Infineon Technologies CY7C1350G-200AXI

Overview

CY7C1350G-200AXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations. It operates at 200 MHz with 2.8 ns clock-to-output delay, supports 3.3 V core supply and 2.5 V/3.3 V I/O supply, and features byte write capability, linear/interleaved burst modes, and ZZ sleep mode.

For engineers reviewing the CY7C1350G-200AXI datasheet, CY7C1350G-200AXI pinout, CY7C1350G-200AXI application, or CY7C1350G-200AXI equivalent, key selection criteria include its NoBL™-enabled pipelined timing, synchronous self-timed writes, 100-pin TQFP package compatibility, and support for burst depth expansion in networking and telecom data path buffers.

Technical Context

The CY7C1350G-200AXI implements a fully synchronous interface with all inputs registered on the rising edge of CLK and all outputs registered on the same edge. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers every clock cycle without wait states.

It uses three synchronous chip enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW) for bank selection, asynchronous OE for output control, and CEN to gate clock recognition. Burst addressing is controlled by ADV/LD and MODE pins, with A0/A1 feeding a two-bit counter that wraps on overflow in either linear or interleaved order.

Key Specifications

Pinout & Package

The CY7C1350G-200AXI is housed in a 100-pin Thin Quad Flat Package (TQFP) with 0.5 mm pitch, thermally optimized for industrial temperature operation (–40°C to +85°C). Pin 64 (ZZ) requires external grounding per errata notice.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L15PF and IS61WV102436B, the CY7C1350G-200AXI uniquely combines full NoBL™ latency elimination, configurable burst order, byte-write select, and ZZ sleep in a TQFP package - critical for space-constrained, power-aware telecom and networking designs.

Availability

CY7C1350G-200AXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor caching, and radar signal processing FIFOs requiring stable component supply across extended product lifecycles.

Supply support for CY7C1350G-200AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, technical support, and long-term supply commitment for legacy Cypress memory products.

The CY7C1350G belongs to Infineon's high-performance synchronous SRAM portfolio, engineered specifically for deterministic, low-latency memory subsystems in telecom infrastructure, enterprise networking, and real-time signal processing equipment.

FAQ

What is the required connection for the ZZ pin on CY7C1350G-200AXI?

The ZZ pin (Pin 64 in TQFP) must be externally connected to ground per documented errata. Although internally pulled down, grounding ensures reliable entry into and exit from sleep mode and prevents undefined behavior during power-up or voltage transitions. Leaving it floating may cause intermittent sleep activation or increased leakage current.

How does the ADV/LD pin function during burst read sequences?

ADV/LD controls burst counter advancement: when HIGH and CEN is active, it increments the internal 2-bit burst counter; when LOW, it loads a new base address from A0–A17. During continuous burst reads, ADV/LD remains HIGH to auto-advance; it must return LOW after deselect to prepare for next address load - critical for non-sequential access patterns.

Can CY7C1350G-200AXI operate with 2.5 V VDDQ while using 3.3 V VDD?

Yes - VDD (3.3 V ±0.3 V) powers the core logic, while VDDQ (2.5 V ±0.2 V or 3.3 V ±0.3 V) independently supplies the I/O drivers. This dual-supply design allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters, provided VDDQ stability is maintained within spec during all access phases including burst transitions.

Is the CY7C1350G-200AXI pin-compatible with ZBT™ SRAMs?

Yes - it is explicitly designed as pin-compatible and functionally equivalent to industry-standard ZBT™ SRAMs (e.g., IDT 72V2115), supporting identical control signal timing and address/data bus layouts. However, NoBL™ enhancements eliminate the need for OE coordination during writes, simplifying system timing closure compared to legacy ZBT implementations.