Infineon Technologies CY7C1350G-200AXCT
- Part No.:
- CY7C1350G-200AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1350G-200AXCT.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1350G-200AXCT from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom infrastructure. It operates at 3.3 V core supply (VDD), 2.5/3.3 V I/O supply (VDDQ), delivers 2.8 ns clock-to-output delay at 200 MHz, supports linear/interleaved burst modes, and features byte-write capability with four independent write-enable signals (BWA–BWD).
For engineers reviewing the CY7C1350G-200AXCT datasheet, CY7C1350G-200AXCT pinout, CY7C1350G-200AXCT application, or CY7C1350G-200AXCT equivalent, key selection criteria include its NoBL™ zero-wait-state back-to-back read/write performance, synchronous self-timed writes, ZZ sleep mode, 100-pin TQFP package compatibility, and support for depth expansion via three chip enables (CE1/CE2/CE3).
Technical Context
The CY7C1350G-200AXCT implements a fully synchronous, pipelined memory interface where all inputs (address, control, data) are registered on the rising edge of CLK, and all outputs are registered on the same edge. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write operations without wait states, supported by internal burst counters and ADV/LD-controlled address loading.
It uses dual power domains (VDD = 3.3 V for core logic, VDDQ = 2.5/3.3 V for I/O), includes asynchronous OE for output tristate control, and provides a dedicated ZZ input for non-time-critical sleep mode with data retention - requiring external grounding per errata. The MODE pin selects linear or interleaved burst order.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (128K × 36 bits), enabling 36-bit wide data paths for high-bandwidth packet buffering |
| Max Clock Frequency | 200 MHz - supports 5 ns clock period for real-time streaming applications |
| Access Time (tCO) | 2.8 ns - defines minimum clock-to-output delay for timing-critical read cycles |
| VDD / VDDQ | 3.3 V core / 2.5 V or 3.3 V I/O - allows interoperability with both 2.5 V and 3.3 V logic families |
| Burst Mode | Linear or interleaved - selectable via MODE pin; determines address increment pattern for burst reads/writes |
| Byte Write Control | Four independent BW[A:D] signals - enables selective 8-bit writes within 36-bit word without read-modify-write |
| Sleep Mode | ZZ input (asynchronous, active HIGH) - places device in low-power state with data retention; requires external GND tie per errata |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), lead-free, RoHS-compliant. Pinout validated per Cypress document 38-05524 Rev. *S (April 2019), including errata requiring ZZ (Pin 64) to be externally grounded.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[0:1] | Address Input | Two LSBs fed directly to internal 2-bit burst counter; determine burst sequence wrap behavior |
| BW[A:D] | Byte Write Enable | Active-LOW synchronous controls for four 8-bit segments of 36-bit data bus; qualified by WE |
| CE1, CE2, CE3 | Chip Enable | Three-level synchronous enable (CE1/CE3 active LOW, CE2 active HIGH) for bank selection and depth expansion |
| ADV/LD | Address Control | Advance (HIGH) or load new address (LOW); must be LOW after deselect to prepare for next access |
| ZZ | Sleep Control | Asynchronous active-HIGH sleep input; requires external GND connection per documented errata (Pin 64) |
| DQPA–DQPD | Data Parity I/O | Four parity bits synchronized with DQ[0:35]; controlled by corresponding BW[A:D] during writes |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Enables true back-to-back read/write operations with zero wait states, maximizing sustained bandwidth in burst-intensive systems |
| Synchronous Self-Timed Writes | Eliminates external write pulse timing constraints; internal logic automatically terminates write cycle after data registration |
| Configurable Burst Order | MODE pin selects linear (A[1:0] increment) or interleaved (bit-swap) addressing - matches processor/cache burst patterns |
| Independent Byte Write | Four BW[A:D] lines allow granular 8-bit updates within 36-bit word, reducing bus traffic and avoiding full-word overwrites |
| Tri-State Output Control | OE is asynchronous but masked during write data phase; outputs auto-tristate on deselect, preventing bus contention |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory in Telecom Routers |
|---|---|
Use Scenario: Storing variable-length Ethernet frames in high-speed switching fabric with minimal latency overhead. IC Role / Device Role / Timing Role: Primary data buffer SRAM interfacing directly to switch fabric controller; provides pipelined, zero-wait-state read/write for frame enqueue/dequeue. Use Value: 2.8 ns tCO and NoBL™ architecture enable sub-5 ns effective access time, supporting 200 MHz line-rate processing without pipeline stalls. | Use Scenario: Serving as shared packet memory across multiple DSP-based line cards in carrier-grade routers. IC Role / Device Role / Timing Role: Depth-expanded memory bank using CE1/CE2/CE3 for multi-port access arbitration; supports concurrent read/write from different ports. Use Value: Three chip enables and synchronous burst capability allow deterministic 4-word burst transfers aligned to DSP memory fetch cycles. |
| Backplane Interface Buffering | High-Speed Test Equipment Memory |
Use Scenario: Temporary storage of serialized backplane data streams (e.g., RapidIO, PCIe Gen2) before protocol translation. IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as elastic buffer between clock domains; MODE pin configured for interleaved burst to match backplane addressing. Use Value: Interleaved burst mode and 200 MHz operation ensure seamless alignment with 1.25 Gbps+ serial link framing without FIFO overflow. | Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) with deterministic timing capture windows. IC Role / Device Role / Timing Role: High-speed acquisition memory triggered by precise clock edges; ZZ pin used for power-gated idle periods between test sequences. Use Value: ZZ sleep mode reduces standby current to ≤40 mA while preserving data, extending thermal headroom during long test cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L15PF | 3.3 V, 4-Mbit (128K × 32), 15 ns access, no NoBL™, supports only linear burst | Lacks byte-write granularity and zero-wait-state capability; lower bandwidth ceiling | Select when cost sensitivity outweighs throughput requirements and 32-bit bus width suffices |
| ISSI IS61WV102436B | 3.3 V, 4-Mbit (128K × 36), 5.5 ns tCO, asynchronous OE, no ZZ sleep mode | Higher access latency, no integrated sleep control, no errata-mandated ZZ grounding | Prefer for simpler power management schemes where 2.8 ns tCO is not required |
Compared with IDT72V2115L15PF and IS61WV102436B, the CY7C1350G-200AXCT uniquely delivers 2.8 ns tCO with true NoBL™ back-to-back operation and configurable burst order - critical for latency-constrained telecom and test equipment designs where every nanosecond impacts system-level throughput.
Availability
CY7C1350G-200AXCT is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in telecom routers, backplane interface buffering, and high-speed test equipment requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1350G-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the full legacy product portfolio, including high-performance SRAMs developed under the Cypress brand.
The CY7C1350G belongs to Cypress' NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory subsystems in networking, telecom, and test instrumentation where deterministic burst performance is mandatory.
FAQ
What is the required connection for the ZZ pin on CY7C1350G-200AXCT?
The ZZ pin (Pin 64 in TQFP) must be externally connected to ground per documented errata on page 19 of datasheet 38-05524 Rev. *S. Although internally pulled down, grounding ensures reliable entry into and exit from sleep mode and prevents spurious wake-up events during voltage transients.
How does the ADV/LD pin function during burst operations?
ADV/LD controls whether the internal burst counter advances (HIGH) or loads a new base address (LOW). During burst reads/writes, it must remain HIGH to increment the counter; it must be driven LOW after device deselection to latch the next starting address for subsequent access.
Can CY7C1350G-200AXCT operate with mixed VDDQ voltages on the same device?
No - VDDQ is a single I/O supply rail. All DQ and DQP pins share the same VDDQ voltage, which must be set to either 2.5 V or 3.3 V (not both simultaneously). The device supports interface to either logic family, but not mixed-voltage signaling on one part.
Is the CY7C1350G-200AXCT pin-compatible with ZBT™ SRAMs?
Yes - the datasheet explicitly states pin compatibility and functional equivalence with industry-standard ZBT™ devices (e.g., IDT72V2115), enabling drop-in replacement in existing ZBT-based designs without PCB redesign or firmware changes.
CY7C1350G-200AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 2.8 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1350G-200AXCT FAQ
1.How can I place an order for CY7C1350G-200AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1350G-200AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1350G-200AXCT reliable?
The price and inventory of CY7C1350G-200AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1350G-200AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1350G-200AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1350G-200AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1350G-200AXCT?
CY7C1350G-200AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1350G-200AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1350G-200AXCT?
For technical support, including CY7C1350G-200AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1350G-200AXCT requirements.
6.How does Aetrix verify that CY7C1350G-200AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1350G-200AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1350G-200AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1350G-200AXCT?
All CY7C1350G-200AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1350G-200AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1350G-200AXCT part is unused and in its original packaging.
Return procedure for CY7C1350G-200AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1350G-200AXCT Tags

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