Infineon Technologies CY7C1350G-133AXC

Overview

CY7C1350G-133AXC from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations. It operates at 133 MHz with 4.0 ns clock-to-output delay, supports 3.3 V core supply (VDD) and 2.5/3.3 V I/O supply (VDDQ), and features byte-write capability, linear/interleaved burst modes, and ZZ sleep mode.

For engineers reviewing the CY7C1350G-133AXC datasheet, CY7C1350G-133AXC pinout, CY7C1350G-133AXC application, or CY7C1350G-133AXC equivalent, key selection criteria include synchronous burst timing integrity, 100-pin TQFP package compatibility, NoBL™ latency elimination, and support for depth-expanded memory banks using CE1/CE2/CE3 decoding.

Technical Context

The CY7C1350G-133AXC implements a fully synchronous, pipelined memory interface where all address, control, and data inputs are registered on the rising edge of CLK, and all outputs are registered with 4.0 ns tCO. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transitions without wait states, using internal self-timed write circuitry and synchronous output buffer control.

Burst addressing is managed by a two-bit on-chip counter driven by A[1:0] and ADV/LD, with burst order (linear or interleaved) selected by the MODE strap pin. Chip select is implemented via three synchronous enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW), while OE provides asynchronous tristate control - masked during write data cycles to prevent bus contention.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, lead-free. Pin 64 (ZZ) requires external connection to ground per errata.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with AS7C34098A-133JCIN and IS61WV102436B-133TQLI, the CY7C1350G-133AXC uniquely delivers guaranteed zero-wait-state operation, integrated parity I/O, and hardware-managed sleep - making it optimal for latency-sensitive, fault-tolerant, and power-aware embedded memory subsystems.

Availability

CY7C1350G-133AXC is available at Aetrix Electronics and suitable for telecom infrastructure, automated test equipment, industrial motion control, and real-time DSP applications requiring stable component supply across multi-year production lifecycles.

Supply support for CY7C1350G-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.

The CY7C1350G belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in networking, test, and industrial control systems.

FAQ

What is the function of the MODE pin on CY7C1350G-133AXC?

The MODE pin is a static configuration input that selects burst address sequencing: tied to GND for linear burst order (0,1,2,3), or to VDD/floating for interleaved burst (0,2,1,3). It is sampled only at power-up or reset and must remain stable during operation to avoid undefined burst behavior.

Why must the ZZ pin be externally grounded despite being labeled "active HIGH"?

Per documented errata (Rev. *S, page 19), the ZZ pin (Pin 64 in TQFP, Ball T7 in BGA) exhibits silicon-level leakage that prevents reliable sleep-mode entry unless actively pulled to GND. Leaving it floating or driving it HIGH causes unpredictable current draw and potential data retention failure.

How does the CY7C1350G-133AXC handle bus contention during write cycles?

During the data portion of any write sequence, the device automatically tri-states all DQs and DQP[A:D] outputs regardless of OE state - enforced by internal synchronous logic. This prevents contention with external drivers and eliminates need for external bus arbitration logic.

Can CE2 be used as an active-LOW enable like CE1 and CE3?

No - CE2 is defined as active HIGH per datasheet (page 5). Using it as active LOW violates timing and functional specifications. Correct bank selection requires CE1=LOW, CE2=HIGH, CE3=LOW simultaneously at CLK rise; inversion would cause permanent deselection or metastability.