My Inquiry
My Account
Infineon Technologies CY7C1354C-166BZC
- Part No.:
- CY7C1354C-166BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1354C-166BZC.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 165FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,583
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1354C-166BZC from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations. It operates at 166 MHz with 3.5 ns maximum access time, supports 3.3V core and 2.5V/3.3V I/O supplies, and delivers fully registered inputs/outputs for deterministic timing in telecom switching fabric and network packet buffer applications.
For engineers reviewing the CY7C1354C-166BZC datasheet, CY7C1354C-166BZC pinout, CY7C1354C-166BZC application, or CY7C1354C-166BZC equivalent, key selection criteria include burst order control (linear/interleaved), byte-write granularity (BWa–BWd), synchronous self-timed write capability, and JTAG boundary-scan support for system-level testability.
Technical Context
The device implements a fully synchronous, pipelined memory interface with all inputs and outputs registered on the rising edge of CLK, qualified by CEN. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without wait states.
Burst operation is controlled via ADV/LD and MODE pins: MODE selects linear or interleaved burst order using A0/A1, while ADV/LD advances the internal counter or loads new addresses. Write operations are self-timed and qualified by WE and four independent byte-write enables (BWa–BWd), each controlling one 9-bit data/parity group (DQa/DQPa through DQd/DQPd).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (256K × 36 organization), enabling single-chip storage for 36-bit wide data paths in switch fabric buffers. |
| Max Clock Frequency | 166 MHz - defines maximum sustained transaction rate for continuous burst reads/writes without pipeline stalls. |
| Access Time (tCO) | 3.5 ns - clock-to-output delay determining minimum read turnaround time in pipelined systems. |
| Supply Voltages | VDD = 3.3 V ± 0.3 V (core); VDDQ = 2.5 V or 3.3 V (I/O) - supports mixed-voltage system interfacing with FPGA or ASIC I/O banks. |
| Byte Write Control | Four independent BWa–BWd signals - allows selective 9-bit writes per cycle, reducing bus contention and power in partial-word updates. |
| Burst Capability | Linear or interleaved 4-word burst - reduces address bus traffic and simplifies controller logic for sequential memory access patterns. |
| JTAG Support | IEEE 1149.1-compliant boundary scan - enables board-level interconnect testing without physical probe access. |
Pinout & Package
Package: 100-pin TQFP (Pb-free), 14 × 14 mm body, 0.5 mm pitch. Pinout validated per Cypress Document #38-05538 Rev. *H, Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Synchronous Address Input | Latched on rising CLK edge; selects one of 256K memory locations for read/write access. |
| BWa–BWd | Synchronous Byte Write Select | Active-low controls 9-bit write enable per data group (DQa/DQPa to DQd/DQPd), enabling partial-word writes. |
| CLK | Primary Clock Input | Drives all synchronous registers; qualified by CEN - no state change occurs when CEN is HIGH. |
| CEN | Clock Enable | Active-low gate for CLK; suspends operation without deselecting device, extending previous cycle timing. |
| ADV/LD | Advance/Load Control | HIGH advances internal burst counter; LOW loads new address - critical for burst sequence management. |
| MODE | Burst Order Configuration | Strap pin: HIGH = interleaved burst, LOW = linear burst - sets burst address sequence without software overhead. |
| DQa–DQd / DQPa–DQPd | Bidirectional Data I/O | 36-bit data + 4-bit parity; direction controlled by OE and internal logic; automatically tristated during write data phase. |
| CE1, CE2, CE3 | Chip Enable Inputs | Three-signal decode (CE1=LOW, CE2=HIGH, CE3=LOW) enables depth expansion across multiple SRAMs. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables true back-to-back read/write transitions with zero wait states, increasing effective bandwidth in burst-intensive applications. |
| Fully Registered Interface | All inputs and outputs synchronized to CLK rising edge, eliminating setup/hold violations and simplifying timing closure in high-speed designs. |
| Synchronous Self-timed Writes | On-chip write timing control eliminates external write pulse generation, reducing controller complexity and PCB routing burden. |
| Flexible I/O Voltage | VDDQ supports 2.5 V or 3.3 V operation, allowing direct interface to both legacy and modern FPGA I/O standards without level shifters. |
| Power Management Options | "ZZ" sleep mode and stop-clock capability reduce active standby current to 40 mA, critical for thermally constrained telecom modules. |
Applications
| Telecom Switch Fabric Buffer | Network Packet Processor Cache |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet frames in multi-gigabit line cards. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer between ingress/egress engines with deterministic 3.5 ns read response. Use Value: Enables full-line-rate packet buffering with zero wait states, preventing frame loss during traffic bursts. |
Use Scenario: Temporary storage of packet headers and metadata during deep packet inspection. IC Role / Device Role / Timing Role: Pipelined SRAM acting as instruction/data cache for RISC-based packet classification engines. Use Value: Sustains 166 MHz burst reads/writes to match processor pipeline depth, avoiding stall cycles during header parsing. |
| Baseband Digital Signal Processing | Industrial Real-time Controller Memory |
|
Use Scenario: Intermediate result storage in LTE/5G baseband modems performing FFT and channel estimation. IC Role / Device Role / Timing Role: Dual-port-capable memory block supporting concurrent read (for coefficient fetch) and write (for result store) operations. Use Value: Byte-write select (BWa–BWd) allows partial-word updates of complex-number coefficients without overwriting adjacent data. |
Use Scenario: Deterministic memory for safety-critical PLC motion control algorithms requiring guaranteed worst-case access time. IC Role / Device Role / Timing Role: Synchronous SRAM providing jitter-free data access aligned to real-time scheduler ticks. Use Value: Fully registered interface ensures sub-nanosecond timing margin compliance under temperature and voltage variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L16PF | 256K × 36, 166 MHz, but uses QDR-II+ architecture with separate read/write ports and no byte-write enables. | Requires dual-port controller logic; lacks BWa–BWd for partial-word writes, increasing software overhead for small-data updates. | Select when simultaneous read/write concurrency is required over byte-granular write flexibility. |
| ISSI IS61WV25636B | 256K × 36, 166 MHz, but asynchronous SRAM with no clocked interface or burst capability. | Cannot support pipelined back-to-back operations; requires external wait-state insertion in high-speed controllers. | Select only for legacy systems lacking clock-domain synchronization or where burst access is unnecessary. |
Compared with IDT72V2115L16PF and IS61WV25636B, CY7C1354C-166BZC uniquely combines zero-wait-state pipelining, byte-selectable writes, and programmable burst order-making it optimal for systems where memory bandwidth efficiency and controller simplicity are co-prioritized.
Availability
CY7C1354C-166BZC is available at Aetrix Electronics and suitable for telecom infrastructure, network packet processing, baseband signal processing, and industrial real-time control applications requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1354C-166BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1354C belongs to Cypress's NoBL™ SRAM product line, engineered specifically to eliminate bus latency in high-speed packet-switching and real-time DSP systems where deterministic, wait-state-free memory access is mandatory.
FAQ
What is the function of the MODE pin on CY7C1354C-166BZC?
The MODE pin is a strap input that configures the on-chip burst counter's address sequence: pulled HIGH for interleaved burst order (e.g., 0x00, 0x02, 0x01, 0x03), or LOW for linear order (e.g., 0x00, 0x01, 0x02, 0x03). It must be held static during operation and defaults to HIGH if left floating, selecting interleaved mode.
How does the CY7C1354C-166BZC handle output tristating during write operations?
The device automatically tristates DQa–DQd outputs during the data portion of any write sequence, regardless of OE state. This prevents bus contention without requiring external control logic. OE remains active for read operations and governs output enable only when the device is not executing a write data phase.
Can CY7C1354C-166BZC operate with 2.5V I/O while maintaining 3.3V core supply?
Yes - VDDQ (I/O power) accepts 2.5 V ± 0.2 V independently of VDD (core at 3.3 V ± 0.3 V). This allows direct interfacing with 2.5 V FPGA I/O banks while preserving full-speed 166 MHz operation and 3.5 ns tCO performance.
What is the role of the ADV/LD pin during burst and single-access modes?
During burst access, ADV/LD = HIGH advances the internal address counter; during single access or after deselection, ADV/LD = LOW loads a new starting address. It must be driven LOW before initiating any new access to ensure correct address latching, especially following chip disable sequences.
CY7C1354C-166BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1354C-166BZC FAQ
1.How can I place an order for CY7C1354C-166BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1354C-166BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1354C-166BZC reliable?
The price and inventory of CY7C1354C-166BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1354C-166BZC is usually 5 days.
3.What payment methods are accepted for CY7C1354C-166BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1354C-166BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1354C-166BZC?
CY7C1354C-166BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1354C-166BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1354C-166BZC?
For technical support, including CY7C1354C-166BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1354C-166BZC requirements.
6.How does Aetrix verify that CY7C1354C-166BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1354C-166BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1354C-166BZC meets industry standards.
7.What is the process for return or replacement of CY7C1354C-166BZC?
All CY7C1354C-166BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1354C-166BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1354C-166BZC part is unused and in its original packaging.
Return procedure for CY7C1354C-166BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1354C-166BZC Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
