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Infineon Technologies CY7C1354B-166BGC

Part No.:
CY7C1354B-166BGC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
119-BGA
Datasheet:
AetrixCY7C1354B-166BGC.pdf
Description:
IC SRAM 9MBIT PARALLEL 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,822

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Product details

Overview

CY7C1354B-166BGC from Cypress Semiconductor is a 9-Mb (256K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in network switches and telecom line cards. It operates at 166 MHz with 3.5 ns clock-to-output delay, supports byte-write via four BW pins, uses separate VDDQ (2.5V/3.3V) for I/O, and features synchronous self-timed writes and JTAG boundary scan.

For engineers reviewing the CY7C1354B-166BGC datasheet, CY7C1354B-166BGC pinout, CY7C1354B-166BGC application, or CY7C1354B-166BGC equivalent, key selection criteria include burst order control (linear/interleaved), synchronous chip enable logic (CE1/CE2/CE3), ZZ sleep mode support, and compatibility with ZBT-style bus protocols requiring zero-wait-state back-to-back read/write transitions.

Technical Context

The CY7C1354B-166BGC implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to the same edge. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write operations without wait states.

Burst addressing is controlled by ADV/LD and MODE pins: ADV/LD loads or increments an internal counter, while MODE selects linear or interleaved burst order using A0/A1. Write operations use synchronous self-timed circuitry, and output drivers are automatically three-stated during write data cycles to prevent bus contention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mb (256K × 36 organization), enabling compact high-bandwidth buffer storage in packet-forwarding engines.
Max Clock Frequency 166 MHz - defines maximum sustained transaction rate for back-to-back read/write sequences.
Access Time (tCO) 3.5 ns - guaranteed clock-to-output delay for timing-critical synchronous data capture in FPGA- or ASIC-based controllers.
I/O Voltage Support VDDQ = 2.5V or 3.3V - allows interoperability with mixed-voltage system buses without level-shifting.
Byte Write Control Four independent BWa–BWd signals - enables granular 8-bit write masking per data nibble group (DQa/DQPa through DQd/DQPd).
Power Supply Single 3.3V VDD core supply - simplifies power delivery design versus dual-supply SRAMs.
Standby Current 35 mA CMOS standby - supports low-power idle states in always-on networking infrastructure.

Pinout & Package

Package: 100-pin TQFP (Thin Quad Flat Package), 14 × 14 mm body, 0.5 mm pitch - suitable for high-density PCB layouts with standard reflow assembly.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Synchronous Address Input Latched on rising CLK edge; selects one of 256K memory locations (A0–A17 required for 256K × 36).
BWa–BWd Synchronous Byte Write Select Active-low controls write enable per 9-bit data group (DQa/DQPa through DQd/DQPd); qualified by WE and CLK.
CE1, CE3 Synchronous Chip Enable (active LOW) Combined with CE2 (active HIGH) to decode device selection; all three must be asserted for access initiation.
CLK, CEN Clock Input / Clock Enable CLK sampled only when CEN = LOW; deasserting CEN extends previous cycle without deselecting device.
DQa–DQd, DQPa–DQPd Synchronous Bidirectional Data I/O 36 data + 4 parity lines; direction controlled by OE and internal logic; auto-three-stated during write data phase.
OE Asynchronous Output Enable Active-low enables output drivers; masked during write data cycles and after deselect to ensure bus integrity.
MODE Strap Pin for Burst Order HIGH = interleaved burst (A0/A1 toggle), LOW = linear burst; must remain static during operation.
ZZ Deep Sleep Control Active-low reduces standby current further; retains data but disables all internal clocks and I/O drivers.

Key Features

Feature Design Value
No Bus Latency™ Architecture Enables true back-to-back read/write operations with zero wait states, increasing effective bandwidth by up to 2× vs. asynchronous SRAMs.
Fully Registered Pipelining All inputs and outputs synchronized to CLK rising edge, eliminating setup/hold timing violations in high-speed controller interfaces.
Synchronous Self-Timed Writes On-chip write timing control removes external write-pulse width constraints and simplifies FPGA/ASIC interface logic.
JTAG Boundary Scan (IEEE 1149.1) Supports production test and board-level debug without additional test points or bed-of-nails fixtures.
Separate VDDQ Supply Allows independent I/O voltage scaling (2.5V or 3.3V) to match host processor or FPGA I/O standards without level shifters.

Applications

Network Packet Buffer Telecom Line Card Cache

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switch fabric ASICs.

IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly with SerDes MAC controllers and traffic managers.

Use Value: 166 MHz pipelined operation sustains >5.9 Gbps aggregate throughput (36-bit × 166 MHz), eliminating pipeline stalls during header rewrite operations.

Use Scenario: Temporary storage of voice-over-IP (VoIP) frame payloads and jitter buffers in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Synchronous burst-access memory supporting real-time TDMA slot allocation and echo cancellation coefficient updates.

Use Value: Linear/interleaved burst modes align with DSP DMA engine addressing patterns, reducing address bus overhead by 75% per 4-word transfer.

Baseband Processor Memory Radar Signal Processing Buffer

Use Scenario: Intermediate storage for channel estimation and MIMO matrix computation in LTE/5G baseband SoCs.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-latency memory co-located with FFT and Viterbi accelerator blocks.

Use Value: 3.5 ns tCO ensures sub-cycle timing margin for 166 MHz clock domains, enabling single-cycle data handoff between processing stages.

Use Scenario: Capturing and buffering digitized RF return samples in phased-array radar front-end modules.

IC Role / Device Role / Timing Role: High-reliability burst memory interfacing with high-speed ADCs and digital downconverters (DDCs).

Use Value: ZZ sleep mode reduces standby power to <5 mW during inter-pulse intervals, critical for airborne SWaP-constrained systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L16PF 256K × 36, 166 MHz, but uses QDR-II architecture with separate read/write ports and no ZZ sleep mode. Lacks integrated burst counter and MODE-selectable burst order; requires external address generation logic. Prefer when dual-port concurrent access is required over burst simplicity and low-power sleep.
ISSI IS61WV25636B 256K × 36, 166 MHz, but asynchronous SRAM with no clock input, no pipelining, and no burst capability. Requires external wait-state insertion and lacks NoBL™ zero-wait-state performance; no JTAG or ZZ mode. Choose only for legacy designs where clocked interface redesign is not feasible.

Compared with IDT72V2115L16PF and IS61WV25636B, the CY7C1354B-166BGC uniquely delivers pipelined zero-wait-state operation with integrated burst control, JTAG testability, and deep-sleep power management-making it optimal for new high-speed communications hardware where timing determinism and power efficiency are co-prioritized.

Availability

CY7C1354B-166BGC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, baseband processor memory, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1354B-166BGC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial and communications markets.

The CY7C1354B belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace ZBT SRAMs in bandwidth-constrained, low-latency systems such as packet-switched routers and wireless infrastructure equipment.

FAQ

What is the function of the MODE pin on CY7C1354B-166BGC?

The MODE pin is a strap input that selects burst addressing order: logic HIGH configures interleaved burst (A0/A1 toggle per beat), while logic LOW selects linear burst (sequential A0/A1 increment). It must be held static during operation and defaults HIGH if left floating, ensuring predictable burst behavior without external configuration registers.

How does the ZZ (Sleep) mode reduce power consumption?

When ZZ is asserted LOW, the CY7C1354B-166BGC disables internal clocks, shuts down I/O drivers, and places the memory array in ultra-low-power retention state while preserving stored data. This reduces standby current beyond the standard 35 mA CMOS spec-critical for intermittent-operation systems like remote radio units.

Can CY7C1354B-166BGC operate with 2.5V I/O while maintaining 3.3V core voltage?

Yes. The device uses separate VDDQ (I/O supply) and VDD (core supply) pins. VDDQ may be set to 2.5V or 3.3V independently, allowing direct interface with 2.5V FPGAs or processors while retaining full 3.3V core functionality and timing specifications-including 3.5 ns tCO and 166 MHz operation.

Is JTAG boundary scan supported on CY7C1354B-166BGC, and how is it enabled?

Yes, IEEE 1149.1 JTAG boundary scan is fully implemented. It is enabled by asserting TMS, applying TCK, and driving TDI with appropriate test vectors-no configuration register or mode pin is required. The TDO pin outputs scanned data on the falling edge of TCK, supporting automated PCB test and in-system verification.

CY7C1354B-166BGC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
119-BGA
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

CY7C1354B-166BGC FAQ

1.How can I place an order for CY7C1354B-166BGC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1354B-166BGC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1354B-166BGC reliable?

The price and inventory of CY7C1354B-166BGC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1354B-166BGC is usually 5 days.

3.What payment methods are accepted for CY7C1354B-166BGC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1354B-166BGC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1354B-166BGC?

CY7C1354B-166BGC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1354B-166BGC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1354B-166BGC?

For technical support, including CY7C1354B-166BGC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1354B-166BGC requirements.

6.How does Aetrix verify that CY7C1354B-166BGC is sourced from the original manufacturer or authorized distributors?

All CY7C1354B-166BGC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1354B-166BGC meets industry standards.

7.What is the process for return or replacement of CY7C1354B-166BGC?

All CY7C1354B-166BGC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1354B-166BGC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1354B-166BGC part is unused and in its original packaging.

Return procedure for CY7C1354B-166BGC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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