Infineon Technologies CY7C1352F-100AC
- Part No.:
- CY7C1352F-100AC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1352F-100AC.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:2,760
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Product details
Overview
CY7C1352F-100AC from Cypress Semiconductor is a 4-Mbit (256K × 18) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput back-to-back read/write operations in networking and telecom data buffers. It operates on a single 3.3V core supply with 2.5V/3.3V I/O compatibility, supports linear or interleaved burst modes, and delivers 4.5 ns clock-to-output delay at 100 MHz.
For engineers reviewing the CY7C1352F-100AC datasheet, CY7C1352F-100AC pinout, CY7C1352F-100AC application, or CY7C1352F-100AC equivalent, key selection criteria include burst order control via MODE pin, synchronous self-timed write timing, byte-write select (BWA/BWB) granularity, and ZZ sleep mode entry/exit timing compliance.
Technical Context
The CY7C1352F-100AC implements a fully pipelined synchronous interface with all inputs registered on the rising edge of CLK and all outputs registered on the same edge. Its NoBL™ logic eliminates bus latency by enabling true consecutive read/write cycles without wait states, using internal burst counters and address steering logic.
It features three synchronous chip enables (CE1 active-low, CE2 active-high, CE3 active-low), asynchronous OE and ZZ controls, and on-chip self-timed write circuitry that latches data on the second clock edge after WE assertion. Burst order (linear/interleaved) is determined by the MODE pin voltage level.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 18 common I/O configuration) |
| Access Time (tCO) | 4.5 ns - maximum clock-to-output delay at 100 MHz operation |
| Supply Voltage | 3.3 V core (VDD); 2.5 V or 3.3 V I/O (VDDQ) - enables mixed-voltage system interfacing |
| Burst Capability | Linear or interleaved 4-word burst - selected by MODE pin strap (GND = linear, VDD/floating = interleaved) |
| Byte Write Control | Dual independent byte write selects (BWA, BWB) - enables selective 9-bit writes to upper/lower data bytes without read-modify-write overhead |
| Sleep Mode | Asynchronous ZZ input - reduces standby current to ≤40 mA while preserving data integrity; requires 2-clock cycle entry/exit |
| Package | 100-pin TQFP (14 × 14 mm, 0.5 mm pitch) - JEDEC-standard footprint for board-level compatibility |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 14 mm body, 0.5 mm lead pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Synchronous Address Input | Latched on rising CLK edge; A[1:0] feed internal 2-bit burst counter |
| BWA, BWB | Synchronous Byte Write Select | Active-low signals qualified with WE; control 9-bit write masking for DQA (byte A) and DQB (byte B) |
| CE1, CE2, CE3 | Synchronous Chip Enable | Three-input decode (CE1/L, CE2/H, CE3/L) enables depth expansion and bank selection |
| CLK, CEN | Clock & Clock Enable | CLK qualified by active-low CEN; deasserting CEN extends previous cycle without deselecting device |
| ADV/LD | Address Advance/Load Control | LOW loads new address; HIGH advances internal burst counter - critical for burst sequence control |
| OE | Asynchronous Output Enable | Active-low; output drivers automatically three-state during write data capture regardless of OE state |
| ZZ | Asynchronous Sleep Control | Active-high; places device in low-power sleep with guaranteed data retention; requires tZZREC recovery time post-exit |
| DQPA, DQPB | Parity I/O Pins | Functionally identical to DQs; parity bits controlled by corresponding BW[A:B] during writes |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) Architecture | Enables true back-to-back read/write transitions with zero wait states - increases effective bandwidth in burst-intensive systems |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write pulse width constraints - simplifies controller design and improves timing margin |
| Configurable Burst Order | MODE pin selects linear or interleaved 4-word burst - matches CPU cache line or DSP DMA access patterns |
| Byte-Write Select (BWA/BWB) | Independent 9-bit write enable per data byte - avoids full-word read-modify-write for partial updates |
| ZZ Sleep Mode with Data Retention | Reduces active power during idle periods while maintaining memory contents - supports low-duty-cycle packet buffering |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory in Telecom Routers |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switching fabric. IC Role / Device Role / Timing Role: High-speed common-I/O SRAM acting as dual-port-accessible buffer with pipelined read/write capability. Use Value: 4.5 ns tCO and NoBL™ architecture sustain 100 MHz sustained throughput across alternating read/write bursts - minimizes packet loss under congestion. | Use Scenario: Holding frame descriptors and queue management tables in OC-192 line cards. IC Role / Device Role / Timing Role: Synchronous burst SRAM providing deterministic latency for real-time traffic shaping engines. Use Value: Linear burst mode (MODE = GND) aligns with sequential descriptor fetches; ZZ sleep mode cuts standby power during low-traffic intervals. |
| DSP Co-Processor Data Cache | Industrial Protocol Gateway Buffer |
Use Scenario: Serving as L1 data cache extension for TI C6000-series DSPs executing FFT-based signal processing. IC Role / Device Role / Timing Role: Pipelined SRAM interfaced directly to EMIF with ADV/LD-driven burst addressing. Use Value: Interleaved burst mode (MODE = VDD) matches DSP's natural memory access stride; 2.5V/3.3V I/O allows direct connection to 2.5V DSP buses. | Use Scenario: Temporarily staging Modbus TCP and CANopen message payloads in factory-floor protocol converters. IC Role / Device Role / Timing Role: Dual-byte-write-capable SRAM supporting concurrent protocol stack reads and fieldbus writes. Use Value: Independent BWA/BWB pins enable atomic 9-bit updates to timestamp and CRC fields without corrupting adjacent payload bytes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PF | 3.3V-only I/O; no ZZ sleep mode; fixed interleaved burst only; 100-pin TQFP | Lacks power-gating capability; requires external clock gating for low-power states | Preferred where burst order is fixed and sleep mode is unnecessary |
| ISSI IS61WV25618BLL-10TLI | Asynchronous interface; no pipelining or burst counter; 10 ns access; 100-pin TQFP | Cannot support back-to-back read/write without wait states; lower peak bandwidth | Selected for cost-sensitive, non-pipelined legacy controller interfaces |
Compared with IDT72V2115L10PF and IS61WV25618BLL-10TLI, the CY7C1352F-100AC uniquely combines NoBL™ zero-wait-state operation, configurable burst order, and hardware sleep mode - making it optimal for power-aware, high-throughput packet and signal processing buffers.
Availability
CY7C1352F-100AC is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in telecom routers, and DSP co-processor data caches requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1352F-100AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications and industrial markets.
The CY7C1352F belongs to Cypress's NoBL™ SRAM product line, engineered specifically to eliminate bus latency in high-speed packet-processing and real-time signal-path applications requiring deterministic burst access.
FAQ
What is the function of the MODE pin on CY7C1352F-100AC?
The MODE pin selects burst address sequencing: tied to GND for linear burst (00→01→10→11), or to VDD/floating for interleaved burst (00→01→11→10). This setting is sampled at power-up and remains static during operation - no dynamic reconfiguration is supported. The pin has no internal pull-up; external biasing is required for reliable mode selection.
How does the ZZ sleep mode affect timing behavior during wake-up?
Upon deasserting ZZ (HIGH → LOW), the device requires two full CLK cycles before accepting new commands. During this tZZREC period (minimum 2 × tCLK), all inputs except CEN are ignored. The memory retains data throughout sleep, but pending operations at entry are invalidated - software must ensure the device is deselected before asserting ZZ.
Can CY7C1352F-100AC perform byte writes to parity bits DQPA/DQPB?
Yes - DQPA and DQPB are parity I/O pins functionally identical to DQA and DQB. When BWA is asserted, DQPA is written along with DQA; when BWB is asserted, DQPB is written with DQB. Parity byte writes occur synchronously with data writes and follow the same self-timed write timing - no additional control signals are needed.
Is the CY7C1352F-100AC pin-compatible with ZBT™ SRAMs?
Yes - the CY7C1352F-100AC is explicitly designed as pin-compatible and functionally equivalent to industry-standard ZBT™ SRAMs (e.g., IDT72V2115), sharing identical 100-pin TQFP footprint, signal naming, and burst timing behavior. However, it adds NoBL™ enhancements including automatic OE elimination and enhanced ZZ sleep control not present in baseline ZBT devices.
CY7C1352F-100AC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Bag
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1352F-100AC FAQ
1.How can I place an order for CY7C1352F-100AC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1352F-100AC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1352F-100AC reliable?
The price and inventory of CY7C1352F-100AC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1352F-100AC is usually 5 days.
3.What payment methods are accepted for CY7C1352F-100AC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1352F-100AC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1352F-100AC?
CY7C1352F-100AC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1352F-100AC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1352F-100AC?
For technical support, including CY7C1352F-100AC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1352F-100AC requirements.
6.How does Aetrix verify that CY7C1352F-100AC is sourced from the original manufacturer or authorized distributors?
All CY7C1352F-100AC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1352F-100AC meets industry standards.
7.What is the process for return or replacement of CY7C1352F-100AC?
All CY7C1352F-100AC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1352F-100AC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1352F-100AC part is unused and in its original packaging.
Return procedure for CY7C1352F-100AC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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