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Infineon Technologies CY7C1345G-100AXCT

Part No.:
CY7C1345G-100AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1345G-100AXCT.pdf
Description:
IC SRAM 4.5MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,433

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Product details

Overview

CY7C1345G-100AXCT from Cypress Semiconductor is a 4-Mbit (128K × 36) flow-through synchronous SRAM with 3.3 V core supply, 2.5/3.3 V I/O supply, and 8.0 ns clock-to-output delay at 100 MHz. It supports Intel Pentium–compatible interleaved or linear burst sequences via MODE pin selection, features synchronous self-timed write, asynchronous OE, and ZZ sleep mode, and is used in high-speed CPU cache subsystems requiring deterministic timing and low-latency burst access.

For engineers reviewing the CY7C1345G-100AXCT datasheet, CY7C1345G-100AXCT pinout, CY7C1345G-100AXCT application, or CY7C1345G-100AXCT equivalent, key selection criteria include burst sequence control (MODE), dual address strobes (ADSP/ADSC), byte-write granularity (BWA–BWD + BWE), synchronous clocked interface (CLK), and TQFP-100 package compatibility with JEDEC JESD8-5 I/O standards.

Technical Context

The CY7C1345G-100AXCT implements a synchronous flow-through architecture where all address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK. Its 2-bit on-chip burst counter captures A[1:0] at ADSP/ADSC assertion and auto-increments for subsequent burst cycles, supporting both interleaved (Pentium-compatible) and linear sequences selected statically by the MODE pin.

Burst initiation is decoupled between processor (ADSP) and controller (ADSC) paths, with priority given to ADSP when both are active. Write operations use synchronous self-timed logic: global writes (GW) override byte-selects (BWA–BWD), while byte writes require simultaneous assertion of BWE and one BWx signal. Output enable (OE) operates asynchronously to tristate DQ/DQP pins independently of clock timing.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4 Mbit (128K × 36 bits), enabling full 36-bit wide cache line storage per access
Access Time (tCO)8.0 ns max from CLK rise, guaranteeing deterministic read latency for 100 MHz system clocks
Core Supply (VDD)3.3 V ± 0.3 V, defining minimum power rail stability for internal array and logic operation
I/O Supply (VDDQ)2.5 V or 3.3 V selectable, allowing direct interfacing with either 2.5 V or 3.3 V processor buses
Burst SupportIntel Pentium–interleaved or linear sequences, controlled by static MODE pin level during boot
Write ArchitectureSynchronous self-timed write with GW override and four independent byte-write enables (BWA–BWD)
Package100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant Pb-free with standard JEDEC footprint

Pinout & Package

Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm), Pb-free, JEDEC MO-145 compliant.

Pin/TerminalCircuit RoleDesign Meaning
CLKClock inputRising-edge-triggered master clock synchronizing all register inputs (address, control, data)
ADSP / ADSCAddress strobe inputsSeparate processor (ADSP) and controller (ADSC) strobes-ADSP takes precedence when both asserted
ADVBurst advance controlAsserted on CLK rise to increment internal 2-bit burst counter for next address in sequence
MODEBurst order selectStatic strap pin: LOW = linear burst, HIGH/floating = interleaved (Pentium-compatible)
ZZAsynchronous sleep inputActive-HIGH sleep mode; errata requires external grounding (Pin 64) for reliable operation
BWA–BWD, BWEByte write controlsFour independent byte masks (A–D) qualified by BWE; enables partial-word writes without bus contention
DQ[A:D], DQP[A:D]Common I/O data bus36-bit bidirectional data path (four 9-bit bytes); direction controlled by asynchronous OE
CE1, CE2, CE3Chip enable groupThree synchronous enables for depth expansion; CE1 must be LOW for ADSP/ADSC to take effect

Key Features

FeatureDesign Value
Flow-through synchronous architectureEliminates pipeline stalls by delivering data on same clock cycle as address capture-no wait states required
User-selectable burst sequenceMODE pin configures interleaved (Pentium/i486) or linear addressing without firmware change
Separate ADSP and ADSC strobesEnables coexistence of CPU and cache controller in split-bus architectures with priority arbitration
Synchronous self-timed writeRemoves external write timing constraints-internal logic handles setup/hold and write pulse duration
Asynchronous output enable (OE)Allows immediate tristating of DQ/DQP pins independent of CLK, critical for bus sharing and hot-swap scenarios

Applications

Processor Cache InterfaceMulti-Controller Memory Hub

Use Scenario: High-speed L2 cache for Intel Pentium-class microprocessors operating at 100 MHz bus frequency.

IC Role / Device Role / Timing Role: Flow-through SRAM acting as synchronous burst-access memory buffer with zero-wait-state reads and deterministic tCO ≤ 8.0 ns.

Use Value: Enables full 36-bit cache line fills in four consecutive 100 MHz clock cycles using interleaved burst addressing, matching Pentium bus protocol timing.

Use Scenario: Shared memory resource in embedded systems with separate CPU and DMA controller accessing same SRAM bank.

IC Role / Device Role / Timing Role: Dual-strobe (ADSP/ADSC) SRAM allowing independent address capture and burst initiation from two asynchronous masters.

Use Value: Eliminates external arbitration logic-ADSP and ADSC provide hardware-isolated address latching paths with built-in priority resolution.

Configurable Burst Memory SubsystemLow-Power Embedded Cache

Use Scenario: Field-upgradable cache in industrial controllers where burst behavior must adapt to different host processors.

IC Role / Device Role / Timing Role: Mode-strapped SRAM supporting runtime-switchable burst ordering via external MODE pin configuration.

Use Value: Single BOM supports both i486 (interleaved) and custom RISC (linear) burst protocols without hardware redesign.

Use Scenario: Power-sensitive network appliance requiring cache retention during idle periods without clock gating.

IC Role / Device Role / Timing Role: Asynchronous ZZ sleep mode preserving data integrity while reducing standby current to 40 mA.

Use Value: External grounding of ZZ (Pin 64) ensures stable deep-sleep entry-critical for meeting 10-year data retention specs in unpowered states.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous cache SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV51236L-100TQLI512K × 36 organization, 3.3 V only VDDQ, no ZZ sleep mode, 100-pin TQFPLacks asynchronous sleep and dual address strobes; requires external burst control logicSelect when lower density suffices and sleep mode is unnecessary
AS7C3256A-10TCN256K × 36 organization, 3.3 V core/I/O, no MODE-selectable burst, 100-pin TQFPFixed linear burst only; no ADSC support; higher tCO (10 ns)Select for cost-sensitive designs where Pentium compatibility is not required

Compared with IS61LV51236L-100TQLI and AS7C3256A-10TCN, the CY7C1345G-100AXCT uniquely delivers configurable burst sequencing, dual-address-strobe arbitration, and guaranteed 8.0 ns tCO-making it the only option for legacy x86 cache subsystems requiring Pentium-level timing compliance and hardware-controlled sleep.

Availability

CY7C1345G-100AXCT is available at Aetrix Electronics and suitable for high-speed CPU cache interfaces, multi-controller memory hubs, configurable burst memory subsystems, and low-power embedded cache applications requiring stable component supply across extended production lifecycles.

Supply support for CY7C1345G-100AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The CY7C1345G belongs to Cypress's legacy synchronous SRAM product line, designed specifically for second-level CPU cache applications requiring deterministic burst timing, dual-master interface support, and JEDEC-compliant 3.3 V/2.5 V mixed-voltage operation.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst address order: LOW enables linear burst, HIGH or floating enables interleaved (Pentium-compatible) burst. It is a static strap pin-must be set before device initialization and held stable during operation. Internal pull-up ensures default interleaved behavior if left unconnected, but external pull-down is required for linear mode.

Why does the datasheet require external grounding of the ZZ pin (Pin 64)?

Due to a documented silicon errata (Rev. *P, page 22), the ZZ pin exhibits unreliable sleep-mode entry unless externally tied to ground. Though the pin has an internal pull-down, noise sensitivity and threshold variation necessitate hard grounding to ensure deterministic ZZ sleep activation and data retention during low-power states.

How does the CY7C1345G-100AXCT handle simultaneous ADSP and ADSC assertion?

When both ADSP and ADSC are asserted LOW, the device recognizes only ADSP-the processor strobe takes strict priority. ADSC is ignored in this condition, ensuring cache coherency in systems where CPU and controller may momentarily overlap address strobes during state transitions or error recovery.

Can the CY7C1345G-100AXCT operate with 2.5 V I/O while maintaining 3.3 V core voltage?

Yes-VDDQ (pins 13, 22, 31, 40, 49, 58, 67, 76, 85, 94) accepts 2.5 V ± 0.2 V independently of VDD (3.3 V ± 0.3 V). This allows direct interfacing with 2.5 V processor buses while preserving full 3.3 V core performance, including 8.0 ns tCO and 205 mA max operating current.

CY7C1345G-100AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8 ns
Voltage - Supply:
3.15V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1345G-100AXCT FAQ

1.How can I place an order for CY7C1345G-100AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1345G-100AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1345G-100AXCT reliable?

The price and inventory of CY7C1345G-100AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1345G-100AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1345G-100AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1345G-100AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1345G-100AXCT?

CY7C1345G-100AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1345G-100AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1345G-100AXCT?

For technical support, including CY7C1345G-100AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1345G-100AXCT requirements.

6.How does Aetrix verify that CY7C1345G-100AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1345G-100AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1345G-100AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1345G-100AXCT?

All CY7C1345G-100AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1345G-100AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1345G-100AXCT part is unused and in its original packaging.

Return procedure for CY7C1345G-100AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1345G-100AXCT Tags

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