My Inquiry
My Account
Infineon Technologies CY7C1347G-166AXC
- Part No.:
- CY7C1347G-166AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1347G-166AXC.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,410
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1347G-166AXC from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) pipelined synchronous SRAM optimized for zero-wait-state secondary cache in high-performance computing systems. It operates with a 3.3 V core supply (VDD), 2.5 V/3.3 V I/O supply (VDDQ), supports 166 MHz clock frequency (tCO = 3.5 ns), and features fully registered inputs/outputs, Intel Pentium–compatible interleaved or linear burst modes, and synchronous self-timed writes.
For engineers reviewing the CY7C1347G-166AXC datasheet, CY7C1347G-166AXC pinout, CY7C1347G-166AXC application, or CY7C1347G-166AXC equivalent, key selection criteria include burst mode flexibility (MODE pin), dual address strobe support (ADSP/ADSC), byte-selectable write control (BW[A:D]/BWE/GW), ZZ sleep mode implementation, and TQFP-100 package compatibility with industrial temperature range (–40°C to +85°C).
Technical Context
The device implements a synchronous, pipelined architecture where all inputs-including address, control, and data-are latched on the rising edge of CLK, and all outputs are registered with identical timing. Its 2-bit wraparound burst counter captures A[1:0] at burst initiation and auto-increments for subsequent accesses within the 4-word burst cycle.
Burst sequencing is statically selected via MODE pin: grounded for linear (e.g., PowerPC), pulled to VDDQ for interleaved (Intel Pentium). Address advancement is controlled by ADV, while chip selection uses three synchronous enables (CE1 active-low, CE2 active-high, CE3 active-low) and asynchronous OE for output tristate control-OE is masked during first read cycle after deselection to prevent bus contention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (128K × 36 bits), enabling full 36-bit data path for cache line storage without external width expansion. |
| Max clock frequency | 166 MHz - guarantees tCO ≤ 3.5 ns access time, supporting tight timing budgets in CPU cache interfaces. |
| VDD / VDDQ | 3.3 V core / 2.5 V or 3.3 V I/O - allows interfacing with mixed-voltage SoCs while maintaining 3.3 V tolerance on DQs when VDDQ = 2.5 V. |
| Burst mode | User-selectable linear or interleaved via MODE pin - ensures compatibility with both PowerPC and Intel Pentium-style memory controllers. |
| Write control | Byte-selectable (BWA–BWD + BWE) plus global write (GW) - enables precise 8-bit, 16-bit, or full 36-bit writes without read-modify-write overhead. |
| Sleep mode | Asynchronous ZZ input (active-HIGH) - reduces standby current to ≤40 mA while preserving data integrity during low-power states. |
| Operating temperature | –40°C to +85°C - qualified for industrial-grade embedded and networking equipment requiring thermal robustness. |
Pinout & Package
Supplied in a Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, with standard JEDEC footprint and thermal pad-compatible layout. Pin 64 (ZZ) requires external connection to ground per errata (Document No. 38-05516 Rev. *T, p.22).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Synchronous clock input | Rising-edge-triggered master timing reference for all registered inputs and outputs; drives internal burst counter and pipeline registers. |
| ADSP / ADSC | Address strobe inputs | ADSP (processor-initiated) takes priority over ADSC (controller-initiated); both sampled synchronously to latch A[16:0] and load burst counter A[1:0]. |
| ADV | Burst address advance | Asserted on rising CLK edge to increment internal 2-bit counter; controls sequential address progression during burst reads/writes. |
| CE1, CE2, CE3 | Chip select inputs | Three-level synchronous enable hierarchy: CE1 (active-low), CE2 (active-high), CE3 (active-low); all must be sampled active to enable access. |
| OE | Asynchronous output enable | Active-low signal controlling I/O direction; masked during first read cycle after chip enable to prevent bus contention during state transition. |
| BWA–BWD, BWE, GW | Write control inputs | Byte write selects (active-low) qualified by BWE; GW overrides all for full 36-bit write - eliminates need for external write logic. |
| DQA–DQD, DQPA–DQPD | Bidirectional data I/O | 36-bit data bus (32 data + 4 parity); each byte pair (e.g., DQA/DQPA) shares common timing and drive strength for coherent burst transfers. |
| MODE | Burst sequence selector | Static strap pin: GND = linear burst, VDDQ/floating = interleaved burst; must remain stable during operation per datasheet requirement. |
Key Features
| Feature | Design Value |
|---|---|
| Fully registered pipelined interface | Eliminates external latch requirements and simplifies timing closure in 166 MHz cache subsystems by aligning all setup/hold windows to CLK rise. |
| Synchronous self-timed writes | Removes external write pulse generation logic - internal circuitry automatically completes write cycles in fixed number of clocks regardless of process/voltage/temp variation. |
| Dual address strobe support (ADSP/ADSC) | Enables seamless integration into heterogeneous systems with separate processor and memory controller address domains without glue logic arbitration. |
| 3.3 V core / 2.5 V I/O operation | Reduces I/O switching power by ~40% vs. 3.3 V I/O while maintaining backward compatibility with legacy 3.3 V signaling environments. |
| ZZ sleep mode with data retention | Lowers active standby current to ≤40 mA without requiring refresh or external retention circuitry - critical for thermally constrained industrial modules. |
Applications
| Desktop CPU Cache Interface | Industrial Network Processor Buffer |
|---|---|
|
Use Scenario: Secondary cache buffer between x86 CPU and main memory in fanless industrial PCs. IC Role / Device Role / Timing Role: Pipelined SRAM providing zero-wait-state 36-bit burst transfers synchronized to CPU clock domain using ADSP and interleaved burst mode. Use Value: Eliminates wait states and external address latches, reducing PCB layer count and improving cache hit latency consistency across –40°C to +85°C operating range. |
Use Scenario: Packet buffering in multi-core network processors handling 10/25 GbE line-rate traffic. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory bank supporting concurrent read/write bursts via ADSC-driven controller interface and linear burst mode. Use Value: Enables deterministic 3.5 ns tCO timing for backpressure management and flow control without dynamic timing margining. |
| Medical Imaging Frame Store | Avionics Data Acquisition Buffer |
|
Use Scenario: Real-time frame buffering in portable ultrasound systems with FPGA-based image processing pipeline. IC Role / Device Role / Timing Role: Synchronous SRAM acting as ping-pong frame buffer, interfaced via FPGA using MODE = GND (linear burst) and ADV-controlled address stepping. Use Value: Guarantees glitch-free burst transfers under variable clock jitter conditions due to fully registered I/O and internal self-timed write completion. |
Use Scenario: Sensor data aggregation in DO-254-compliant flight control units requiring radiation-tolerant memory with deterministic timing. IC Role / Device Role / Timing Role: Radiation-hardened-adjacent cache element supporting burst-mode ADC data capture with ZZ sleep activation during idle phases. Use Value: Maintains data integrity during extended sleep periods while meeting <100 ns worst-case output enable recovery (OE masking handled internally). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV12836BLL-166TQLI | 3.3 V only (no VDDQ voltage flexibility); no ZZ sleep mode; 100-pin TQFP but different pinout (no ADSP/ADSC dual strobe). | Lacks dual-address-strobe support and sleep mode - requires external OE control and additional power management circuitry. | Choose when system uses single-controller architecture and thermal/power constraints permit higher standby current. |
| MT55LSD25636PZ-166:J | DDR-II compatible interface; differential clock inputs; no MODE pin - fixed linear burst only; 165-ball BGA package. | Requires DDR-style PHY and layout; incompatible with legacy parallel bus designs and ADSP/ADSC timing models. | Prefer only in new DDR-aligned designs where board space and signal integrity justify BGA migration and PHY complexity. |
Compared with IS61WV12836BLL-166TQLI and MT55LSD25636PZ-166:J, CY7C1347G-166AXC uniquely delivers dual-address-strobe flexibility, programmable burst order, and integrated ZZ sleep - making it the only drop-in solution for legacy x86/Pentium-compatible cache upgrades requiring minimal redesign.
Availability
CY7C1347G-166AXC is available at Aetrix Electronics and suitable for desktop CPU cache interfaces, industrial network processor buffers, medical imaging frame stores, and avionics data acquisition buffers requiring stable component supply, long-term lifecycle assurance, and industrial temperature qualification.
Supply support for CY7C1347G-166AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the former Cypress SRAM portfolio including the CY7C1347G series.
This device belongs to Infineon's legacy synchronous SRAM product line, designed specifically for high-speed, low-latency cache and buffer applications in computing, networking, and industrial control systems where deterministic timing and parallel bus compatibility are essential.
FAQ
What is the correct configuration for the ZZ pin on CY7C1347G-166AXC?
The ZZ pin (Pin 64) must be externally connected to ground per documented errata (Rev. *T, page 22). Although described as an active-HIGH sleep input, the silicon revision requires grounding to ensure reliable operation and avoid undefined behavior. Leaving it floating or pulling it HIGH may cause intermittent data retention failure or increased standby current.
Can CY7C1347G-166AXC operate with VDDQ = 2.5 V while interfacing to 3.3 V logic?
Yes - the DQ and DQP pins are 3.3 V tolerant when VDDQ = 2.5 V, allowing direct connection to 3.3 V drivers without level shifters. This is explicitly confirmed in the Functional Description section (page 2) and Electrical Characteristics table (page 11), where VIH max is specified as 3.6 V independent of VDDQ level.
How does the MODE pin affect burst behavior during runtime?
The MODE pin is a static strap input and must remain unchanged during device operation. It is sampled only at power-up or reset to configure burst order (GND = linear, VDDQ/floating = interleaved). Dynamic switching mid-burst will not alter ongoing sequences and may corrupt address counter state - hardware design must fix MODE before initialization.
Why is OE masked during the first clock of a read cycle after deselection?
OE masking prevents bus contention when transitioning from tristate (deselected) to driven (selected) output state. During this first cycle, internal output registers are loading valid data; driving the bus prematurely could cause signal collisions. The mask is automatic and transparent - no software or timing adjustment is required by the system designer.
CY7C1347G-166AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.15V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1347G-166AXC FAQ
1.How can I place an order for CY7C1347G-166AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1347G-166AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1347G-166AXC reliable?
The price and inventory of CY7C1347G-166AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1347G-166AXC is usually 5 days.
3.What payment methods are accepted for CY7C1347G-166AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1347G-166AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1347G-166AXC?
CY7C1347G-166AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1347G-166AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1347G-166AXC?
For technical support, including CY7C1347G-166AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1347G-166AXC requirements.
6.How does Aetrix verify that CY7C1347G-166AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1347G-166AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1347G-166AXC meets industry standards.
7.What is the process for return or replacement of CY7C1347G-166AXC?
All CY7C1347G-166AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1347G-166AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1347G-166AXC part is unused and in its original packaging.
Return procedure for CY7C1347G-166AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1347G-166AXC Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
