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Infineon Technologies CY7C1350G-200AXC

Part No.:
CY7C1350G-200AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1350G-200AXC.pdf
Description:
IC SRAM 4.5MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,842

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Product details

Overview

CY7C1350G-200AXC from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 3.3 V core supply, 2.5 V/3.3 V I/O supply, delivers 2.8 ns clock-to-output delay at 200 MHz, supports linear/interleaved burst modes, and features byte-write capability with four independent write-enable signals (BWA–BWD).

For engineers reviewing the CY7C1350G-200AXC datasheet, CY7C1350G-200AXC pinout, CY7C1350G-200AXC application, or CY7C1350G-200AXC equivalent, key selection criteria include pipelined read/write timing, ZZ sleep mode implementation, burst address sequencing control via MODE pin, and compatibility with ZBT™-based system designs requiring zero wait-state transitions.

Technical Context

The device implements fully synchronous, rising-edge-triggered input registration and output registration, with all control signals (CE1/CE2/CE3, WE, BW[A:D], ADV/LD, CEN) sampled on CLK's rising edge. Its NoBL™ logic eliminates bus latency by enabling back-to-back read/write operations without wait states, supported by on-chip self-timed write circuitry and synchronous burst counter.

It supports two burst orders-linear or interleaved-selected by the MODE strap pin, and includes asynchronous OE for output tristating and asynchronous ZZ input for non-time-critical sleep mode (with internal pull-down and mandatory external grounding per errata). All DQ and DQP lines are bidirectional and synchronously registered.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4 Mbit (128K × 36 bits), enabling 36-bit wide data paths for packet buffering and frame storage
Max Clock Frequency200 MHz - defines maximum sustained transaction rate for pipelined access sequences
tCO (Clock to Output)2.8 ns - determines minimum valid data hold time after clock edge for downstream latch capture
VDD / VDDQ3.3 V core / 2.5 V or 3.3 V I/O - allows interfacing with mixed-voltage ASIC/FPGA I/O banks
Burst LengthFixed 4-word burst - reduces address bus toggling and simplifies controller address generation logic
Write Latency1-cycle synchronous self-timed write - eliminates external write-strobe timing constraints
Sleep ModeZZ active-HIGH (externally grounded per errata) - reduces standby current to ≤40 mA while preserving data

Pinout & Package

Available in Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 119-ball BGA (14 × 22 × 2.4 mm) packages. Pin functions validated per Cypress document 38-05524 Rev. *S, including errata-driven grounding requirement for ZZ pin (Pin 64 in TQFP, Ball T7 in BGA).

Pin/TerminalCircuit RoleDesign Meaning
A[1:0]Address LSB inputsDrive 2-bit burst counter; determine burst sequence wrap behavior (linear/interleaved)
BW[A:D]Byte write enable inputsIndependently mask write data to each 9-bit byte lane (DQA–DQD + DQPA–DQPD)
ADV/LDBurst counter controlHIGH advances counter; LOW loads new base address - enables flexible burst initiation and restart
MODEBurst order selectLOW = linear burst; HIGH/floating = interleaved burst - sets memory access pattern for cache-line alignment
ZZAsynchronous sleep controlMust be externally tied to GND (errata); floating or HIGH violates sleep-mode specification
OEAsynchronous output enableTri-states DQ/DQP during write cycles regardless of OE state - prevents bus contention

Key Features

FeatureDesign Value
NoBL™ architectureEnables true back-to-back read/write with zero wait states - increases effective bandwidth in burst-intensive systems
Synchronous self-timed writesRemoves need for external write-strobe timing control - simplifies FPGA/ASIC interface logic design
Byte-selectable write (4×9-bit)Allows partial-word updates without read-modify-write cycles - critical for packet header manipulation
Dual-supply I/O (VDDQ)Supports 2.5 V or 3.3 V signaling - enables direct connection to legacy or low-voltage logic families
Pipelined chip enables (CE1/CE2/CE3)Enables seamless depth expansion across multiple SRAMs - maintains timing integrity in multi-bank configurations

Applications

Packet Buffering in Switch ASICsLine Card Memory in Telecom Routers

Use Scenario: Storing ingress/egress packet headers and payload fragments in high-speed Ethernet switching fabric.

IC Role / Device Role / Timing Role: Primary burst-access SRAM providing 36-bit-wide pipeline-aligned data storage with sub-3 ns tCO for deterministic forwarding latency.

Use Value: Eliminates wait states during rapid read/write alternation required for cut-through switching, sustaining >1.6 Gbps throughput at 200 MHz.

Use Scenario: Holding control-plane configuration tables and real-time statistics buffers in modular router line cards.

IC Role / Device Role / Timing Role: Synchronous memory node supporting burst reads for table lookups and byte writes for counter updates within shared memory pool.

Use Value: Byte-write capability avoids full-word overwrites; ZZ sleep mode reduces power during idle periods without data loss.

Frame Assembly in Media GatewaysPCI Express Endpoint Buffering

Use Scenario: Assembling fragmented VoIP/RTP frames from multiple DSP channels before transmission.

IC Role / Device Role / Timing Role: Common I/O SRAM acting as temporary frame staging buffer with synchronized write capture and burst-read delivery.

Use Value: 128K × 36 capacity accommodates up to 128 full 128-byte frames; linear burst mode matches sequential frame assembly flow.

Use Scenario: Acting as posted write buffer and completion queue memory between PCIe root complex and endpoint logic.

IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM interfacing directly with PCIe controller's AXI-like burst interface.

Use Value: 200 MHz operation aligns with PCIe Gen1/Gen2 timing budgets; CEN pin enables clock gating during link idle states.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72V2115L15PF3.3 V only (no VDDQ flexibility); 15 ns tCO; 133 MHz max frequencyLacks byte-write granularity; uses separate data-in/data-out pins instead of common I/OSelect when lower cost and relaxed timing suffice, and board layout supports separate I/O routing
ISSI IS61WV102436B2.5 V core; no ZZ sleep mode; 3.5 ns tCO at 166 MHz; no ADV/LD burst controlRelies on external address counter; lacks NoBL™ zero-wait-state capabilityChoose for simpler controller designs where burst management is handled externally and sleep mode is unnecessary

Compared with IDT72V2115L15PF and IS61WV102436B, CY7C1350G-200AXC provides superior throughput via 200 MHz operation and true NoBL™ pipelining, retains data integrity in low-power sleep mode, and offers finer-grained byte-write control essential for protocol-aware buffering.

Availability

CY7C1350G-200AXC is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in telecom routers, frame assembly in media gateways, and PCIe endpoint buffering requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1350G-200AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader focused on power systems, automotive, industrial, and IoT applications, formed through the acquisition of Cypress Semiconductor in 2020.

CY7C1350G belongs to Infineon's legacy high-performance synchronous SRAM product line, originally developed by Cypress to address zero-latency memory needs in high-speed communications infrastructure and real-time embedded systems.

FAQ

What is the correct handling of the ZZ pin for CY7C1350G-200AXC?

The ZZ pin must be externally connected to ground (GND) in all operating conditions, per documented errata on page 19 of datasheet 38-05524 Rev. *S. Although internally pulled down, failure to tie ZZ to GND risks undefined sleep-mode behavior and potential data retention issues. This applies identically to both TQFP (Pin 64) and BGA (Ball T7) packages.

How does the MODE pin affect burst addressing behavior?

The MODE pin selects burst order: tied to GND enables linear burst (0,1,2,3), while tied to VDD or left floating enables interleaved burst (0,2,4,6). The burst counter uses A[1:0] as LSBs and wraps within the 128K address space. This setting is sampled at power-up and remains static until reset or power cycle.

Can CY7C1350G-200AXC operate with 2.5 V VDDQ while using 3.3 V VDD?

Yes - the device supports independent 3.3 V VDD (core) and 2.5 V VDDQ (I/O) supplies. This allows direct interfacing with 2.5 V FPGAs or ASICs while maintaining full 200 MHz performance and 2.8 ns tCO. VDDQ must be stable before VDD during power-up, and both supplies must meet respective voltage tolerance specs (±5% for VDD, ±10% for VDDQ).

Is the CY7C1350G-200AXC pin-compatible with ZBT™ devices?

Yes - it is explicitly designed as pin-compatible and functionally equivalent to industry-standard ZBT™ SRAMs (e.g., IDT ZBT series), sharing identical pinouts, signal definitions, and timing protocols. This enables drop-in replacement in existing ZBT-based designs without PCB or firmware changes, provided VDDQ voltage and ZZ grounding requirements are met.

CY7C1350G-200AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
2.8 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1350G-200AXC FAQ

1.How can I place an order for CY7C1350G-200AXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1350G-200AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1350G-200AXC reliable?

The price and inventory of CY7C1350G-200AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1350G-200AXC is usually 5 days.

3.What payment methods are accepted for CY7C1350G-200AXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1350G-200AXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1350G-200AXC?

CY7C1350G-200AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1350G-200AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1350G-200AXC?

For technical support, including CY7C1350G-200AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1350G-200AXC requirements.

6.How does Aetrix verify that CY7C1350G-200AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1350G-200AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1350G-200AXC meets industry standards.

7.What is the process for return or replacement of CY7C1350G-200AXC?

All CY7C1350G-200AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1350G-200AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1350G-200AXC part is unused and in its original packaging.

Return procedure for CY7C1350G-200AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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