Infineon Technologies CY7C1350G-133AXIT

Overview

CY7C1350G-133AXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations. It operates at 133 MHz with 4.0 ns clock-to-output delay, supports 3.3 V core and 2.5/3.3 V I/O supplies, and features byte-write capability, linear/interleaved burst modes, and ZZ sleep mode - deployed in network packet buffers and telecom line cards.

For engineers reviewing the CY7C1350G-133AXIT datasheet, CY7C1350G-133AXIT pinout, CY7C1350G-133AXIT application, or CY7C1350G-133AXIT equivalent, key selection criteria include synchronous self-timed write timing, 100-pin TQFP package compatibility, burst order control via MODE pin, and ZZ pin grounding requirement per errata.

Technical Context

The CY7C1350G-133AXIT implements a fully pipelined synchronous interface with all inputs registered on the rising edge of CLK and all outputs registered on the same edge, enabling true consecutive accesses. Its NoBL™ logic eliminates bus latency by internally managing output buffer timing - removing dependency on external OE control for data validity windows.

Burst addressing is driven by a two-bit on-chip counter using A[1:0], with sequence order (linear vs. interleaved) selected by the MODE strap pin. Write operations are synchronized and self-timed, qualified by WE and BW[A:D], while three chip enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW) support flexible bank decoding in multi-SRAM systems.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, lead-free, with exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L133PFI and IS61WV102436BLL-133TQLI, the CY7C1350G-133AXIT uniquely delivers parity I/O, dual-burst-mode flexibility, and errata-managed ZZ sleep - making it optimal for telecom and safety-critical buffering where data integrity and power control are co-constrained.

Availability

CY7C1350G-133AXIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, radar signal processing, and industrial PLC data exchange requiring stable component supply across extended production lifecycles.

Supply support for CY7C1350G-133AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and high-performance memory solutions.

The CY7C1350G belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered for deterministic, high-bandwidth memory subsystems in networking, telecommunications, and industrial real-time control equipment.

FAQ

What is the correct handling of the ZZ pin on CY7C1350G-133AXIT?

The ZZ pin must be externally connected to ground (GND) per documented errata - it cannot be left floating or pulled HIGH. This requirement applies regardless of whether sleep mode is used, as the internal pull-down is insufficient to guarantee data retention under all operating conditions. Failure to ground ZZ may result in unpredictable data loss during low-power transitions or temperature extremes.

Does CY7C1350G-133AXIT support both 2.5 V and 3.3 V I/O interfaces simultaneously?

No - VDDQ must be set to a single voltage: either 2.5 V or 3.3 V, not both. The device uses a unified VDDQ rail for all DQ and DQP I/O banks. Mixing voltages on VDDQ is electrically invalid and risks latch-up or I/O driver damage. System design must select one I/O voltage level and bias all associated bus drivers accordingly.

How does the ADV/LD pin affect burst operation timing?

ADV/LD must be driven LOW before the first clock edge of any new burst sequence to load the base address into the internal counter. If held HIGH during burst initiation, the device advances from the previous address - causing misaligned reads/writes. After a burst completes, ADV/LD must return LOW before the next access to ensure correct address capture, especially following chip deselect.

Can CY7C1350G-133AXIT be used in place of ZBT™-compatible SRAMs without redesign?

Yes - it is pin-compatible and functionally equivalent to standard ZBT™ SRAMs (e.g., IDT72V2115), but requires validation of MODE pin strapping and ZZ grounding. The NoBL™ architecture delivers identical timing behavior with simplified OE handling, though designers must verify burst order alignment and ensure ADV/LD sequencing matches existing ZBT™ firmware logic.