CY7C1345G-100AXC implements a synchronous, flow-through architecture where all address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK. Its 2-bit on-chip wrap-around burst counter captures A[1:0] at burst initiation and auto-increments for subsequent accesses, supporting both interleaved (MODE = HIGH) and linear (MODE = LOW) sequences per Intel Pentium and i486™ conventions.

Burst operations are triggered by ADSP (processor strobe) or ADSC (controller strobe), with ADV controlling address advancement. Write operations use synchronous self-timed logic: global write (GW) overrides byte-write enables (BWE + BWA–BWD), while OE provides asynchronous tristate control of bidirectional DQ/DQP I/Os. Core operates at 3.3 V (VDD), I/O at 2.5 V or 3.3 V (VDDQ), with ZZ enabling non-time-critical sleep with data retention.

Key Specifications

ParameterValue and Actual Design Meaning
Memory density4 Mbit (128K × 36), enabling full 36-bit cache line storage without external width expansion
Access time (tCO)8.0 ns max at 100 MHz - guarantees deterministic read latency from CLK rise to valid DQ output
Burst supportIntel Pentium–compatible interleaved or linear sequences selected by static MODE pin - eliminates external burst logic
Power suppliesVDD = 3.3 V ±0.3 V (core); VDDQ = 2.5 V or 3.3 V (I/O) - supports mixed-voltage system integration
Write controlSynchronous self-timed write with GW override and four independent byte-write enables (BWA–BWD) - enables precise 8-bit sub-word updates
Timing interfaceADSP/ADSC dual address strobes + ADV-controlled increment - decouples processor and controller address management
Output controlAsynchronous OE + synchronous ZZ (active-HIGH sleep) - allows dynamic output disable and low-power standby without clock gating

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, lead-free (Pb-free) compliant.

Pin/TerminalCircuit RoleDesign Meaning
A[1:0]Synchronous address inputLatched on CLK rise when ADSP/ADSC active; feeds 2-bit burst counter for automatic address generation
ADSP / ADSCSynchronous address strobe (processor / controller)Triggers address latching and burst initiation; ADSP takes priority when both asserted
ADVSynchronous advance controlAsserted on CLK rise to increment burst counter - controls sequential address progression within burst
MODEStatic burst order selectLOW = linear burst; HIGH = interleaved burst; internal pull-up requires explicit GND tie for linear mode
ZZAsynchronous sleep enableActive-HIGH; must be externally tied to GND per errata (Page 22) - floating or HIGH causes functional failure
DQ[A:D], DQP[A:D]Bidirectional data I/O (36-bit)Common I/O bus with OE-controlled direction; DQP pins provide parity support per byte group
BWA–BWD, BWESynchronous byte write controlsBWA–BWD select DQA–DQD bytes; BWE enables byte write - combined with GW for full-word override
CE1–CE3Synchronous chip enablesThree-level decode (CE1 active-LOW, CE2 active-HIGH, CE3 active-LOW) - enables multi-bank memory expansion

Key Features

FeatureDesign Value
Flow-through synchronous architectureEliminates pipeline stalls by delivering data on same clock cycle as address capture - critical for cache hit latency
User-selectable burst sequenceHardware-mode pin (MODE) configures Intel-compatible interleaved or linear addressing - no firmware overhead
Separate ADSP and ADSC inputsEnables concurrent processor and cache controller access arbitration without external glue logic
Synchronous self-timed writeInternal timing circuitry ensures reliable write completion across voltage/temperature - removes external write-strobe generation
JEDEC JESD8-5 I/O compatibilityGuarantees interoperability with 2.5 V and 3.3 V logic families - simplifies mixed-voltage board design

Applications

Processor Cache InterfaceMulti-Processor Shared Memory

Use Scenario: Secondary cache for Intel Pentium-class CPUs operating at 100 MHz bus frequency.

IC Role / Device Role / Timing Role: Flow-through SRAM providing deterministic 8.0 ns tCO read access and burst-aligned data delivery to match CPU prefetch behavior.

Use Value: Eliminates wait states during cache hits by aligning burst sequence (interleaved mode) and clock-to-output timing with Pentium bus protocol.

Use Scenario: Shared memory buffer between two ARM9-based controllers in industrial motion control PLCs.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as coherency-managed data exchange point with ADSP/ADSC arbitration for dual-master access.

Use Value: Enables deterministic latency for inter-processor messaging using separate address strobes and synchronous write validation.

Network Packet BufferReal-Time DSP Data Cache

Use Scenario: Line-rate packet buffering in Gigabit Ethernet switch ASIC companion memory.

IC Role / Device Role / Timing Role: High-bandwidth 36-bit wide SRAM storing ingress/egress packet headers with burst-sequential access.

Use Value: 100 MHz operation and linear burst mode (MODE = LOW) deliver sustained 3.6 Gbps throughput for header processing pipelines.

Use Scenario: Low-latency coefficient/data cache for TI C64x+ DSP executing real-time FFT algorithms.

IC Role / Device Role / Timing Role: Deterministic-access SRAM supplying 36-bit-wide operands to dual MAC units with zero-cycle stall on cache hits.

Use Value: 8.0 ns tCO and synchronous self-timed writes ensure predictable execution timing critical for hard real-time loop bounds.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous cache SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV12836BLL-10TLI10 ns tCO (slower), 3.3 V only I/O (no 2.5 V option), no ZZ sleep pinLacks asynchronous sleep mode and dual-voltage I/O - unsuitable for power-constrained or mixed-voltage designsSelect when cost sensitivity outweighs timing/power requirements and system uses only 3.3 V I/O
MT55LSD12836D-100:GSame 8.0 ns tCO and 100 MHz rating, but uses DDR interface and requires DLL calibrationDDR timing complexity increases PCB layout and initialization firmware burden - not drop-in compatibleSelect only when migrating to higher-density DDR SRAM and redesigning clocking/control logic

Compared with IS61WV12836BLL-10TLI and MT55LSD12836D-100:G, the CY7C1345G-100AXC uniquely combines sub-10 ns deterministic access, dual-voltage I/O flexibility, hardware-configurable burst mode, and asynchronous sleep - making it optimal for legacy x86 cache and deterministic embedded systems where timing predictability and low integration overhead are mandatory.

Availability

CY7C1345G-100AXC is available at Aetrix Electronics and suitable for high-speed microprocessor cache interfaces, industrial multi-processor shared memory systems, network packet buffering, and real-time DSP data caching requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1345G-100AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The CY7C1345G belongs to Cypress's legacy synchronous SRAM product line, engineered specifically for deterministic, low-latency secondary cache applications in x86 and embedded microprocessor systems requiring flow-through timing and minimal interface logic.

FAQ

What is the correct configuration for the MODE pin to enable linear burst mode?

The MODE pin must be statically tied to ground (GND) to select linear burst mode. It features an internal pull-up resistor, so leaving it floating defaults to interleaved mode. This configuration must remain stable during device operation - dynamic switching is not supported and may cause undefined burst behavior per the functional description on page 7.

Why must the ZZ pin be externally connected to ground despite being labeled 'active-HIGH'?

Per Errata on page 22 of the official datasheet (Document Number: 38-05517 Rev. *P), the ZZ pin (Pin 64) exhibits silicon-level instability when left floating or driven HIGH. Cypress mandates external grounding to ensure reliable operation and prevent unintended sleep entry or functional failure - this is a documented hardware revision requirement, not a design recommendation.

How does the CY7C1345G-100AXC handle simultaneous ADSP and ADSC assertion?

When both ADSP and ADSC are asserted LOW, the device prioritizes ADSP and ignores ADSC. This hierarchy is explicitly defined in the Pin Definitions (page 5) and Functional Overview (page 7). The address latching, burst counter loading, and subsequent access sequencing follow ADSP-triggered timing - ADSC remains inactive until ADSP is deasserted.

Can BWA–BWD be used independently of BWE for byte write operations?

No. Byte write operations require both BWE asserted LOW and exactly one of BWA–BWD asserted LOW. The truth table on page 10 confirms that BWE is the master enable: if BWE is HIGH, all byte write selects are masked regardless of BWA–BWD state. This two-level qualification prevents partial writes and ensures data integrity during multi-byte transfers.

CY7C1345G-100AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8 ns
Voltage - Supply:
3.15V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1345G-100AXC FAQ

1.How can I place an order for CY7C1345G-100AXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1345G-100AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1345G-100AXC reliable?

The price and inventory of CY7C1345G-100AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1345G-100AXC is usually 5 days.

3.What payment methods are accepted for CY7C1345G-100AXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1345G-100AXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1345G-100AXC?

CY7C1345G-100AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1345G-100AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1345G-100AXC?

For technical support, including CY7C1345G-100AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1345G-100AXC requirements.

6.How does Aetrix verify that CY7C1345G-100AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1345G-100AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1345G-100AXC meets industry standards.

7.What is the process for return or replacement of CY7C1345G-100AXC?

All CY7C1345G-100AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1345G-100AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1345G-100AXC part is unused and in its original packaging.

Return procedure for CY7C1345G-100AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1345G-100AXC Tags

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