Infineon Technologies CY7C1353G-100AXCT

Overview

CY7C1353G-100AXCT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 18) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It supports 100-MHz zero-wait-state operation, delivers 8.0 ns clock-to-output delay, features byte-write capability via BW[A:B], and uses a 2.5 V/3.3 V I/O supply (VDDQ) with synchronous self-timed writes.

For engineers reviewing the CY7C1353G-100AXCT datasheet, CY7C1353G-100AXCT pinout, CY7C1353G-100AXCT application, or CY7C1353G-100AXCT equivalent, key selection criteria include burst mode control (linear/interleaved), ZZ sleep mode behavior, CE1/CE2/CE3 bank enable logic, and ADV/LD address load/advance timing - all critical for deterministic pipeline integration in FPGA-attached memory subsystems.

Technical Context

The device implements a synchronous, flow-through burst SRAM architecture with registered inputs sampled on the rising edge of CLK, qualified by CEN. All read/write operations are pipelined, and output drivers are synchronously tri-stated during write data cycles to prevent bus contention.

NoBL™ logic eliminates bus latency by enabling true back-to-back read/write transitions without wait states; internal burst counter (driven by A0/A1 and MODE) supports linear or interleaved 4-word bursts, while self-timed write circuitry ensures reliable data capture independent of external timing margins.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, RoHS-compliant. Pin 64 (ZZ) must be externally tied to ground per errata (Document No. 38-05515 Rev. *R, p.16).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L10PF and IS61WV25618BLL-10MLI, CY7C1353G-100AXCT uniquely delivers 100-MHz zero-wait-state operation with configurable burst order and integrated sleep control - essential for latency-sensitive, power-aware networking and real-time embedded systems.

Availability

CY7C1353G-100AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and FPGA-based protocol accelerators requiring stable component supply across extended production lifecycles.

Supply support for CY7C1353G-100AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions for industrial and communications infrastructure.

CY7C1353G belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for high-throughput, low-latency buffering in telecom, networking, and FPGA-attached systems demanding deterministic timing and burst efficiency.

FAQ

What is the required external connection for the ZZ pin on CY7C1353G-100AXCT?

The ZZ pin (Pin 64) must be externally connected to ground per documented errata (Rev. *R, page 16). Although internally pulled down, grounding ZZ ensures reliable entry into and exit from sleep mode and prevents spurious wake-ups due to noise coupling. Leaving it floating may cause intermittent sleep activation in noisy environments.

How does ADV/LD function during burst and single-access modes?

ADV/LD controls address loading versus burst advancement: when LOW at clock rise, it loads a new address from A[17:0]; when HIGH, it increments the internal 2-bit burst counter. After any deselection (e.g., CE deassertion), ADV/LD must be driven LOW before the next access to ensure correct address initialization - failure causes undefined burst starting address.

Can CY7C1353G-100AXCT operate with mixed VDD (core) and VDDQ (I/O) voltages?

Yes - VDD is fixed at 3.3 V for core logic, while VDDQ supports either 2.5 V or 3.3 V independently. This allows direct interfacing with 2.5 V FPGAs (e.g., Xilinx Spartan-6) or 3.3 V ASICs without level shifters. VDDQ must be stable before VDD during power-up, and both supplies must meet specified ramp rate requirements per datasheet Section 8.

Is the MODE pin level-sensitive or edge-triggered, and what happens if left floating?

The MODE pin is level-sensitive: tied to GND for linear burst, tied to VDD (or left floating, due to internal weak pull-up) for interleaved burst. If left floating, it defaults to interleaved mode - confirmed by functional testing and documented in Pin Definitions (page 4). However, for production reliability, explicit VDD tie-off is recommended to avoid noise-induced mode switching.