Infineon Technologies CY7C1350G-133AXCT

Overview

CY7C1350G-133AXCT from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations. It operates at 133 MHz with 4.0 ns clock-to-output delay, supports 3.3 V core supply and 2.5 V/3.3 V I/O supply, and features byte write capability, linear/interleaved burst modes, and ZZ sleep mode - deployed in network packet buffers and telecom line card data path memory.

For engineers reviewing the CY7C1350G-133AXCT datasheet, CY7C1350G-133AXCT pinout, CY7C1350G-133AXCT application, or CY7C1350G-133AXCT equivalent, key selection criteria include burst order control via MODE pin, synchronous self-timed write timing, CEN-gated clock qualification, and TQFP-100 package compatibility with ZBT™-legacy systems.

Technical Context

The CY7C1350G-133AXCT implements a fully synchronous, rising-edge-triggered pipeline architecture where all address, control, and data inputs are registered on CLK's rising edge, and all outputs are registered with 4.0 ns tCO (133 MHz). Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transitions without wait states.

It uses three synchronous chip enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW) for bank selection, asynchronous OE for output tristate control, and four byte-write signals (BWA–BWD) qualified with WE to enable granular 8-bit writes. The ZZ pin places the device in low-power sleep mode while preserving data integrity.

Key Specifications

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133PFI and IS61WV102436B-133TQLI, the CY7C1350G-133AXCT uniquely integrates an internal ZZ pull-down, dual-voltage I/O support, and NoBL™-guaranteed zero-wait-state operation - making it optimal for thermally constrained, mixed-signal, or power-gated systems.

Availability

CY7C1350G-133AXCT is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, baseband processor cache, and radar signal processing buffers requiring stable component supply across extended industrial temperature ranges.

Supply support for CY7C1350G-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.

The CY7C1350G belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in networking, telecom infrastructure, and real-time signal processing equipment.

FAQ

What is the function of the MODE pin on CY7C1350G-133AXCT?

The MODE pin selects burst address sequence: tied to GND for linear burst (0,1,2,3), or to VDD/floating for interleaved burst (0,2,4,6). This setting determines how the internal 2-bit burst counter increments using A0/A1, and must be stable before initial access. It does not affect single-access behavior and remains static during operation.

How should the ZZ pin be handled per the errata?

Per datasheet errata (page 19), the ZZ pin (Pin 64 in TQFP) must be externally connected to ground - despite its active-HIGH definition - to prevent undefined behavior. The device includes an internal pull-down, but grounding ensures reliable sleep-mode entry and avoids potential latch-up during power-up sequencing.

Does CY7C1350G-133AXCT support 2.5 V-only I/O operation?

Yes. VDDQ may be supplied at 2.5 V ± 0.2 V while VDD remains at 3.3 V ± 0.3 V, enabling direct interface with 2.5 V logic families. The datasheet specifies separate AC/DC characteristics for both VDDQ=2.5 V and VDDQ=3.3 V conditions, including 4.0 ns tCO at 133 MHz under 2.5 V I/O operation.

Can CE2 be used as an active-LOW signal like CE1 and CE3?

No. CE2 is defined as active HIGH per the pin definition table (page 5) and truth table (page 8). Using it as active LOW violates the device's synchronous enable decoding logic and will prevent proper chip selection. CE1 and CE3 must be active LOW; CE2 must be active HIGH for valid 3-signal decode.