Infineon Technologies CY7C1354C-200AXI

Overview

CY7C1354C-200AXI from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations. It operates at 200 MHz with 3.2 ns clock-to-output time, supports 3.3 V core and 2.5/3.3 V I/O supplies, and features byte-write capability, JTAG boundary scan, and ZZ sleep mode - deployed in network packet buffers and telecom line cards.

For engineers reviewing the CY7C1354C-200AXI datasheet, CY7C1354C-200AXI pinout, CY7C1354C-200AXI application, or CY7C1354C-200AXI equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous self-timed write timing, CEN-controlled clock gating, and TQFP-100 package compatibility with ZBT-style interfaces.

Technical Context

The CY7C1354C-200AXI implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to the same edge. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait states.

Burst addressing is configurable via the MODE strap pin (linear or interleaved), while write operations are controlled by four synchronous byte-write enables (BWa–BWd) and WE, all qualified by CEN. Output drivers are synchronously tristated during write data phases to prevent bus contention, and OE remains asynchronous but masked during critical transitions.

Key Specifications

Pinout & Package

CY7C1354C-200AXI is housed in a 100-pin Thin Quad Flat Package (TQFP) with 0.5 mm pitch, 14 mm × 20 mm body, and 1.4 mm height. The package supports standard reflow profiles and provides full signal access for 36-bit data, 18-bit address, and dual-rail power distribution.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L15PF and IS61WV25636B, CY7C1354C-200AXI uniquely delivers 200 MHz zero-wait-state throughput with integrated burst control, sleep mode, and JTAG - making it optimal for latency-constrained, feature-rich telecom and networking memory subsystems.

Availability

CY7C1354C-200AXI is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, baseband processor caches, and radar signal processing buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1354C-200AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1354C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput memory interfaces in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the MODE pin on CY7C1354C-200AXI?

The MODE pin is a static strap input that configures burst address sequencing: tied HIGH for interleaved burst order (e.g., 0, 2, 4, 6… then 1, 3, 5, 7…), pulled LOW for linear order (0, 1, 2, 3…). It is sampled at power-up and must remain stable during operation; no dynamic switching is supported.

How does the ZZ (sleep) mode reduce power consumption?

In ZZ mode, internal clocks and array biasing are gated, reducing supply current to ≤10 µA typical. The device retains data but requires a minimum 200 ns recovery time before next valid access. ZZ is asserted asynchronously and does not require CEN or CLK activity to enter or exit.

Can CY7C1354C-200AXI operate with VDDQ = 2.5 V while VDD = 3.3 V?

Yes - VDDQ is independent of VDD and may be set to either 2.5 V or 3.3 V. When VDDQ = 2.5 V, all DQ and DQP pins interface with 2.5 V logic families; VDD remains at 3.3 V for core operation. This dual-rail design enables mixed-voltage system integration without level shifters.

Is the CY7C1354C-200AXI pin-compatible with ZBT SRAMs?

Yes - it is explicitly designed as pin-compatible and functionally equivalent to ZBT devices (e.g., IDT 72V2115). Key signals (A0–A17, DQa–DQd, BWa–BWd, CE1/CE2/CE3, CLK, CEN, WE, OE, ADV/LD) map identically, enabling drop-in replacement in existing ZBT-based designs with identical PCB layout.