Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1350G-133AXI

Part No.:
CY7C1350G-133AXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1350G-133AXI.pdf
Description:
IC SRAM 4.5MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:343

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1350G-133AXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 133 MHz with 4.0 ns clock-to-output delay, supports 3.3 V core supply (VDD) and 2.5/3.3 V I/O supply (VDDQ), and enables true back-to-back read/write operations without wait states in burst or single-access modes.

For engineers reviewing the CY7C1350G-133AXI datasheet, CY7C1350G-133AXI pinout, CY7C1350G-133AXI application, or CY7C1350G-133AXI equivalent, key selection considerations include its 100-pin TQFP package, synchronous self-timed write control, byte-write capability via BW[A:D], ZZ sleep mode, and linear/interleaved burst ordering controlled by the MODE strap pin.

Technical Context

The CY7C1350G-133AXI implements a fully pipelined synchronous interface with all inputs registered on the rising edge of CLK and all outputs registered on the same edge. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles with data valid every clock - critical for packet buffering and real-time switching fabric applications.

It uses three synchronous chip enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW) for bank selection, asynchronous OE for output tristate control, and CEN to gate clock recognition without deselecting the device. The ZZ pin places the device in low-power sleep mode while preserving data integrity, requiring external grounding per errata.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density 4 Mbit (128K × 36 bits), supporting 36-bit wide data paths for high-bandwidth interconnect buffers
Max clock frequency 133 MHz - defines maximum sustained throughput of 4.788 Gb/s (133 MHz × 36 bits)
Access time (tCO) 4.0 ns - guaranteed clock-to-output delay for timing-critical pipeline stages in switch ASIC interfaces
VDD / VDDQ 3.3 V core / 2.5 V or 3.3 V I/O - enables interoperability with both 2.5 V and 3.3 V logic families in mixed-voltage systems
Burst capability Linear or interleaved 4-word burst - selectable via MODE pin; reduces address bus toggling and improves bus efficiency
Byte write control BW[A:D] + WE - allows independent write enable per 9-bit byte (A/B/C/D), essential for partial-word updates in protocol header manipulation
Sleep mode ZZ input (asynchronous, active HIGH) - reduces standby current to ≤40 mA while retaining data; requires external ground connection per errata

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, lead-free.

Pin/Terminal Circuit Role Design Meaning
A[1:0] Address inputs Latched on CLK rise; feed 2-bit burst counter for sequential access; define starting address for linear/interleaved bursts
BW[A:D] Byte write select Active-LOW synchronous controls write enable per 9-bit byte; qualified by WE and CLK; enables granular data updates
CE1, CE2, CE3 Chip enable group Three-signal decode (CE1↓, CE2↑, CE3↓) enables depth expansion across multiple SRAMs without external logic
OE Asynchronous output enable Tri-states DQ/DQP pins immediately when HIGH; masked during write data phase to prevent bus contention
ZZ Sleep mode control Asynchronous active-HIGH input; must be externally grounded (per errata) to disable sleep and ensure normal operation
MODE Burst order selector Strap pin: GND = linear burst, VDD/floating = interleaved burst; determines address increment pattern for burst reads/writes

Key Features

Feature Design Value
No Bus Latency™ (NoBL™) architecture Enables uninterrupted back-to-back read/write cycles with zero wait states - increases effective bandwidth by up to 2× vs. conventional synchronous SRAMs
Internally self-timed output buffer control Eliminates need for external OE timing coordination; output registers align data to CLK edge regardless of OE assertion timing
Synchronous self-timed writes On-chip write timing logic ensures reliable data capture without external write pulse width constraints or setup/hold dependencies
128K × 36 common I/O architecture Single bidirectional data bus simplifies PCB layout and reduces trace count vs. separate input/output buses in legacy designs
Flexible power domains Independent VDD (3.3 V) and VDDQ (2.5 V or 3.3 V) allow interfacing with lower-voltage FPGAs or ASICs while maintaining core stability

Applications

Packet Buffering in Switch ASICs Line Card Memory Subsystem

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly with switch fabric controller via 36-bit parallel bus.

Use Value: 4.0 ns tCO and NoBL™ architecture support deterministic 133 MHz pipeline staging, eliminating stall cycles during header rewrite operations.

Use Scenario: Serving as frame buffer and descriptor memory in telecom line cards handling OC-48/STM-16 traffic.

IC Role / Device Role / Timing Role: Depth-expanded memory bank using CE1/CE2/CE3 for 512K × 36 capacity, synchronized to system clock domain.

Use Value: Byte-write capability (BW[A:D]) enables efficient update of individual ATM cell headers without full-word overwrites.

Protocol Processing Engine Cache Real-Time Traffic Shaper Memory

Use Scenario: Holding temporary flow state and classification tables in deep packet inspection engines.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed concurrently by dual-port-capable controller logic.

Use Value: Linear/interleaved burst modes (via MODE pin) optimize sequential table walk performance for longest-prefix-match lookups.

Use Scenario: Buffering rate-shaping queues in QoS-aware routers enforcing strict priority scheduling.

IC Role / Device Role / Timing Role: Synchronous pipelined memory supporting simultaneous read (scheduler fetch) and write (packet arrival) on every clock.

Use Value: ZZ sleep mode (with external ground) reduces power during idle queue periods while preserving queued packet counts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1350D-133AXC Same 128K × 36 architecture but rated for commercial temperature range (0°C to +70°C) vs. industrial (–40°C to +85°C) Limited to non-extended ambient environments; lacks extended thermal qualification for base station or outdoor equipment Select only for cost-sensitive commercial-grade systems where industrial temp range is not required
AS7C34098B-133JCIN Pin-compatible 4-Mbit ZBT™ SRAM; identical 133 MHz speed grade but no ZZ sleep mode or MODE-selectable burst order Requires external OE timing management and fixed burst sequence; no low-power sleep capability Choose when legacy ZBT™ ecosystem compatibility is mandatory and sleep mode is unnecessary

Compared with CY7C1350D-133AXC and AS7C34098B-133JCIN, the CY7C1350G-133AXI uniquely combines industrial temperature rating, hardware-configurable burst order, and errata-managed ZZ sleep functionality - making it optimal for carrier-grade infrastructure requiring reliability, flexibility, and power-aware operation.

Availability

CY7C1350G-133AXI is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory subsystems, protocol processing engines, and real-time traffic shapers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1350G-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the full portfolio of high-performance memory and programmable solutions originally developed by Cypress.

The CY7C1350G belongs to Cypress' NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-throughput memory interfacing in telecom, networking, and real-time embedded systems demanding deterministic timing and burst efficiency.

FAQ

What is the required external connection for the ZZ pin on CY7C1350G-133AXI?

The ZZ pin (Pin 64 in TQFP) must be externally connected to ground per documented errata (page 19, Rev. *S). Although the pin has an internal pull-down, grounding ensures reliable disablement of sleep mode during normal operation and prevents unintended entry into low-power state that could disrupt memory access sequencing.

How does the MODE pin affect burst addressing behavior?

The MODE pin selects burst order: tied to GND enables linear burst (0,1,2,3), while tied to VDD or left floating enables interleaved burst (0,2,1,3). This setting determines how A[1:0] increments during ADV/LD-driven burst sequences and directly impacts cache line alignment efficiency in protocol processing applications.

Can CY7C1350G-133AXI operate with 2.5 V VDDQ while using 3.3 V VDD?

Yes - the device supports independent 3.3 V VDD (core) and 2.5 V VDDQ (I/O) supplies. This allows direct interfacing with 2.5 V FPGA I/O banks while maintaining full 133 MHz operation and 4.0 ns tCO, provided VDDQ stability and decoupling meet datasheet AC specifications (±3% tolerance, <100 mV ripple).

Is the CY7C1350G-133AXI pin-compatible with ZBT™ SRAMs?

Yes - it is explicitly designed to be pin-compatible and functionally equivalent to industry-standard ZBT™ devices (e.g., IDT 72V223, Integrated Device Technology), enabling drop-in replacement in existing ZBT™-based designs while adding NoBL™ latency advantages and enhanced power management features.

CY7C1350G-133AXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1350G-133AXI FAQ

1.How can I place an order for CY7C1350G-133AXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1350G-133AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1350G-133AXI reliable?

The price and inventory of CY7C1350G-133AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1350G-133AXI is usually 5 days.

3.What payment methods are accepted for CY7C1350G-133AXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1350G-133AXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1350G-133AXI?

CY7C1350G-133AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1350G-133AXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1350G-133AXI?

For technical support, including CY7C1350G-133AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1350G-133AXI requirements.

6.How does Aetrix verify that CY7C1350G-133AXI is sourced from the original manufacturer or authorized distributors?

All CY7C1350G-133AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1350G-133AXI meets industry standards.

7.What is the process for return or replacement of CY7C1350G-133AXI?

All CY7C1350G-133AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1350G-133AXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1350G-133AXI part is unused and in its original packaging.

Return procedure for CY7C1350G-133AXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1350G-133AXI Tags

  • CY7C1350G-133AXI
  • CY7C1350G-133AXI PDF
  • CY7C1350G-133AXI Datasheet
  • CY7C1350G-133AXI Specifications
  • CY7C1350G-133AXI Images
  • Infineon Technologies
  • Infineon Technologies CY7C1350G-133AXI
  • Buy CY7C1350G-133AXI
  • CY7C1350G-133AXI Price
  • CY7C1350G-133AXI Distributor
  • CY7C1350G-133AXI Supplier
  • CY7C1350G-133AXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER