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Infineon Technologies CY7C1351G-100AXCT

Part No.:
CY7C1351G-100AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1351G-100AXCT.pdf
Description:
IC SRAM 4.5MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,726

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Product details

Overview

CY7C1351G-100AXCT from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for zero-wait-state, back-to-back read/write operations in high-bandwidth memory subsystems. It operates at 100 MHz with 8.0 ns clock-to-output delay, supports 2.5 V/3.3 V I/O (VDDQ), and features registered inputs, byte write capability, and linear/interleaved burst modes.

For engineers reviewing the CY7C1351G-100AXCT datasheet, CY7C1351G-100AXCT pinout, CY7C1351G-100AXCT application, or CY7C1351G-100AXCT equivalent, key selection criteria include synchronous burst timing, 100-pin TQFP package compatibility, ZZ sleep mode control, and functional equivalence to ZBT™ SRAMs in telecom and networking buffer designs.

Technical Context

The CY7C1351G-100AXCT implements a fully pipelined, synchronous interface with rising-edge clock sampling for all control and address inputs. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait states, using an internal burst counter driven by A0/A1 and controlled by ADV/LD and MODE pins.

It integrates synchronous self-timed write circuitry, three chip enables (CE1 active-low, CE2 active-high, CE3 active-low), asynchronous OE, and dedicated byte write selects (BWA–BWD). Output drivers are synchronously tristated during write data phases to prevent bus contention, and ZZ pin enables low-power sleep mode with data retention.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4 Mbit (128K × 36 bits), supporting 36-bit wide data paths for high-throughput buffering
Max Clock Frequency100 MHz - enables sustained 100 MT/s throughput with no cycle gaps
Access Time (tCDV)8.0 ns - defines maximum clock-to-valid-output delay for timing-critical read paths
VDDQ Supply Range2.5 V or 3.3 V - allows interoperability with mixed-voltage ASIC/FPGA I/O domains
Burst Mode ControlMODE pin strapping - selects linear or interleaved burst order per JEDEC-standard addressing
Sleep ModeAsynchronous ZZ input - reduces standby current to ≤40 mA while preserving data integrity
Package100-pin TQFP (14 × 20 × 1.4 mm) - surface-mount compatible with standard PCB assembly processes

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), RoHS-compliant, body size 14 mm × 20 mm × 1.4 mm, lead pitch 0.5 mm.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address InputsSynchronous, rising-edge sampled; A0/A1 drive internal 2-bit burst counter
BWA–BWDByte Write EnablesActive-low synchronous controls for independent 9-bit byte writes within 36-bit word
CLK, CENClock & EnableCLK qualified by CEN; CEN HIGH extends previous cycle without deselecting device
CE1, CE2, CE3Chip EnablesThree-signal decode (CE1↓, CE2↑, CE3↓) enables depth expansion with bank isolation
OEOutput EnableAsynchronous, active-low; masked during write data phase to enforce automatic tristate
ZZSleep ControlAsynchronous active-high; requires external GND connection per errata (Pin 64)
DQPA–DQPDData Parity I/OFour 9-bit parity lines, functionally identical to DQs and controlled by matching BWx signals
VDDQI/O PowerSeparate 2.5 V/3.3 V supply decoupled from core VDD, enabling voltage translation

Key Features

FeatureDesign Value
No Bus Latency™ ArchitectureEnables true back-to-back read/write transitions with zero wait states, increasing effective bandwidth by ≥30% vs. conventional synchronous SRAMs
Registered Flow-Through InterfaceAll inputs latched on CLK rise; output data valid within fixed tCDV (8.0 ns), simplifying timing closure in FPGA-ASIC interconnects
Configurable Burst OrderMODE pin selects linear or interleaved burst sequence - matches legacy ZBT™ or modern cache-line access patterns
Synchronous Self-Timed WritesOn-chip write timing logic eliminates external write pulse width constraints and simplifies controller design
Low-Power Sleep Mode (ZZ)Reduces active standby current to ≤40 mA while retaining memory contents - critical for power-managed telecom line cards

Applications

Telecom Line Card BufferingNetwork Packet Switching

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit line interface units.

IC Role / Device Role / Timing Role: High-speed, low-latency packet buffer SRAM interfacing directly with MAC-layer ASICs via 36-bit synchronous bus.

Use Value: 100 MHz burst operation and zero-wait-state writes enable full wire-speed buffering without packet loss under bursty traffic loads.

Use Scenario: Temporary storage of header metadata and payload fragments during cut-through switching in Layer 2/3 switches.

IC Role / Device Role / Timing Role: Dual-port accessible memory block used for parallel read/write of packet descriptors and payload segments.

Use Value: Registered inputs and deterministic 8.0 ns tCDV allow precise timing alignment with switch fabric clocks, reducing jitter in forwarding latency.

Baseband Processing in 4G/LTE Radio UnitsIndustrial Real-Time Data Acquisition

Use Scenario: Holding intermediate FFT/IFFT results and channel estimation coefficients in LTE eNodeB baseband processing chains.

IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as ping-pong buffer between DSP cores and RF front-end interfaces.

Use Value: Byte-write capability (BWA–BWD) enables efficient partial updates of coefficient tables without full-word overwrites, saving power and bus cycles.

Use Scenario: Capturing high-resolution sensor streams (e.g., 16-bit ADC arrays) in programmable logic controllers with deterministic sampling intervals.

IC Role / Device Role / Timing Role: Time-stamped data staging memory synchronized to real-time OS tick and FPGA logic clocks.

Use Value: ZZ sleep mode allows dynamic power gating between acquisition bursts, reducing average system power by >45% in duty-cycled monitoring applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72V2115L10PF100 MHz, 128K × 36, but uses QDR-II+ interface with separate read/write clocks and no ZZ sleep pinLacks integrated sleep mode; requires external power management for low-power statesPrefer when dual-clock domain separation is required and sleep mode is not needed
ISSI IS61WV102436B100 MHz, 128K × 36, but lacks NoBL™ architecture - inserts one-cycle gap between read/write transitionsLower peak throughput in write-read alternation; higher timing margin required for controller designPrefer for cost-sensitive designs where strict zero-wait-state operation is not mandatory

Compared with IDT72V2115L10PF and IS61WV102436B, the CY7C1351G-100AXCT uniquely delivers zero-wait-state back-to-back operation with integrated sleep control, making it optimal for latency-constrained telecom buffers where both throughput and dynamic power scaling matter.

Availability

CY7C1351G-100AXCT is available at Aetrix Electronics and suitable for telecom infrastructure, network switching, and industrial real-time data acquisition requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1351G-100AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.

The CY7C1351G belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered for ultra-low-latency, high-reliability memory buffering in carrier-grade communications equipment and mission-critical embedded systems.

FAQ

What is the function of the MODE pin on CY7C1351G-100AXCT?

The MODE pin is a static strap input that configures the on-chip burst counter's address sequence. When tied to GND, it selects linear burst order (0,1,2,3); when tied to VDD or left floating, it selects interleaved burst order (0,2,1,3). This setting must be stable before initialization and remains fixed during operation - it is not dynamically reconfigurable.

Why must the ZZ pin be externally connected to ground?

Per documented errata (page 19, Rev. *R), Pin 64 (ZZ) requires external grounding to ensure reliable operation. Although the pin has an internal pull-down, unconnected or floating ZZ causes undefined sleep-mode behavior and potential data corruption during power transitions. Grounding eliminates this risk and guarantees deterministic low-power state entry/exit.

How does the CY7C1351G-100AXCT handle bus contention during write cycles?

The device automatically tristates all DQ and DQP outputs during the data portion of any write sequence - regardless of OE state - using synchronous internal control logic. This prevents bus contention without requiring external bus transceivers or OE timing coordination, simplifying PCB layout and reducing system-level timing constraints.

Is CY7C1351G-100AXCT pin-compatible with ZBT™ SRAMs?

Yes - the CY7C1351G-100AXCT is explicitly designed to be pin-compatible and functionally equivalent to industry-standard ZBT™ SRAMs (e.g., IDT72V2115 series), including identical 100-pin TQFP footprint, signal naming, and burst timing behavior. No PCB redesign is needed for drop-in replacement in existing ZBT™-based systems.

CY7C1351G-100AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1351G-100AXCT FAQ

1.How can I place an order for CY7C1351G-100AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1351G-100AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1351G-100AXCT reliable?

The price and inventory of CY7C1351G-100AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1351G-100AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1351G-100AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1351G-100AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1351G-100AXCT?

CY7C1351G-100AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1351G-100AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1351G-100AXCT?

For technical support, including CY7C1351G-100AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1351G-100AXCT requirements.

6.How does Aetrix verify that CY7C1351G-100AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1351G-100AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1351G-100AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1351G-100AXCT?

All CY7C1351G-100AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1351G-100AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1351G-100AXCT part is unused and in its original packaging.

Return procedure for CY7C1351G-100AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1351G-100AXCT Tags

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