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Infineon Technologies CY7C1350G-133AXCT
- Part No.:
- CY7C1350G-133AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1350G-133AXCT.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:3,238
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Product details
Overview
CY7C1350G-133AXCT from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations. It operates at 133 MHz with 4.0 ns clock-to-output delay, supports 3.3 V core supply and 2.5 V/3.3 V I/O supply, and features byte write capability, linear/interleaved burst modes, and ZZ sleep mode - deployed in network packet buffers and telecom line card data path memory.
For engineers reviewing the CY7C1350G-133AXCT datasheet, CY7C1350G-133AXCT pinout, CY7C1350G-133AXCT application, or CY7C1350G-133AXCT equivalent, key selection criteria include burst order control via MODE pin, synchronous self-timed write timing, CEN-gated clock qualification, and TQFP-100 package compatibility with ZBT™-legacy systems.
Technical Context
The CY7C1350G-133AXCT implements a fully synchronous, rising-edge-triggered pipeline architecture where all address, control, and data inputs are registered on CLK's rising edge, and all outputs are registered with 4.0 ns tCO (133 MHz). Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transitions without wait states.
It uses three synchronous chip enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW) for bank selection, asynchronous OE for output tristate control, and four byte-write signals (BWA–BWD) qualified with WE to enable granular 8-bit writes. The ZZ pin places the device in low-power sleep mode while preserving data integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (128K × 36 bits), supporting 36-bit wide data paths in high-bandwidth interfaces |
| Access Speed | 4.0 ns clock-to-output (tCO) at 133 MHz - enables deterministic timing for real-time packet buffering |
| Supply Voltages | VDD = 3.3 V ± 0.3 V (core); VDDQ = 2.5 V or 3.3 V (I/O) - allows mixed-voltage system integration |
| Burst Mode | Selectable linear or interleaved via MODE pin - matches CPU or ASIC burst addressing requirements |
| Write Architecture | Synchronous self-timed writes with BW[A:D] + WE - eliminates external write pulse timing constraints |
| Sleep Mode | ZZ input (asynchronous, active HIGH) reduces standby current to ≤40 mA - preserves data during idle periods |
| Package | Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) - compatible with standard surface-mount assembly processes |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus latched on CLK rise; A0/A1 feed internal 2-bit burst counter |
| BWA–BWD | Byte Write Enables | Active-LOW synchronous signals controlling 8-bit write granularity per DQ byte group (A–D) |
| CE1, CE2, CE3 | Chip Enables | Three-level synchronous decode (CE1/CE3 active LOW, CE2 active HIGH) for depth expansion and bank isolation |
| CLK, CEN | Clock & Enable | CLK qualified by CEN (active LOW); deasserting CEN extends previous cycle without losing state |
| OE | Output Enable | Asynchronous, active-LOW signal that overrides internal logic to tri-state DQ/DQP during deselect or write |
| ZZ | Sleep Control | Asynchronous, active-HIGH input; requires external tie-to-GND per errata - disables clocks and reduces power |
| DQPA–DQPD | Data Parity I/O | Four parity bits synchronized with DQA–DQD; controlled by same BW[A:D] signals during writes |
| MODE | Burst Order Select | Strap pin: GND = linear burst, VDD/floating = interleaved burst - sets address increment pattern |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Enables true back-to-back read/write operations with no wait states - critical for packet forwarding engines |
| Internally self-timed output buffer control | Eliminates need for external OE timing control - simplifies PCB layout and timing closure |
| Synchronous self-timed writes | Removes dependency on precise WE pulse width - improves write reliability across voltage/temperature |
| Byte write capability (BW[A:D]) | Allows partial-word updates without read-modify-write cycles - reduces bus traffic in control-plane memory |
| Linear/interleaved burst selection | Configurable via MODE pin to match host processor burst addressing behavior - avoids software remapping |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before classification and forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly with MAC and switch fabric controllers. Use Value: 4.0 ns tCO and NoBL™ enable full 133 MHz throughput with zero wait states - sustaining 4.8 GB/s aggregate bandwidth across 36-bit bus. | Use Scenario: Holding ATM cell headers, signaling messages, and configuration tables in DSLAM or OLT line cards. IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as descriptor memory and temporary payload store for TDMA scheduling logic. Use Value: Byte-write capability and MODE-selectable burst order align precisely with ATM cell header update patterns and ASIC burst access protocols. |
| Baseband Processor Cache | Radar Signal Processing Buffer |
Use Scenario: Serving as instruction/data cache for multi-core DSPs in 4G/5G baseband units handling real-time channel estimation. IC Role / Device Role / Timing Role: Low-latency, pipelined memory co-located with baseband accelerators to minimize stall cycles. Use Value: ZZ sleep mode cuts standby current to ≤40 mA during inter-frame gaps - extending thermal headroom in dense RF modules. | Use Scenario: Capturing and staging digitized IF samples from ADCs prior to FFT processing in pulsed radar receivers. IC Role / Device Role / Timing Role: High-reliability burst SRAM buffering time-critical sample streams with deterministic read/write turnaround. Use Value: Synchronous self-timed writes ensure consistent 133 MHz write capture timing across temperature - eliminating sample loss at -40°C to +85°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L133PFI | 3.3 V only (no VDDQ flexibility); 133 MHz, 128K × 36; no ZZ sleep mode | Lacks low-power sleep - unsuitable for duty-cycled radar or battery-backed telecom modules | Choose when VDDQ voltage matching is unnecessary and sleep mode is not required |
| ISSI IS61WV102436B-133TQLI | Same density/package; 4.0 ns tCO; supports ZZ but requires external pull-down resistor (CY7C1350G has internal pull-down) | Requires board-level resistor for ZZ; slightly higher max operating current (235 mA vs. 225 mA) | Choose when cost sensitivity outweighs minor layout overhead of external pull-down |
Compared with IDT72V2115L133PFI and IS61WV102436B-133TQLI, the CY7C1350G-133AXCT uniquely integrates an internal ZZ pull-down, dual-voltage I/O support, and NoBL™-guaranteed zero-wait-state operation - making it optimal for thermally constrained, mixed-signal, or power-gated systems.
Availability
CY7C1350G-133AXCT is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, baseband processor cache, and radar signal processing buffers requiring stable component supply across extended industrial temperature ranges.
Supply support for CY7C1350G-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.
The CY7C1350G belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in networking, telecom infrastructure, and real-time signal processing equipment.
FAQ
What is the function of the MODE pin on CY7C1350G-133AXCT?
The MODE pin selects burst address sequence: tied to GND for linear burst (0,1,2,3), or to VDD/floating for interleaved burst (0,2,4,6). This setting determines how the internal 2-bit burst counter increments using A0/A1, and must be stable before initial access. It does not affect single-access behavior and remains static during operation.
How should the ZZ pin be handled per the errata?
Per datasheet errata (page 19), the ZZ pin (Pin 64 in TQFP) must be externally connected to ground - despite its active-HIGH definition - to prevent undefined behavior. The device includes an internal pull-down, but grounding ensures reliable sleep-mode entry and avoids potential latch-up during power-up sequencing.
Does CY7C1350G-133AXCT support 2.5 V-only I/O operation?
Yes. VDDQ may be supplied at 2.5 V ± 0.2 V while VDD remains at 3.3 V ± 0.3 V, enabling direct interface with 2.5 V logic families. The datasheet specifies separate AC/DC characteristics for both VDDQ=2.5 V and VDDQ=3.3 V conditions, including 4.0 ns tCO at 133 MHz under 2.5 V I/O operation.
Can CE2 be used as an active-LOW signal like CE1 and CE3?
No. CE2 is defined as active HIGH per the pin definition table (page 5) and truth table (page 8). Using it as active LOW violates the device's synchronous enable decoding logic and will prevent proper chip selection. CE1 and CE3 must be active LOW; CE2 must be active HIGH for valid 3-signal decode.
CY7C1350G-133AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1350G-133AXCT FAQ
1.How can I place an order for CY7C1350G-133AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1350G-133AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1350G-133AXCT reliable?
The price and inventory of CY7C1350G-133AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1350G-133AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1350G-133AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1350G-133AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1350G-133AXCT?
CY7C1350G-133AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1350G-133AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1350G-133AXCT?
For technical support, including CY7C1350G-133AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1350G-133AXCT requirements.
6.How does Aetrix verify that CY7C1350G-133AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1350G-133AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1350G-133AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1350G-133AXCT?
All CY7C1350G-133AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1350G-133AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1350G-133AXCT part is unused and in its original packaging.
Return procedure for CY7C1350G-133AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1350G-133AXCT Tags
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