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Infineon Technologies CY7C1354C-166BGCT
- Part No.:
- CY7C1354C-166BGCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
CY7C1354C-166BGCT.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,945
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Product details
Overview
CY7C1354C-166BGCT from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 166 MHz with zero wait states, supports 3.3 V core supply and 2.5/3.3 V I/O, and delivers 3.5 ns clock-to-output access time.
For engineers reviewing the CY7C1354C-166BGCT datasheet, CY7C1354C-166BGCT pinout, CY7C1354C-166BGCT application, or CY7C1354C-166BGCT equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write granularity across four 9-bit data groups, synchronous self-timed write control, and JTAG boundary-scan support for system-level testability.
Technical Context
The CY7C1354C-166BGCT implements fully registered synchronous interfaces on all inputs and outputs, with clock qualification via CEN and address advancement via ADV/LD. Its NoBL™ logic enables true back-to-back read/write operations without bus latency, eliminating pipeline stalls in burst-intensive traffic flows.
It features four independent byte-write enables (BWa–BWd), each controlling one 9-bit data/parity pair (DQa/DQPa through DQd/DQPd), and supports both linear and interleaved burst addressing selected by the MODE strap pin. Output drivers are synchronously tristated during write data cycles to prevent bus contention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (256K × 36 organization) |
| Max Clock Frequency | 166 MHz - enables sustained 166 MT/s throughput with no wait states |
| Access Time | 3.5 ns - defines minimum clock-to-output delay for timing-critical read paths | Supply Voltage (VDD) | 3.3 V ± 0.3 V - single-core rail simplifies power delivery in 3.3 V systems |
| I/O Voltage (VDDQ) | 2.5 V or 3.3 V - supports mixed-voltage interface with FPGA or ASIC I/O banks |
| Burst Capability | Linear or interleaved - configurable via MODE pin for compatibility with specific bus protocols |
| Power Consumption | 180 mA max operating current - determines thermal budget in dense memory subsystems |
Pinout & Package
Package: 119-ball BGA (14 × 22 × 2.4 mm), Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit synchronous address bus sampled on CLK rising edge; selects one of 256K locations |
| BWa–BWd | Byte Write Enable | Four active-low synchronous controls, each enabling write to one 9-bit DQ/DQP group |
| CLK | System Clock Input | Rising-edge-triggered master clock; qualified by CEN to gate clock recognition |
| CEN | Clock Enable | Active-low synchronous signal that masks CLK without deselecting device; extends previous cycle |
| CE1, CE3 | Chip Enable (Low) | Synchronous active-low enables; used with CE2 (active-high) for 3-signal bank selection |
| OE | Output Enable | Asynchronous active-low control; masked during write data phase to enforce automatic tristate |
| DQa–DQd / DQPa–DQPd | Data I/O (x36 + x4 parity) | 36-bit bidirectional data bus plus 4 parity bits; direction controlled by OE and internal logic |
| MODE | Burst Order Strap | Static input determining burst sequence: HIGH = interleaved, LOW = linear |
| ADV/LD | Address Counter Control | Advances internal burst counter when HIGH; loads new address when LOW |
| ZZ | Deep Sleep Mode | Asynchronous entry into low-power sleep; reduces standby current to <10 µA |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables unlimited consecutive read/write operations with zero wait states, maximizing bus utilization in packet-forwarding engines |
| Fully Registered Interface | All inputs and outputs synchronized to CLK rising edge, ensuring deterministic setup/hold timing across temperature and voltage |
| Synchronous Self-Timed Writes | On-chip write timing eliminates external write-pulse generation and guarantees data coherency without external control logic |
| JTAG Boundary Scan (IEEE 1149.1) | Supports board-level interconnect testing and in-system diagnostics without requiring dedicated test access hardware |
| Flexible I/O Voltage (VDDQ) | 2.5 V or 3.3 V operation allows direct interfacing with legacy or low-voltage FPGAs without level-shifting circuitry |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-speed dual-port buffer providing zero-latency read/write turnaround for real-time traffic shaping. Use Value: 166 MHz sustained throughput and byte-write capability reduce memory controller overhead and enable fine-grained packet modification. |
Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers handling OC-48 and OC-192 line rates. IC Role / Device Role / Timing Role: Synchronous burst SRAM serving as elastic store between line-rate serializers and parallel processing ASICs. Use Value: 3.5 ns clock-to-output and fully registered interface meet tight setup/hold margins required for 2.5 Gbps+ serial link alignment. |
| Baseband Processing Cache | Radar Signal Processing Buffer |
|
Use Scenario: Temporary storage of channelized voice samples and control messages in 3G/4G LTE base station remote radio heads. IC Role / Device Role / Timing Role: Low-latency memory subsystem supporting burst-mode DMA transfers between DSP cores and RF front-end interfaces. Use Value: Interleaved/linear burst mode selection via MODE pin aligns with specific DSP memory access patterns, minimizing bus arbitration cycles. |
Use Scenario: Real-time buffering of digitized IF samples in phased-array radar receivers before FFT computation. IC Role / Device Role / Timing Role: Pipelined SRAM acting as first-level acquisition memory with deterministic read latency for time-critical pulse detection. Use Value: ZZ sleep mode reduces quiescent power during idle scan periods, extending thermal headroom in sealed radar enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L166PF | Same 256K × 36 density and 166 MHz speed grade, but uses QDR-II interface with separate read/write clocks | Requires dual-clock domain design; lacks MODE-controlled burst order and ZZ sleep mode | Preferred when system already uses QDR-II protocol stack and needs higher peak bandwidth over sustained burst efficiency |
| ISSI IS61WV25636B | 256K × 36 ZBT SRAM, 166 MHz, but lacks NoBL™ logic, JTAG, and ZZ sleep mode; only supports linear burst | No burst-order flexibility or deep-sleep capability; lower integration reduces test coverage in complex systems | Selected for cost-sensitive applications where JTAG testability and ultra-low standby power are not required |
Compared with IDT72V2115L166PF and IS61WV25636B, the CY7C1354C-166BGCT uniquely combines NoBL™ zero-wait-state operation, programmable burst order, and IEEE 1149.1 testability-making it optimal for telecom infrastructure requiring both performance determinism and production test scalability.
Availability
CY7C1354C-166BGCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal processing buffer applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1354C-166BGCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The CY7C1354C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-bandwidth memory subsystems in telecom infrastructure and packet-processing equipment where bus latency directly impacts system throughput.
FAQ
What is the function of the MODE pin on CY7C1354C-166BGCT?
The MODE pin is a static strap input that configures burst addressing order: pulled HIGH for interleaved burst (e.g., 0, 2, 4, 6, 1, 3, 5, 7), pulled LOW for linear burst (e.g., 0, 1, 2, 3, 4, 5, 6, 7). It must be set at power-up and remains latched; no dynamic reconfiguration is supported during operation.
How does the ZZ (sleep) mode reduce power consumption?
Asserting ZZ asynchronously places the device into deep sleep, reducing CMOS standby current to less than 10 µA. All internal registers retain state, and the device resumes normal operation within one clock cycle after ZZ is deasserted-enabling rapid wake-up in burst-idle traffic patterns.
Can CY7C1354C-166BGCT operate with 2.5 V I/O while using 3.3 V core supply?
Yes. VDD is fixed at 3.3 V ± 0.3 V for core logic, while VDDQ may be independently set to either 2.5 V or 3.3 V to match the I/O voltage of the connected controller. This dual-rail support eliminates external level shifters in mixed-voltage designs.
Is JTAG boundary scan functional when the device is in ZZ sleep mode?
No. JTAG operation requires the device to be in active mode with CEN asserted LOW and CLK running. During ZZ sleep, the TAP controller is disabled, and boundary-scan instructions cannot be executed-JTAG is only available during normal powered operation.
CY7C1354C-166BGCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
CY7C1354C-166BGCT FAQ
1.How can I place an order for CY7C1354C-166BGCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1354C-166BGCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1354C-166BGCT reliable?
The price and inventory of CY7C1354C-166BGCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1354C-166BGCT is usually 5 days.
3.What payment methods are accepted for CY7C1354C-166BGCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1354C-166BGCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1354C-166BGCT?
CY7C1354C-166BGCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1354C-166BGCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1354C-166BGCT?
For technical support, including CY7C1354C-166BGCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1354C-166BGCT requirements.
6.How does Aetrix verify that CY7C1354C-166BGCT is sourced from the original manufacturer or authorized distributors?
All CY7C1354C-166BGCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1354C-166BGCT meets industry standards.
7.What is the process for return or replacement of CY7C1354C-166BGCT?
All CY7C1354C-166BGCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1354C-166BGCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1354C-166BGCT part is unused and in its original packaging.
Return procedure for CY7C1354C-166BGCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1354C-166BGCT Tags
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