Infineon Technologies CY7C1353F-100AC

Overview

CY7C1353F-100AC from Cypress Semiconductor is a 4-Mb (256K × 18) synchronous flow-through SRAM with NoBL™ architecture, designed for zero-wait-state back-to-back read/write operations in high-throughput memory subsystems. It operates at 100 MHz with 8.0 ns clock-to-output delay, supports 2.5V/3.3V I/O, and features byte write capability, linear/interleaved burst modes, and JEDEC-standard 100-pin TQFP packaging. Used in network packet buffers and telecom line cards requiring deterministic latency.

For engineers reviewing the CY7C1353F-100AC datasheet, CY7C1353F-100AC pinout, CY7C1353F-100AC application, or CY7C1353F-100AC equivalent, key selection criteria include burst order control via MODE pin, synchronous self-timed write timing, CEN-gated clock qualification, and ZZ sleep mode entry/exit timing compliance.

Technical Context

The CY7C1353F-100AC implements a synchronous flow-through architecture where all inputs (address, WE, BW[A:B], CE1–CE3, ADV/LD) are registered on the rising edge of CLK, qualified by CEN. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without wait states.

Burst operation relies on an internal two-bit counter driven by A[1:0] and ADV/LD, with burst order (linear or interleaved) selected by the MODE pin. Write operations use synchronous self-timed circuitry, while OE remains asynchronous and masked during write data capture to prevent bus contention.

Key Specifications

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 14 mm body, 0.5 mm lead pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L10PF and IS61WV25618BLL-10TLI, the CY7C1353F-100AC uniquely combines NoBL™ zero-latency operation, configurable burst order, and ZZ sleep mode-making it optimal for latency-critical, power-aware telecom and networking designs where deterministic timing and flexible burst alignment are mandatory.

Availability

CY7C1353F-100AC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processor cache applications requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C1353F-100AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC, and USB solutions for industrial, automotive, and communications markets.

The CY7C1353F belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-frequency memory subsystems in networking infrastructure and real-time signal processing equipment.

FAQ

What is the function of the MODE pin on CY7C1353F-100AC?

The MODE pin selects burst address sequence: tied to GND for linear burst (00→01→10→11), or to VDD/floating for interleaved burst (00→01→10→11 becomes 00→01→10→11 → 01→00→11→10). This matches host processor burst patterns-linear for sequential streaming, interleaved for cache line access-and is sampled only at power-up or reset, not dynamically.

How does the ZZ sleep mode affect timing behavior during wake-up?

Asserting ZZ HIGH places the device in snooze mode after two clock cycles; deasserting ZZ LOW requires two additional clock cycles (tZZREC) before normal operation resumes. During this recovery window, CE1–CE3 must remain inactive, and no valid accesses are guaranteed-designs must insert idle cycles or use CEN gating to synchronize wake-up with system timing.

Can CY7C1353F-100AC perform byte writes during burst operations?

Yes-BW[A:B] signals are sampled each clock cycle during burst writes, allowing independent byte lane control per word. For example, asserting BW[A] only writes the upper 9 bits (DQPA/DQA group) while preserving lower 9 bits (DQPB/DQB group), enabling precise cache-line updates without full-word overwrites or external read-modify-write logic.

Why is OE masked during the data portion of a write cycle?

OE is masked to guarantee automatic three-state of DQs/DQP[A:B] during write data capture-preventing bus contention even if OE is accidentally asserted LOW. This hardware-enforced behavior ensures external drivers can safely present write data without requiring precise OE timing coordination, simplifying PCB layout and timing closure in high-speed systems.