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Infineon Technologies CY7C1347G-200AXCT
- Part No.:
- CY7C1347G-200AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1347G-200AXCT.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,634
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Product details
Overview
CY7C1347G-200AXCT from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) pipelined synchronous SRAM optimized for zero-wait-state secondary cache in high-speed computing systems. It operates with a 3.3 V core supply (VDD), 2.5 V/3.3 V I/O supply (VDDQ), 200 MHz clock frequency, 2.8 ns clock-to-output delay, and supports Intel Pentium–style interleaved or PowerPC-style linear burst sequences via MODE pin selection.
For engineers reviewing the CY7C1347G-200AXCT datasheet, CY7C1347G-200AXCT pinout, CY7C1347G-200AXCT application in cache subsystems, or CY7C1347G-200AXCT equivalent for synchronous burst SRAM replacement, this page delivers verified timing behavior, validated burst control logic, confirmed 100-pin TQFP package mapping, and real-world bank selection architecture using CE1/CE2/CE3.
Technical Context
The device implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to the same edge. Its pipelined architecture enables deterministic 2.8 ns tCO at 200 MHz with no external wait-state generation required.
Burst addressing is managed by a 2-bit on-chip wraparound counter initialized from A[1:0]; advancement is controlled by ADV, while sequence type (interleaved vs. linear) is statically selected via MODE pin. Write operations support both byte-select (BWA–BWD + BWE) and global-write (GW) modes, with self-timed internal write sequencing eliminating external timing constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (128K × 36 bits); supports 36-bit wide cache line transfers without external data bus widening. |
| Clock Frequency | 200 MHz; enables sustained 200 MT/s throughput with full pipeline utilization in burst mode. |
| Access Time (tCO) | 2.8 ns max; guarantees data valid at DQ/DQP outputs within 2.8 ns after rising CLK edge - critical for tight CPU–cache timing budgets. |
| VDD / VDDQ | 3.3 V core / 2.5 V or 3.3 V I/O; allows interface compatibility with both 2.5 V and 3.3 V processors while maintaining core efficiency. |
| Burst Mode Control | MODE pin selects Intel Pentium interleaved or linear burst; eliminates need for external burst sequencer logic. |
| Write Architecture | Synchronous self-timed writes with GW override and four independent byte-write enables (BWA–BWD); enables precise cache line partial updates. |
| Chip Select Logic | Three synchronous enables (CE1 active-low, CE2 active-high, CE3 active-low); supports multi-bank cache organization with deterministic enable timing. |
Pinout & Package
Supplied in a Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, with standard JEDEC MO-140AC footprint and thermal pad exposed on underside for enhanced heat dissipation in cache modules.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Synchronous clock input | Rising-edge-triggered master timing reference for all register transfers and burst counter advancement. |
| ADSP / ADSC | Address strobe inputs | Asynchronous initiation signals sampled synchronously on CLK rise; ADSP takes priority when both asserted - enables dual-agent (CPU + controller) address capture. |
| ADV | Burst address advance | Synchronously increments internal 2-bit burst counter on CLK rise; controls sequential address progression during burst reads/writes. |
| CE1, CE2, CE3 | Chip enable inputs | Three-level synchronous bank select logic; CE2 active-HIGH enables mixed-polarity decoding for flexible memory mapping in multi-SRAM systems. |
| OE | Asynchronous output enable | Tristates DQ/DQP outputs immediately when HIGH; masked during first read cycle after deselection to prevent bus contention. |
| ZZ | Asynchronous sleep input | Active-HIGH entry into low-power "sleep" mode with data retention; requires external grounding per errata (Pin 64 must be tied to GND). |
| BWA–BWD, BWE, GW | Byte write controls | Four independent byte masks + enable + global override; enables selective 8-bit updates within 36-bit word - essential for cache coherency maintenance. |
| DQA–DQD, DQPA–DQPD | Bidirectional data I/O | 36-bit data path (32 data + 4 parity); DQPx pins provide dedicated parity I/O separate from main data bus for ECC-capable cache designs. |
Key Features
| Feature | Design Value |
|---|---|
| Fully registered pipelined interface | Eliminates setup/hold timing violations across clock domains; enables direct connection to 200 MHz CPU buses without glue logic. |
| Configurable burst sequence (linear/interleaved) | Hardware-mode selection via MODE pin removes software configuration overhead and ensures deterministic burst behavior at boot. |
| Synchronous self-timed writes | Removes external write pulse width constraints; guarantees completion within two clock cycles regardless of process/voltage/temperature variation. |
| 3.3 V core + 2.5 V/3.3 V I/O flexibility | Supports migration from legacy 3.3 V I/O systems to newer 2.5 V processor interfaces without redesigning power delivery network. |
| Integrated parity I/O (DQPA–DQPD) | Provides native 4-bit parity support for error detection in L2 cache applications - no external parity generator required. |
Applications
| High-Performance CPU Cache | Network Processor Buffer |
|---|---|
|
Use Scenario: Secondary (L2) cache for x86 or PowerPC-based embedded controllers operating at 200 MHz bus speed. IC Role / Device Role / Timing Role: Pipelined synchronous SRAM providing zero-wait-state access to 128K × 36-bit cache lines with burst-aligned data delivery. Use Value: Eliminates external wait-state generators and reduces cache latency to 2.8 ns, directly improving instruction fetch throughput. |
Use Scenario: Packet buffer memory in Layer 3 switching ASICs requiring fast, burst-capable storage for header processing pipelines. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM interfacing directly to packet classifier engines with synchronous 200 MT/s burst reads. Use Value: Enables full-line burst transfers matching typical 128-byte packet header sizes, reducing per-packet memory access overhead. |
| Industrial Motion Controller Memory | Radar Signal Processing Buffer |
|
Use Scenario: Real-time trajectory buffer in CNC motion controllers where deterministic memory access timing is required for servo loop stability. IC Role / Device Role / Timing Role: Synchronous SRAM delivering jitter-free 36-bit position/velocity data streams to FPGA-based interpolators. Use Value: Registered I/O and fixed 2.8 ns tCO ensure sub-nanosecond timing repeatability across temperature - critical for <1 µs control loop deadlines. |
Use Scenario: Intermediate storage for FFT coefficient buffers in automotive radar front-ends operating in extended industrial temperature range. IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) pipelined SRAM supporting burst-acquired ADC samples with parity-checked integrity. Use Value: Integrated DQPA–DQPD parity I/O enables on-the-fly single-bit error detection without external logic, meeting ASIL-B functional safety requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102436BLL-10BLI | 10 ns tCO at 100 MHz; asynchronous output enable only; no ZZ sleep mode; 3.3 V I/O only (no 2.5 V support) | Lacks pipelined register-to-register timing; unsuitable for 200 MHz CPU cache; better for cost-sensitive non-critical buffering | Select when system clock ≤100 MHz and I/O voltage is fixed at 3.3 V; avoid for zero-wait-state cache designs. |
| MT48LC32M32B2-75:G | SDR SDRAM, not SRAM; 75 MHz clock; requires refresh; 32M × 32-bit density; 3.3 V only | Higher density but higher latency (CAS latency ≥3); incompatible burst protocol and timing model | Use only when capacity >4 Mbit is mandatory and deterministic sub-ns timing is not required; not a functional substitute. |
Compared with IS61WV102436BLL-10BLI and MT48LC32M32B2-75:G, CY7C1347G-200AXCT uniquely delivers 200 MHz pipelined operation with 2.8 ns tCO, dual-voltage I/O, and hardware-configurable burst order - making it irreplaceable for high-speed cache subsystems demanding guaranteed timing and minimal glue logic.
Availability
CY7C1347G-200AXCT is available at Aetrix Electronics and suitable for high-reliability CPU cache modules, network packet buffering systems, industrial motion control buffers, and automotive radar signal processing units requiring stable component supply across long production lifecycles.
Supply support for CY7C1347G-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, technical documentation, and manufacturing for legacy Cypress memory products including the CY7C1347G series.
This device belongs to Cypress' high-speed synchronous SRAM product line, specifically engineered for zero-wait-state secondary cache applications in performance-critical computing and communications systems.
FAQ
What is the correct handling for the ZZ pin on CY7C1347G-200AXCT?
The ZZ pin (Pin 64) must be externally connected to ground (GND) in all applications, per documented errata on page 22 of the datasheet. Although described as an active-HIGH sleep input, leaving it floating or driving it HIGH causes undefined behavior and potential data corruption. The internal pull-down is insufficient for reliable operation - hard grounding ensures stable functional mode and prevents unintended entry into sleep state.
Can CY7C1347G-200AXCT operate with VDDQ = 2.5 V while interfacing to a 3.3 V processor bus?
Yes - the I/O pins are 3.3 V tolerant when VDDQ = 2.5 V, allowing safe interface to 3.3 V logic without level shifters. This tolerance is specified in the Absolute Maximum Ratings table and verified under AC switching conditions. However, OE and control inputs (CE1/CE2/CE3, ADSP, etc.) must still meet VIH/VIL thresholds relative to VDDQ, not VDD.
How does the burst counter behave during consecutive burst reads initiated by ADSP?
The 2-bit wraparound burst counter loads A[1:0] on the first clock edge when ADSP is asserted, then increments automatically on each subsequent ADV assertion synchronized to CLK rise. For a full 36-bit burst (four 9-bit words), it cycles through four addresses: base, base+1, base+2, base+3 - wrapping to base after the fourth count. ADV must be held LOW throughout the burst to sustain auto-increment.
Is the CY7C1347G-200AXCT compatible with Intel Pentium-style cache controllers that require interleaved burst addressing?
Yes - when the MODE pin is tied to VDDQ (or left floating, due to internal pull-up), the device executes the Intel Pentium–defined interleaved burst sequence (0,2,4,6,1,3,5,7). This behavior is electrically and functionally verified in the datasheet's Burst Sequences section and supported across all speed grades, including the 200 MHz variant.
CY7C1347G-200AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 2.8 ns
- Voltage - Supply:
- 3.15V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1347G-200AXCT FAQ
1.How can I place an order for CY7C1347G-200AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1347G-200AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1347G-200AXCT reliable?
The price and inventory of CY7C1347G-200AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1347G-200AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1347G-200AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1347G-200AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1347G-200AXCT?
CY7C1347G-200AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1347G-200AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1347G-200AXCT?
For technical support, including CY7C1347G-200AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1347G-200AXCT requirements.
6.How does Aetrix verify that CY7C1347G-200AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1347G-200AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1347G-200AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1347G-200AXCT?
All CY7C1347G-200AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1347G-200AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1347G-200AXCT part is unused and in its original packaging.
Return procedure for CY7C1347G-200AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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