Infineon Technologies CY7C1351G-100AXCT
- Part No.:
- CY7C1351G-100AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1351G-100AXCT.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1351G-100AXCT from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for zero-wait-state, back-to-back read/write operations in high-bandwidth memory subsystems. It operates at 100 MHz with 8.0 ns clock-to-output delay, supports 2.5 V/3.3 V I/O (VDDQ), and features registered inputs, byte write capability, and linear/interleaved burst modes.
For engineers reviewing the CY7C1351G-100AXCT datasheet, CY7C1351G-100AXCT pinout, CY7C1351G-100AXCT application, or CY7C1351G-100AXCT equivalent, key selection criteria include synchronous burst timing, 100-pin TQFP package compatibility, ZZ sleep mode control, and functional equivalence to ZBT™ SRAMs in telecom and networking buffer designs.
Technical Context
The CY7C1351G-100AXCT implements a fully pipelined, synchronous interface with rising-edge clock sampling for all control and address inputs. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait states, using an internal burst counter driven by A0/A1 and controlled by ADV/LD and MODE pins.
It integrates synchronous self-timed write circuitry, three chip enables (CE1 active-low, CE2 active-high, CE3 active-low), asynchronous OE, and dedicated byte write selects (BWA–BWD). Output drivers are synchronously tristated during write data phases to prevent bus contention, and ZZ pin enables low-power sleep mode with data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (128K × 36 bits), supporting 36-bit wide data paths for high-throughput buffering |
| Max Clock Frequency | 100 MHz - enables sustained 100 MT/s throughput with no cycle gaps |
| Access Time (tCDV) | 8.0 ns - defines maximum clock-to-valid-output delay for timing-critical read paths |
| VDDQ Supply Range | 2.5 V or 3.3 V - allows interoperability with mixed-voltage ASIC/FPGA I/O domains |
| Burst Mode Control | MODE pin strapping - selects linear or interleaved burst order per JEDEC-standard addressing |
| Sleep Mode | Asynchronous ZZ input - reduces standby current to ≤40 mA while preserving data integrity |
| Package | 100-pin TQFP (14 × 20 × 1.4 mm) - surface-mount compatible with standard PCB assembly processes |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), RoHS-compliant, body size 14 mm × 20 mm × 1.4 mm, lead pitch 0.5 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | Synchronous, rising-edge sampled; A0/A1 drive internal 2-bit burst counter |
| BWA–BWD | Byte Write Enables | Active-low synchronous controls for independent 9-bit byte writes within 36-bit word |
| CLK, CEN | Clock & Enable | CLK qualified by CEN; CEN HIGH extends previous cycle without deselecting device |
| CE1, CE2, CE3 | Chip Enables | Three-signal decode (CE1↓, CE2↑, CE3↓) enables depth expansion with bank isolation |
| OE | Output Enable | Asynchronous, active-low; masked during write data phase to enforce automatic tristate |
| ZZ | Sleep Control | Asynchronous active-high; requires external GND connection per errata (Pin 64) |
| DQPA–DQPD | Data Parity I/O | Four 9-bit parity lines, functionally identical to DQs and controlled by matching BWx signals |
| VDDQ | I/O Power | Separate 2.5 V/3.3 V supply decoupled from core VDD, enabling voltage translation |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables true back-to-back read/write transitions with zero wait states, increasing effective bandwidth by ≥30% vs. conventional synchronous SRAMs |
| Registered Flow-Through Interface | All inputs latched on CLK rise; output data valid within fixed tCDV (8.0 ns), simplifying timing closure in FPGA-ASIC interconnects |
| Configurable Burst Order | MODE pin selects linear or interleaved burst sequence - matches legacy ZBT™ or modern cache-line access patterns |
| Synchronous Self-Timed Writes | On-chip write timing logic eliminates external write pulse width constraints and simplifies controller design |
| Low-Power Sleep Mode (ZZ) | Reduces active standby current to ≤40 mA while retaining memory contents - critical for power-managed telecom line cards |
Applications
| Telecom Line Card Buffering | Network Packet Switching |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit line interface units. IC Role / Device Role / Timing Role: High-speed, low-latency packet buffer SRAM interfacing directly with MAC-layer ASICs via 36-bit synchronous bus. Use Value: 100 MHz burst operation and zero-wait-state writes enable full wire-speed buffering without packet loss under bursty traffic loads. | Use Scenario: Temporary storage of header metadata and payload fragments during cut-through switching in Layer 2/3 switches. IC Role / Device Role / Timing Role: Dual-port accessible memory block used for parallel read/write of packet descriptors and payload segments. Use Value: Registered inputs and deterministic 8.0 ns tCDV allow precise timing alignment with switch fabric clocks, reducing jitter in forwarding latency. |
| Baseband Processing in 4G/LTE Radio Units | Industrial Real-Time Data Acquisition |
Use Scenario: Holding intermediate FFT/IFFT results and channel estimation coefficients in LTE eNodeB baseband processing chains. IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as ping-pong buffer between DSP cores and RF front-end interfaces. Use Value: Byte-write capability (BWA–BWD) enables efficient partial updates of coefficient tables without full-word overwrites, saving power and bus cycles. | Use Scenario: Capturing high-resolution sensor streams (e.g., 16-bit ADC arrays) in programmable logic controllers with deterministic sampling intervals. IC Role / Device Role / Timing Role: Time-stamped data staging memory synchronized to real-time OS tick and FPGA logic clocks. Use Value: ZZ sleep mode allows dynamic power gating between acquisition bursts, reducing average system power by >45% in duty-cycled monitoring applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PF | 100 MHz, 128K × 36, but uses QDR-II+ interface with separate read/write clocks and no ZZ sleep pin | Lacks integrated sleep mode; requires external power management for low-power states | Prefer when dual-clock domain separation is required and sleep mode is not needed |
| ISSI IS61WV102436B | 100 MHz, 128K × 36, but lacks NoBL™ architecture - inserts one-cycle gap between read/write transitions | Lower peak throughput in write-read alternation; higher timing margin required for controller design | Prefer for cost-sensitive designs where strict zero-wait-state operation is not mandatory |
Compared with IDT72V2115L10PF and IS61WV102436B, the CY7C1351G-100AXCT uniquely delivers zero-wait-state back-to-back operation with integrated sleep control, making it optimal for latency-constrained telecom buffers where both throughput and dynamic power scaling matter.
Availability
CY7C1351G-100AXCT is available at Aetrix Electronics and suitable for telecom infrastructure, network switching, and industrial real-time data acquisition requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for CY7C1351G-100AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.
The CY7C1351G belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered for ultra-low-latency, high-reliability memory buffering in carrier-grade communications equipment and mission-critical embedded systems.
FAQ
What is the function of the MODE pin on CY7C1351G-100AXCT?
The MODE pin is a static strap input that configures the on-chip burst counter's address sequence. When tied to GND, it selects linear burst order (0,1,2,3); when tied to VDD or left floating, it selects interleaved burst order (0,2,1,3). This setting must be stable before initialization and remains fixed during operation - it is not dynamically reconfigurable.
Why must the ZZ pin be externally connected to ground?
Per documented errata (page 19, Rev. *R), Pin 64 (ZZ) requires external grounding to ensure reliable operation. Although the pin has an internal pull-down, unconnected or floating ZZ causes undefined sleep-mode behavior and potential data corruption during power transitions. Grounding eliminates this risk and guarantees deterministic low-power state entry/exit.
How does the CY7C1351G-100AXCT handle bus contention during write cycles?
The device automatically tristates all DQ and DQP outputs during the data portion of any write sequence - regardless of OE state - using synchronous internal control logic. This prevents bus contention without requiring external bus transceivers or OE timing coordination, simplifying PCB layout and reducing system-level timing constraints.
Is CY7C1351G-100AXCT pin-compatible with ZBT™ SRAMs?
Yes - the CY7C1351G-100AXCT is explicitly designed to be pin-compatible and functionally equivalent to industry-standard ZBT™ SRAMs (e.g., IDT72V2115 series), including identical 100-pin TQFP footprint, signal naming, and burst timing behavior. No PCB redesign is needed for drop-in replacement in existing ZBT™-based systems.
CY7C1351G-100AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1351G-100AXCT FAQ
1.How can I place an order for CY7C1351G-100AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1351G-100AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1351G-100AXCT reliable?
The price and inventory of CY7C1351G-100AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1351G-100AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1351G-100AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1351G-100AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1351G-100AXCT?
CY7C1351G-100AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1351G-100AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1351G-100AXCT?
For technical support, including CY7C1351G-100AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1351G-100AXCT requirements.
6.How does Aetrix verify that CY7C1351G-100AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1351G-100AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1351G-100AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1351G-100AXCT?
All CY7C1351G-100AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1351G-100AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1351G-100AXCT part is unused and in its original packaging.
Return procedure for CY7C1351G-100AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1351G-100AXCT Tags

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M24C02-FMC6TG
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AT24C04C-SSHM-T
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