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Infineon Technologies CY7C1351G-100AXC
- Part No.:
- CY7C1351G-100AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1351G-100AXC.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,100
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Product details
Overview
CY7C1351G-100AXC from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous flow-through SRAM with NoBL™ architecture, supporting true back-to-back read/write operations at 100 MHz with zero wait states. It features 2.5 V/3.3 V I/O power supply (VDDQ), 8.0 ns clock-to-output delay, and 100-pin TQFP packaging. Designed for high-throughput memory buffering in network packet processors and telecom line cards.
For engineers reviewing the CY7C1351G-100AXC datasheet, CY7C1351G-100AXC pinout, CY7C1351G-100AXC application, or CY7C1351G-100AXC equivalent, key selection criteria include burst mode configuration (linear/interleaved via MODE pin), byte-write capability using BW[A:D], synchronous self-timed write control, and ZZ sleep-mode support with external ground requirement on Pin 64.
Technical Context
The CY7C1351G-100AXC implements a synchronous, pipelined flow-through architecture where all inputs (address, WE, BW[A:D], CE1–CE3, ADV/LD, CEN) are registered on the rising edge of CLK. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait-state insertion, with data transferred on every clock cycle.
Burst addressing is controlled by a two-bit internal counter driven by A[1:0] and ADV/LD, with sequence order determined by the MODE strap pin (GND = linear, VDD/floating = interleaved). Output drivers are synchronously tristated during write-data phases, and OE operates asynchronously but is masked during writes and deselect transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (128K × 36) - supports 36-bit wide data paths for high-bandwidth buffering in packet-switching ASICs. |
| Max clock frequency | 100 MHz - enables sustained 100 MT/s throughput with no wait states in back-to-back read/write sequences. |
| Access time (tCDV) | 8.0 ns - defines maximum clock-to-valid-output delay for timing-critical synchronous interfaces. |
| I/O voltage | 2.5 V / 3.3 V (VDDQ) - allows interoperability with both legacy 3.3 V and low-voltage 2.5 V logic families. |
| Power consumption | 205 mA max operating current - optimized for mid-range throughput applications balancing speed and thermal load. |
| Burst capability | Linear or interleaved 4-word burst - selectable via MODE pin to match host processor's burst ordering requirements. |
| Sleep mode | ZZ input (Pin 64) - active-HIGH sleep signal requiring external ground connection per errata; preserves data integrity with reduced power draw. |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[1:0] | Address inputs | Two LSBs fed directly to internal 2-bit burst counter; sampled on rising CLK edge for address latching. |
| BW[A:D] | Byte write select | Active-LOW synchronous controls for selective 8-bit writes within 36-bit word; qualified with WE. |
| CLK | Clock input | Rising-edge-triggered master clock; qualified by CEN; drives all synchronous registers and burst logic. |
| CE1, CE2, CE3 | Chip enable group | Three synchronous enables (CE1/CE3 active-LOW, CE2 active-HIGH) for flexible bank decoding and depth expansion. |
| OE | Output enable | Asynchronous active-LOW control; masked during write-data phase to prevent bus contention. |
| ZZ | Sleep mode input | Asynchronous active-HIGH sleep control; Pin 64 must be externally grounded per documented errata to ensure reliable operation. |
| MODE | Burst order selector | Strap pin determining burst sequence: GND = linear, VDD/floating = interleaved; sets burst counter behavior. |
| DQs / DQP[A:D] | Data I/O / parity I/O | 36 bidirectional data lines + 4 parity lines; direction controlled by OE and internal logic; automatically tristated during writes. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Enables unlimited true back-to-back read/write operations with data transferred on every clock cycle-eliminates pipeline stalls in high-speed memory subsystems. |
| Internally self-timed output buffer control | Removes need for external OE timing coordination; output enable is managed synchronously by internal logic, simplifying interface timing design. |
| Registered inputs with clock enable (CEN) | CEN suspends clock recognition without deselection, allowing cycle extension while preserving internal state-critical for burst boundary alignment. |
| Synchronous self-timed writes | On-chip write timing logic eliminates external write-pulse width constraints; ensures reliable data capture across voltage/temperature variations. |
| Byte write capability with BW[A:D] | Supports partial-word writes to any 8-bit segment of the 36-bit data bus-reduces unnecessary memory overwrites and improves system efficiency. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-speed flow-through SRAM acting as first-level packet buffer, interfacing directly with SerDes and MAC controllers. Use Value: 100 MHz zero-wait-state operation sustains full-line-rate throughput; NoBL™ architecture prevents pipeline bubbles during mixed read/write traffic. |
Use Scenario: Frame buffering in OC-48/STM-16 line cards requiring deterministic access to 36-bit-wide data streams. IC Role / Device Role / Timing Role: Synchronous burst SRAM providing aligned 4-word reads/writes to match SONET/SDH framing logic. Use Value: Linear/interleaved burst modes align with DSP-oriented or RISC-based controller burst patterns; VDDQ flexibility eases interface to mixed-voltage FPGA I/O banks. |
| Baseband Processing Cache | Industrial Real-Time Controller Memory |
|
Use Scenario: Temporary storage of channelized voice/data samples in wireless base station transceivers before FFT or encoding. IC Role / Device Role / Timing Role: Low-latency memory buffer between ADC/DAC interfaces and digital signal processors. Use Value: 8.0 ns tCDV meets sub-10 ns timing closure targets; ZZ sleep mode reduces idle power by >50% during frame gaps. |
Use Scenario: Deterministic instruction/data storage in safety-critical PLCs and motion controllers requiring guaranteed access timing. IC Role / Device Role / Timing Role: Synchronous SRAM serving as deterministic scratchpad memory for real-time firmware execution. Use Value: Registered inputs and CEN-controlled clock gating ensure predictable setup/hold margins under EMI stress; 100-pin TQFP supports industrial-grade PCB layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PF | 3.3 V only VDDQ; no ZZ sleep pin; 100-pin TQFP; 133 MHz max (6.5 ns tCDV) | Lacks dedicated sleep mode; requires external power management for low-power states | Select when higher speed (133 MHz) is required and sleep mode is handled externally. |
| ISSI IS61WV102436B | 2.5 V/3.3 V VDDQ; no MODE pin (fixed linear burst); 100-pin TQFP; 100 MHz, 8.0 ns tCDV | Fixed burst order limits compatibility with interleaved-burst host processors | Select when burst order is fixed and cost sensitivity outweighs configurability needs. |
Compared with IDT72V2115L10PF and IS61WV102436B, the CY7C1351G-100AXC uniquely combines configurable burst order (via MODE), integrated ZZ sleep control with documented grounding requirement, and NoBL™-guaranteed zero-wait-state operation-making it optimal for systems demanding both flexibility and deterministic timing.
Availability
CY7C1351G-100AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial real-time controller memory requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1351G-100AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including NoBL™ SRAMs, with global manufacturing, quality assurance, and technical support infrastructure.
The CY7C1351G belongs to Cypress' NoBL™ synchronous SRAM product line, engineered specifically for zero-latency memory subsystems in networking, telecommunications, and real-time embedded systems where back-to-back read/write throughput is critical.
FAQ
What is the required connection for the ZZ pin on CY7C1351G-100AXC?
The ZZ pin (Pin 64) must be externally connected to ground per documented errata on page 19 of the datasheet. Although the pin has an internal pull-down, reliable sleep-mode entry and data retention require a hard ground connection. Leaving it floating or tying it to VDD may cause undefined behavior or failure to enter sleep mode correctly.
How does the MODE pin affect burst addressing behavior?
The MODE pin selects burst order: tied to GND enables linear burst (0,1,2,3), while tied to VDD or left floating enables interleaved burst (0,2,1,3). This setting is sampled at power-up and remains static during operation; changing it dynamically is not supported and may corrupt burst sequencing.
Can CY7C1351G-100AXC operate with mixed VDD (core) and VDDQ (I/O) voltages?
Yes - VDD is fixed at 3.3 V for core logic, while VDDQ supports either 2.5 V or 3.3 V to interface with corresponding I/O voltage domains. This dual-voltage I/O capability allows direct connection to FPGAs or ASICs with mixed I/O standards without level-shifting circuitry.
Is the CY7C1351G-100AXC pin-compatible with ZBT™ SRAMs?
Yes - the device is explicitly designed to be pin-compatible and functionally equivalent to industry-standard ZBT™ SRAMs (e.g., IDT ZBT series), enabling drop-in replacement in existing designs without PCB or firmware changes, provided timing margins accommodate the 8.0 ns tCDV specification.
CY7C1351G-100AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1351G-100AXC FAQ
1.How can I place an order for CY7C1351G-100AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1351G-100AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1351G-100AXC reliable?
The price and inventory of CY7C1351G-100AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1351G-100AXC is usually 5 days.
3.What payment methods are accepted for CY7C1351G-100AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1351G-100AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1351G-100AXC?
CY7C1351G-100AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1351G-100AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1351G-100AXC?
For technical support, including CY7C1351G-100AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1351G-100AXC requirements.
6.How does Aetrix verify that CY7C1351G-100AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1351G-100AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1351G-100AXC meets industry standards.
7.What is the process for return or replacement of CY7C1351G-100AXC?
All CY7C1351G-100AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1351G-100AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1351G-100AXC part is unused and in its original packaging.
Return procedure for CY7C1351G-100AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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