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Infineon Technologies CY7C1351F-100AC

Part No.:
CY7C1351F-100AC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1351F-100AC.pdf
Description:
IC SRAM 4.5MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,079

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Product details

Overview

CY7C1351F-100AC from Cypress Semiconductor is a 4-Mb (128K × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for zero-wait-state back-to-back read/write operations in high-speed memory subsystems. It operates at 100 MHz with 8.0 ns clock-to-output delay, supports byte write via BW[A:D], and uses 3.3V I/O with 2.5V/3.3V flexible VDDQ. It is deployed in network packet buffers and cache controllers requiring deterministic latency.

For engineers reviewing the CY7C1351F-100AC datasheet, CY7C1351F-100AC pinout, CY7C1351F-100AC application, or CY7C1351F-100AC equivalent, key selection criteria include burst order control (MODE pin), synchronous self-timed write timing, CEN-gated clock qualification, and TQFP-100 package compatibility with ZBT™-class systems.

Technical Context

The CY7C1351F-100AC implements a synchronous flow-through pipeline where all inputs-including address, WE, BW[A:D], ADV/LD, and CE signals-are registered on the rising edge of CLK, qualified by active-low CEN. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait states.

Burst operation is controlled by a 2-bit internal counter driven by A[1:0] and ADV/LD, with linear or interleaved sequence selected by the MODE strap pin. Output drivers are synchronously three-stated during write data capture, independent of OE, ensuring clean bus handoff between read and write phases.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4 Mb (128K × 36 bits), supporting 36-bit wide data paths without external multiplexing
Max Clock Frequency100 MHz - guarantees full-speed operation with tCDV ≤ 8.0 ns clock-to-output delay
I/O Voltage3.3V core-compatible with 2.5V/3.3V selectable VDDQ - enables interoperability with mixed-voltage ASIC/FPGA interfaces
Burst CapabilityLinear or interleaved 4-word burst - reduces address bus traffic and simplifies controller design for sequential access patterns
Write ControlSynchronous self-timed writes with BW[A:D] + WE - eliminates external write pulse timing constraints and supports atomic byte-level updates
Power ManagementZZ sleep mode with 40 mA standby current - preserves data integrity while reducing dynamic power during idle periods
Package100-pin TQFP (14 × 20 mm, 0.5 mm pitch) - JEDEC-standard footprint compatible with automated PCB assembly

Pinout & Package

Package: 100-lead Thin Quad Flat Package (TQFP), RoHS-compliant, body size 14 mm × 20 mm, lead pitch 0.5 mm.

PinCircuit RoleDesign Meaning
A[0:17]Synchronous Address InputLatched on rising CLK edge; A[1:0] feed 2-bit burst counter for linear/interleaved addressing
BW[A:D]Synchronous Byte Write SelectActive-low per-byte enable; combined with WE to perform selective 8-bit writes within 36-bit word
CE1, CE3Synchronous Chip Enable (active LOW)Three-input decode for bank selection; all must be active for access initiation
CE2Synchronous Chip Enable (active HIGH)Completes 3-signal chip select logic; enables depth expansion with standard TTL/CMOS levels
CLK, CENClock input / Clock EnableCEN masks CLK asynchronously; allows cycle extension without deselection or state loss
ADV/LDAdvance/Load ControlLOW loads new address; HIGH advances burst counter - decouples address update from chip enable timing
OEAsynchronous Output EnableControls I/O direction but is overridden during write data capture to prevent bus contention
ZZAsynchronous Sleep InputActive-HIGH entry into low-power snooze mode; requires 2-cycle recovery before next valid access
DQ[A:D][0:8]Bidirectional Data I/O36-bit common I/O bus with parity lines DQP[A:D]; automatically three-stated during write data phase
MODEBurst Order StrapGND = linear burst; VDD/floating = interleaved burst - sets burst address sequence without register programming

Key Features

FeatureDesign Value
No Bus Latency™ ArchitectureEnables true back-to-back read/write cycles with no wait states - increases effective bandwidth by up to 2× vs. conventional synchronous SRAMs
Registered Flow-through InterfaceAll control and address signals registered on CLK edge - eliminates setup/hold timing violations at 100 MHz and simplifies FPGA interface timing closure
Byte-Write with Self-Timed WritesEliminates external write pulse generation; BW[A:D] + WE define write granularity without additional control logic
Configurable Burst OrderHardware-mode-selectable linear or interleaved burst via MODE pin - matches legacy ZBT™ or modern cache line requirements
Synchronous Three-State ControlOutput drivers automatically enter high-impedance during write data capture - prevents bus contention without OE coordination

Applications

Network Packet BufferHigh-Speed Cache Controller

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: Primary data buffer providing deterministic 8.0 ns read access and zero-wait-state write turnaround for frame reassembly.

Use Value: Eliminates pipeline stalls during rapid read-modify-write of packet headers, improving switch throughput by >15% under bursty traffic.

Use Scenario: Serving as L2 cache tag/data RAM in embedded RISC processors with burst-capable bus interfaces.

IC Role / Device Role / Timing Role: Synchronous flow-through SRAM delivering 36-bit cache lines on every clock cycle with MODE-configured interleaved burst.

Use Value: Matches CPU burst length and address stride, reducing average memory access time by 3.2 ns versus non-burst alternatives.

Telecom Line Card MemoryTest Equipment Pattern Generator

Use Scenario: Holding real-time jitter measurement buffers and protocol analyzer trace data in SONET/SDH line cards.

IC Role / Device Role / Timing Role: High-reliability SRAM with ZZ sleep mode for power-gating during idle intervals while preserving trace history.

Use Value: Reduces standby power by 65% vs. standard SRAM during maintenance windows without compromising data retention.

Use Scenario: Storing multi-channel digital stimulus patterns in automated test equipment requiring precise timing alignment.

IC Role / Device Role / Timing Role: Deterministic-latency memory with CEN-controlled clock gating to synchronize pattern playback across 4 parallel DQ buses.

Use Value: Enables sub-nanosecond skew control between channels by eliminating asynchronous output enable delays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72V2115L10PF100 MHz, 128K × 36, but uses QDR-II architecture with separate read/write ports and no MODE-strapped burst orderRequires dual-port controller logic; lacks ZZ sleep mode and byte-write simplicityPreferred only when simultaneous read/write concurrency is required over flow-through determinism
ISSI IS61WV12836B100 MHz, 128K × 36, but asynchronous OE and no CEN clock gating - higher timing margin risk at max frequencyNeeds external write pulse generation; no burst counter or ADV/LD control - limits sequential access efficiencyLower-cost option for non-critical timing applications where controller handles burst sequencing

Compared with IDT72V2115L10PF and IS61WV12836B, the CY7C1351F-100AC uniquely combines NoBL™ zero-latency pipelining, hardware-configurable burst order, and integrated self-timed writes - making it optimal for FPGA-based systems needing minimal glue logic and guaranteed 8.0 ns read access.

Availability

CY7C1351F-100AC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed cache controller designs requiring stable component supply, long-term lifecycle support, and JEDEC-standard TQFP packaging.

Supply support for CY7C1351F-100AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial and communications infrastructure.

The CY7C1351F belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace ZBT™ devices in systems demanding deterministic, wait-state-free memory access with simplified timing closure.

FAQ

What is the function of the MODE pin on CY7C1351F-100AC?

The MODE pin selects burst address sequence: tied to GND for linear burst (00→01→10→11), or to VDD/floating for interleaved burst (00→01→10→11 → 01→00→11→10). It is a static strap pin-no register writes needed-and directly configures the internal 2-bit burst counter behavior without software overhead.

How does the CY7C1351F-100AC handle bus contention during write operations?

During the data portion of any write cycle, DQ and DQP lines are synchronously forced into high-impedance regardless of OE state. This hardware-enforced three-state action prevents bus contention even if OE remains active, ensuring safe bidirectional I/O sharing without external bus transceivers or timing-critical OE coordination.

Can CY7C1351F-100AC operate with 2.5V I/O voltage?

Yes-VDDQ supports 2.5V ±0.2V or 3.3V ±0.3V operation, allowing direct interfacing with 2.5V FPGAs or ASICs. Core VDD remains fixed at 3.3V. The device meets AC/DC specifications across both VDDQ ranges, and no configuration register changes are required when switching VDDQ voltage.

What happens when CEN is deasserted during an active memory access?

Deasserting CEN (driving HIGH) masks the CLK signal and freezes all internal registers and state machines without deselecting the device. The previous clock cycle is extended indefinitely, preserving address, control, and data register contents until CEN is reasserted-enabling precise pause/resume control for debug or power management without losing context.

CY7C1351F-100AC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1351F-100AC FAQ

1.How can I place an order for CY7C1351F-100AC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1351F-100AC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1351F-100AC reliable?

The price and inventory of CY7C1351F-100AC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1351F-100AC is usually 5 days.

3.What payment methods are accepted for CY7C1351F-100AC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1351F-100AC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1351F-100AC?

CY7C1351F-100AC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1351F-100AC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1351F-100AC?

For technical support, including CY7C1351F-100AC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1351F-100AC requirements.

6.How does Aetrix verify that CY7C1351F-100AC is sourced from the original manufacturer or authorized distributors?

All CY7C1351F-100AC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1351F-100AC meets industry standards.

7.What is the process for return or replacement of CY7C1351F-100AC?

All CY7C1351F-100AC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1351F-100AC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1351F-100AC part is unused and in its original packaging.

Return procedure for CY7C1351F-100AC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1351F-100AC Tags

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