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Infineon Technologies CY7C1352G-133AXCT

Part No.:
CY7C1352G-133AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1352G-133AXCT.pdf
Description:
IC SRAM 4.5MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,271

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Product details

Overview

CY7C1352G-133AXCT from Cypress Semiconductor is a 4-Mbit (256K × 18) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput back-to-back read/write operations in networking and telecom data-path buffers. It operates on a single 3.3V core supply with 2.5V/3.3V I/O compatibility, supports linear or interleaved burst modes, and delivers 4.0 ns clock-to-output delay at 133 MHz.

For engineers reviewing the CY7C1352G-133AXCT datasheet, CY7C1352G-133AXCT pinout, CY7C1352G-133AXCT application, or CY7C1352G-133AXCT equivalent, this device serves as a low-latency, byte-write-capable burst SRAM for systems requiring deterministic timing, zero-wait-state memory access, and synchronous self-timed writes without external OE control.

Technical Context

The CY7C1352G-133AXCT implements a fully synchronous, pipelined architecture where all inputs-including address, BW[A:B], WE, CE1–CE3, ADV/LD, and CEN-are registered on the rising edge of CLK. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without wait states.

It features three synchronous chip enables (CE1 active-low, CE2 active-high, CE3 active-low), asynchronous OE and ZZ controls, on-chip burst counter (2-bit, configurable via MODE pin), and synchronous self-timed write circuitry that latches data on the second clock edge after write initiation. Output drivers are synchronously tri-stated during write data capture regardless of OE state.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K × 18 bits), supporting 18-bit common I/O data path with parity lines DQPA/DQPB.
Access Time (tCO) 4.0 ns maximum at 133 MHz - defines guaranteed data valid window after clock rise for timing-critical interfaces.
Supply Voltage Core: 3.3V ±0.3V; I/O: 2.5V or 3.3V - enables interoperability with mixed-voltage ASIC/FPGA designs.
Burst Capability Linear or interleaved 4-word burst - reduces address bus toggling and simplifies controller logic for sequential accesses.
Byte Write Control BW[A:B] + WE enable independent write to two 9-bit bytes - eliminates full-word read-modify-write overhead in packet header updates.
Sleep Mode Asynchronous ZZ input reduces standby current to ≤40 mA while preserving data integrity - supports power-gated subsystems.
Package 100-pin TQFP (14 × 14 mm, 0.5 mm pitch) - RoHS-compliant, lead-free, suitable for automated SMT assembly.

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), lead-free, body size 14 mm × 14 mm, pitch 0.5 mm.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Synchronous Address Input Latched on rising CLK edge; A0/A1 drive internal 2-bit burst counter for linear/interleaved sequences.
BWA, BWB Synchronous Byte Write Select Active-low signals qualified with WE; control 9-bit write masking for DQA/DQB and DQPA/DQPB groups.
CE1, CE2, CE3 Synchronous Chip Enable Three-input decode (CE1=L, CE2=H, CE3=L) enables depth expansion and bank selection without glue logic.
CLK, CEN Clock & Clock Enable CLK qualified by CEN (active-low); deasserting CEN extends previous cycle without losing state or requiring re-synchronization.
DQ0–DQ17, DQPA, DQPB Synchronous Bidirectional I/O 18 data + 2 parity lines; direction controlled by OE and internal logic; auto-tri-stated during write data capture.
OE Asynchronous Output Enable Active-low; overrides synchronous control to force tri-state but masked during write data phase and deselect transitions.
ZZ Asynchronous Sleep Control Active-high; places device in low-power sleep mode with guaranteed data retention; requires 2-cycle entry/exit latency.
MODE Burst Order Configuration Strap pin: grounded = linear burst; tied to VDD/floating = interleaved burst - sets address sequence without register programming.

Key Features

Feature Design Value
No Bus Latency™ Architecture Enables true back-to-back read/write with no wait states - increases effective bandwidth in burst-intensive packet buffering.
Synchronous Self-Timed Writes On-chip write timing eliminates need for external write pulse generation or OE coordination - simplifies FPGA controller design.
Byte Write Capability Independent 9-bit write enable per BYTE A/B group - accelerates partial-word updates in protocol header manipulation.
Configurable Burst Mode Hardware-selectable linear or interleaved 4-word burst via MODE pin - matches legacy ZBT or modern cache-line access patterns.
Power Management Asynchronous ZZ sleep mode + CEN clock gating - reduces dynamic and static power in idle or low-traffic intervals.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switch fabric ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly to SerDes MAC controllers and traffic managers.

Use Value: 4.0 ns tCO and NoBL™ pipelining ensure deterministic 133 MHz throughput with zero wait states during read/write alternation.

Use Scenario: Holding ATM cell headers and payload fragments in OC-48/192 line interface units requiring burst-aligned access.

IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as descriptor cache and temporary frame staging buffer between framer and processor.

Use Value: Interleaved burst mode aligns with SONET/SDH frame boundaries; byte write minimizes overhead in header field updates.

Baseband Processor Cache Radar Signal Processing Buffer

Use Scenario: Serving as instruction/data scratchpad for multi-core DSPs in 4G/LTE baseband processing units.

IC Role / Device Role / Timing Role: Low-jitter, pipelined memory resource synchronized to DSP clock domain with minimal timing margin requirements.

Use Value: 3.3V core + 2.5V I/O allows direct interfacing with 2.5V DSP I/O banks; CEN gating enables precise power-aware clock management.

Use Scenario: Capturing and buffering time-domain radar return samples prior to FFT processing in phased-array systems.

IC Role / Device Role / Timing Role: High-reliability burst memory providing glitch-free sample streaming under temperature-varying conditions.

Use Value: ZZ sleep mode preserves data during radar dwell intervals; 40 mA max CMOS standby current ensures low system-level quiescent power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L133PF Same density (256K × 18), 133 MHz, but uses QDR-II architecture with separate read/write ports and no ZZ sleep mode. Requires dual-port controller logic; lacks byte write and MODE-configurable burst order. Select when simultaneous read/write concurrency is required over burst efficiency and power control.
ISSI IS61WV25618BLL-133TQLI Pin-compatible ZBT-style SRAM, 133 MHz, but lacks NoBL™ logic - inserts one-cycle latency between read/write transitions. Needs additional wait-state handling in controller; no internal burst counter or MODE pin configuration. Choose for cost-sensitive designs where deterministic zero-latency switching is not mandatory.

Compared with IDT72V2115L133PF and IS61WV25618BLL-133TQLI, the CY7C1352G-133AXCT uniquely combines NoBL™ zero-wait-state operation, hardware-configurable burst mode, and asynchronous sleep - making it optimal for latency-constrained, power-aware burst memory applications where controller simplicity and timing predictability are critical.

Availability

CY7C1352G-133AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processor cache applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1352G-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1352G belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT SRAMs in systems demanding deterministic, zero-latency burst memory access with simplified timing closure and reduced controller complexity.

FAQ

What is the function of the MODE pin on CY7C1352G-133AXCT?

The MODE pin is a hardware strap that selects burst address sequencing: tied to GND enables linear burst (00→01→10→11), while tied to VDD or left floating enables interleaved burst (00→01→11→10). It requires no register programming or initialization sequence, and its state is sampled at power-up or reset - making burst behavior fixed and predictable across power cycles.

How does the CY7C1352G-133AXCT handle output tri-state during write operations?

During the data portion of any write cycle - whether single or burst - the DQ and DQP outputs are automatically tri-stated by internal logic, regardless of OE state. This prevents bus contention and eliminates the need for external OE timing coordination. OE only governs output driver state during read cycles and idle periods.

Can CY7C1352G-133AXCT operate with 2.5V I/O while using 3.3V core supply?

Yes. The device supports mixed-voltage operation: VDD = 3.3V ±0.3V powers the core logic, while VDDQ = 2.5V supplies the I/O buffers. This allows direct interfacing with 2.5V FPGAs or ASICs without level shifters, and the I/O pins are 3.3V-tolerant when VDDQ = 2.5V, ensuring robust signal integrity.

What happens to pending operations when the ZZ pin is asserted?

Asserting ZZ (HIGH) forces immediate entry into sleep mode after two clock cycles, but any access initiated before ZZ assertion is not completed nor guaranteed. The device must be fully deselected (all CEs inactive) before ZZ activation; otherwise, data corruption or undefined behavior may occur. Recovery requires ZZ deassertion followed by tZZREC (≥20 ns) before re-enabling CEs.

CY7C1352G-133AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
256K x 18
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1352G-133AXCT FAQ

1.How can I place an order for CY7C1352G-133AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1352G-133AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1352G-133AXCT reliable?

The price and inventory of CY7C1352G-133AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1352G-133AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1352G-133AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1352G-133AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1352G-133AXCT?

CY7C1352G-133AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1352G-133AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1352G-133AXCT?

For technical support, including CY7C1352G-133AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1352G-133AXCT requirements.

6.How does Aetrix verify that CY7C1352G-133AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1352G-133AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1352G-133AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1352G-133AXCT?

All CY7C1352G-133AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1352G-133AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1352G-133AXCT part is unused and in its original packaging.

Return procedure for CY7C1352G-133AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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