Infineon Technologies CY7C1354C-166AXC
- Part No.:
- CY7C1354C-166AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1354C-166AXC.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:359
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1354C-166AXC from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 166 MHz with zero wait states, supports 3.3 V core supply and 2.5/3.3 V I/O, and delivers 3.5 ns clock-to-output access time.
For engineers reviewing the CY7C1354C-166AXC datasheet, CY7C1354C-166AXC pinout, CY7C1354C-166AXC application, or CY7C1354C-166AXC equivalent, this device is selected for systems requiring deterministic back-to-back read/write cycles, burst-mode addressing (linear or interleaved), byte-selectable writes, and JTAG boundary-scan testability in space-constrained TQFP layouts.
Technical Context
The CY7C1354C-166AXC implements fully registered synchronous interfaces: all address, control, and data inputs pass through rising-edge-triggered registers, and outputs are driven from output registers synchronized to CLK. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write operations without pipeline stalls.
Burst operation is controlled by ADV/LD and MODE pins, supporting both linear and interleaved address sequences. Write timing is managed by synchronous self-timed circuitry, while OE remains asynchronous for tristate control-automatically disabled during write data phases to prevent bus contention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (256K × 36 organization), enabling 36-bit wide data paths for parallel bus architectures. |
| Max Clock Frequency | 166 MHz - guarantees full-speed operation in systems with 6 ns clock period timing budgets. |
| Access Time | 3.5 ns - defines minimum CLK-to-DQ valid delay for timing closure in synchronous read cycles. |
| VDD / VDDQ | 3.3 V core supply (VDD); selectable 2.5 V or 3.3 V I/O supply (VDDQ) for mixed-voltage system interfacing. |
| Power Consumption | 180 mA max operating current; 40 mA CMOS standby current - enables low-idle-power buffer design. |
| Burst Capability | Linear or interleaved burst order via MODE pin strap - matches legacy ZBT or contemporary processor burst protocols. |
| JTAG Support | IEEE 1149.1-compliant boundary scan - provides production test coverage without external test fixtures. |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, RoHS-compliant, with exposed thermal pad (not electrically connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit synchronous address bus sampled on rising CLK edge; selects one of 256K locations. |
| BWa–BWd | Byte Write Select | Four active-low synchronous controls enabling independent 9-bit writes to DQa/DQPa through DQd/DQPd. |
| CLK, CEN | Clock & Enable | CLK qualified by CEN: deasserting CEN extends previous cycle without deselecting device or losing state. |
| CE1, CE2, CE3 | Chip Enable Group | Three synchronous enables (CE1/CE3 active LOW, CE2 active HIGH) allow flexible bank decoding in multi-SRAM systems. |
| DQa–DQd, DQPa–DQPd | Data I/O with Parity | 36-bit data + 4-bit parity bidirectional bus; direction controlled by OE and internal write/read state machine. |
| OE | Asynchronous Output Enable | Active-low tristate control masked automatically during write data phase and after deselection to prevent bus conflicts. |
| ADV/LD, MODE, ZZ | Function Control | ADV/LD advances or loads burst address; MODE selects linear/interleaved burst; ZZ enables low-power sleep mode. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables true back-to-back read/write operations with no wait states - critical for packet buffering in wire-speed switches. |
| Byte-Write Select Logic | Four independent BWx signals allow partial-word writes without read-modify-write cycles - reduces bus traffic in protocol stack buffers. |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write pulse generation - simplifies PCB layout and timing margin analysis. |
| Flexible I/O Voltage | VDDQ configurable for 2.5 V or 3.3 V - permits direct interface to both older 3.3 V ASICs and newer 2.5 V FPGAs. |
| IEEE 1149.1 Boundary Scan | Full JTAG support with TAP controller, instruction register, and boundary-scan chain - enables automated board-level test and debug. |
Applications
| Telecom Line Card Buffering | Network Packet Processor Cache |
|---|---|
|
Use Scenario: Storing incoming/outgoing ATM or Ethernet frames in OC-192 line interface units before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer providing deterministic 166 MHz burst reads/writes between SERDES and traffic manager ASICs. Use Value: Eliminates pipeline bubbles during rapid read/write alternation, sustaining >95% bus utilization under real-time traffic load. |
Use Scenario: Acting as temporary storage for packet headers and metadata in multi-core network processors handling IPv4/IPv6 forwarding lookups. IC Role / Device Role / Timing Role: Synchronous pipelined memory serving as L1 instruction/data scratchpad with burst-aligned access to reduce CPU stall cycles. Use Value: 3.5 ns access time and zero-wait-state operation enable single-cycle header parsing loops without interlock penalties. |
| Baseband Processing Memory | Radar Signal Processing Buffer |
|
Use Scenario: Holding intermediate FFT results and channel estimation coefficients in 4G/LTE baseband ASICs during OFDM symbol processing. IC Role / Device Role / Timing Role: Dual-port-capable SRAM configured for concurrent read (coefficient fetch) and write (result store) using CE partitioning. Use Value: Byte-write capability allows selective update of coefficient subsets without disturbing adjacent memory regions - preserving data coherency. |
Use Scenario: Capturing digitized IF samples from high-speed ADCs in phased-array radar receivers prior to digital beamforming. IC Role / Device Role / Timing Role: Burst-mode SRAM buffer synchronizing to ADC sample clock and feeding DSP cores via DMA with linear-addressed bursts. Use Value: Interleaved burst mode (via MODE pin) aligns with radar pulse repetition interval addressing patterns for optimal memory bandwidth reuse. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L16PF | 512K × 18 organization; 166 MHz; 3.3 V only (no VDDQ flexibility); no ZZ sleep mode. | Lacks byte-write granularity and low-power sleep - less suitable for power-sensitive portable radar modules. | Select when 18-bit bus width suffices and JTAG test is not required. |
| ISSI IS61WV102436B | 1024K × 36 organization; 166 MHz; 3.3 V core/I/O; no MODE-controlled burst order; no JTAG. | Higher density but fixed linear burst only - incompatible with legacy ZBT-based systems requiring interleaved addressing. | Select for cost-sensitive designs where burst mode flexibility and boundary scan are unnecessary. |
Compared with IDT72V2115L16PF and IS61WV102436B, the CY7C1354C-166AXC uniquely combines 36-bit width, dual-VDDQ support, programmable burst order, byte-write select, and IEEE 1149.1 testability - making it the only option meeting full telecom equipment qualification requirements for backplane-facing buffers.
Availability
CY7C1354C-166AXC is available at Aetrix Electronics and suitable for telecom line card buffering, network packet processor cache, and baseband processing memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C1354C-166AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions.
The CY7C1354C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, zero-latency memory interfacing in high-speed communications infrastructure and real-time signal processing systems.
FAQ
What is the function of the MODE pin on CY7C1354C-166AXC?
The MODE pin is a static strap input that configures burst address sequencing: tied HIGH for interleaved burst order (e.g., 0, 8, 1, 9…), pulled LOW for linear burst order (e.g., 0, 1, 2, 3…). It is sampled at power-up and remains latched; no dynamic reconfiguration is supported during operation.
Can CY7C1354C-166AXC operate with 2.5 V I/O while using 3.3 V core supply?
Yes. VDD must be 3.3 V ±0.3 V, while VDDQ can be independently set to either 2.5 V ±0.2 V or 3.3 V ±0.3 V. This allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters, provided VDDQ stability meets AC timing requirements.
How does the ZZ (sleep) mode affect power consumption and timing recovery?
In ZZ mode, core current drops to ≤5 µA (typical), and the device retains all data. Exiting ZZ requires ≥100 ns stabilization time before first valid access; CLK must be running, and CEN must be asserted LOW before issuing any command.
Is the CY7C1354C-166AXC pin-compatible with ZBT SRAMs?
Yes - it is explicitly designed as pin-compatible and functionally equivalent to ZBT devices such as the IDT72V2115. Identical pin assignments for address, data, control, and power terminals enable drop-in replacement in existing ZBT-based PCB layouts.
CY7C1354C-166AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1354C-166AXC FAQ
1.How can I place an order for CY7C1354C-166AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1354C-166AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1354C-166AXC reliable?
The price and inventory of CY7C1354C-166AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1354C-166AXC is usually 5 days.
3.What payment methods are accepted for CY7C1354C-166AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1354C-166AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1354C-166AXC?
CY7C1354C-166AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1354C-166AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1354C-166AXC?
For technical support, including CY7C1354C-166AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1354C-166AXC requirements.
6.How does Aetrix verify that CY7C1354C-166AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1354C-166AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1354C-166AXC meets industry standards.
7.What is the process for return or replacement of CY7C1354C-166AXC?
All CY7C1354C-166AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1354C-166AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1354C-166AXC part is unused and in its original packaging.
Return procedure for CY7C1354C-166AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1354C-166AXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
