Infineon Technologies CY7C1353G-100AXC
- Part No.:
- CY7C1353G-100AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1353G-100AXC.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:3,643
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Product details
Overview
CY7C1353G-100AXC from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 18) synchronous flow-through SRAM with NoBL™ architecture, designed for zero-wait-state, back-to-back read/write operations in high-bandwidth memory subsystems. It operates at 100 MHz with 8.0 ns clock-to-output delay, supports linear/interleaved burst modes, and features byte-write capability, registered inputs, and 2.5 V/3.3 V I/O power (VDDQ).
For engineers reviewing the CY7C1353G-100AXC datasheet, CY7C1353G-100AXC pinout, CY7C1353G-100AXC application, or CY7C1353G-100AXC equivalent, key selection criteria include synchronous burst timing integrity, ZZ sleep mode behavior, ADV/LD-controlled address loading, and TQFP-100 pin compatibility with ZBT™-class systems.
Technical Context
The CY7C1353G-100AXC implements a fully pipelined, clock-synchronous interface with rising-edge-triggered input registers for all control and address signals. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without wait states, supported by internal self-timed write circuitry and synchronous chip enables (CE1–CE3).
Burst operation is controlled by the MODE strap pin and ADV/LD signal, selecting either linear or interleaved 4-word sequences using A[1:0] as counter inputs. Output drivers are synchronously tri-stated during write data capture, and OE remains masked during write cycles to prevent bus contention - ensuring deterministic timing across read-write transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 18), enabling 18-bit wide data paths for network packet buffering or video frame storage |
| Max Clock Frequency | 100 MHz - guarantees full-speed operation in PCI-X, RapidIO, or legacy DDR memory controller interfaces |
| Access Time (tCDV) | 8.0 ns - defines minimum clock-to-valid-output delay for timing-critical read cycles |
| I/O Voltage (VDDQ) | 2.5 V or 3.3 V - allows interoperability with mixed-voltage SoC buses without level shifters |
| Burst Mode Control | MODE pin selects linear or interleaved 4-word burst order - matches processor cache line fetch patterns |
| Sleep Mode | ZZ pin (active HIGH) enables low-power "sleep" with data retention - reduces standby current to ≤40 mA |
| Write Enable Logic | WE + BW[A:B] enable byte-selectable writes - supports partial-word updates without read-modify-write overhead |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Rising-edge-triggered master timing reference for all synchronous operations |
| CEN | Clock enable | Active LOW gate for CLK - suspends internal state progression without deselecting device |
| ADV/LD | Address advance/load | LOW loads new address; HIGH advances internal burst counter - enables seamless burst sequencing |
| BW[A:B] | Byte write select | Active LOW dual-bit mask controlling which 9-bit half of DQ[17:0] is written |
| ZZ | Sleep mode input | Active HIGH forces non-time-critical sleep; must be externally grounded per errata (Pin 64) |
| DQ[17:0] | Data I/O bus | 18-bit bidirectional data path with automatic tri-state during write data capture |
| DQP[A:B] | Parity I/O | 2-bit parity bus synchronized with DQs - supports error detection in mission-critical buffers |
| CE1, CE2, CE3 | Chip enable group | Three-input decode (CE1=LOW, CE2=HIGH, CE3=LOW) enables depth expansion across multiple SRAMs |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Enables true back-to-back read/write with no wait states - increases effective bandwidth by up to 2× vs. conventional SRAMs |
| Internally self-timed output buffer control | Eliminates need for external OE timing management - simplifies PCB layout and reduces control logic complexity |
| Synchronous burst addressing | Reduces address bus traffic by 75% during sequential accesses - lowers controller overhead in packet processors |
| Asynchronous ZZ sleep mode | Preserves data while cutting dynamic and leakage current - extends battery life in portable test equipment |
| Registered inputs with clock qualification | Ensures setup/hold compliance across temperature/voltage corners - improves timing margin in industrial-grade designs |
Applications
| Telecom Line Cards | Network Packet Buffers |
|---|---|
|
Use Scenario: Storing incoming/outgoing ATM or Ethernet frames in carrier-grade switching fabric. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfacing directly with MAC controllers and switch fabrics. Use Value: 100 MHz burst reads/writes eliminate pipeline stalls during rapid frame ingress/egress, sustaining ≥1.6 Gbps aggregate throughput. |
Use Scenario: Temporary storage of fragmented IP packets before reassembly or QoS classification. IC Role / Device Role / Timing Role: Synchronous dual-port-like buffer supporting concurrent read (CPU) and write (PHY) access via time-multiplexed DQ bus. Use Value: Byte-write capability allows selective update of packet headers without full-word overwrite, reducing memory controller bandwidth demand. |
| Industrial PLC Motion Controllers | Test & Measurement Data Capture |
|
Use Scenario: Real-time interpolation table storage and servo command buffering in multi-axis CNC systems. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for motion profile generation engines requiring sub-10 ns timing predictability. Use Value: 8.0 ns tCDV and CEN-gated clocking ensure jitter-free position update timing under variable load conditions. |
Use Scenario: High-speed waveform digitization buffer in oscilloscopes and logic analyzers. IC Role / Device Role / Timing Role: Deep FIFO replacement with burst-mode capture aligned to trigger events and clock domains. Use Value: ZZ sleep mode reduces power during idle acquisition phases, extending thermal headroom in compact benchtop instruments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PF | 3.3 V only (no 2.5 V VDDQ support); 10 ns tCDV; no ZZ sleep pin | Lacks low-power sleep mode; requires tighter OE timing control | Preferred where VDDQ voltage flexibility and ultra-low standby power are not required |
| ISSI IS61WV25618BLL-10TLI | Asynchronous interface; 10 ns access; no burst counter or ADV/LD logic | Cannot support true back-to-back burst transfers - introduces wait states in high-throughput pipelines | Only suitable for cost-sensitive, non-pipelined control-plane memory where latency tolerance >10 ns |
Compared with IDT72V2115L10PF and IS61WV25618BLL-10TLI, the CY7C1353G-100AXC uniquely delivers zero-wait-state burst operation with integrated sleep control and dual-voltage I/O - making it the sole choice for power-constrained, latency-critical telecom and test equipment buffers.
Availability
CY7C1353G-100AXC is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, and industrial motion controllers requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant manufacturing.
Supply support for CY7C1353G-100AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.
The CY7C1353G belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for zero-latency memory subsystems in networking infrastructure and real-time industrial control - emphasizing timing determinism over density or cost.
FAQ
What is the correct configuration for the ZZ pin on CY7C1353G-100AXC?
The ZZ pin (Pin 64) must be externally connected to ground per documented errata. Although internally pulled down, floating ZZ causes undefined sleep behavior and potential data corruption. Grounding ensures reliable operation in active mode and prevents unintended entry into sleep state during power-up or noise events.
How does ADV/LD function during burst read sequences?
During burst reads, ADV/LD HIGH increments the internal 2-bit burst counter to generate the next sequential address using A[1:0], while ADV/LD LOW loads a new base address. This dual-mode operation allows seamless transition between burst and random-access modes without external address bus intervention.
Can CY7C1353G-100AXC operate with 2.5 V VDDQ while core VDD remains at 3.3 V?
Yes - VDD (core) and VDDQ (I/O) are independently powered. The device supports 3.3 V core operation with 2.5 V I/O signaling, enabling direct interface to 2.5 V FPGAs or ASICs without level translation, provided VDDQ stability meets ±5% tolerance per datasheet specifications.
Is the MODE pin latched or strap-only at power-up?
The MODE pin is a static strap pin sampled only at power-up reset. Its state (GND = linear, VDD/floating = interleaved) configures the burst counter permanently for that power cycle. It cannot be dynamically changed during operation and requires hardware-level configuration prior to initialization.
CY7C1353G-100AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1353G-100AXC FAQ
1.How can I place an order for CY7C1353G-100AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1353G-100AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1353G-100AXC reliable?
The price and inventory of CY7C1353G-100AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1353G-100AXC is usually 5 days.
3.What payment methods are accepted for CY7C1353G-100AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1353G-100AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1353G-100AXC?
CY7C1353G-100AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1353G-100AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1353G-100AXC?
For technical support, including CY7C1353G-100AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1353G-100AXC requirements.
6.How does Aetrix verify that CY7C1353G-100AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1353G-100AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1353G-100AXC meets industry standards.
7.What is the process for return or replacement of CY7C1353G-100AXC?
All CY7C1353G-100AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1353G-100AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1353G-100AXC part is unused and in its original packaging.
Return procedure for CY7C1353G-100AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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