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Infineon Technologies CY7C1354C-200AXIT

Part No.:
CY7C1354C-200AXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1354C-200AXIT.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,105

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Product details

Overview

CY7C1354C-200AXIT from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 200 MHz with zero wait states, supports 3.3 V core supply and 2.5/3.3 V I/O, and delivers 3.2 ns clock-to-output timing. Its fully registered interface enables true back-to-back read/write operations in burst or single-access modes.

For engineers reviewing the CY7C1354C-200AXIT datasheet, CY7C1354C-200AXIT pinout, CY7C1354C-200AXIT application, or CY7C1354C-200AXIT equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), byte-write granularity (BWa–BWd), synchronous self-timed write control, JTAG boundary-scan support, and TQFP-100 package compatibility with ZBT-family designs.

Technical Context

The CY7C1354C-200AXIT implements a fully synchronous, pipelined memory architecture where all address, control, and data inputs are registered on the rising edge of CLK, and all outputs pass through output registers synchronized to the same edge. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait states.

It integrates internal burst logic with selectable linear or interleaved addressing (via MODE strap), synchronous self-timed write circuitry, and IEEE 1149.1-compliant boundary-scan testability. The device uses three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) for flexible bank decoding and supports ZZ sleep mode for low-power standby.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (256K × 36 organization), enabling 36-bit wide data paths for high-bandwidth packet buffering.
Max Clock Frequency 200 MHz - supports sustained 200 MT/s throughput with no wait states in pipelined operation.
Access Time 3.2 ns - defines minimum clock-to-output delay for timing-critical synchronous interfaces.
VDD Supply 3.3 V ± 0.3 V - core logic voltage; requires stable low-noise regulation for reliable register sampling.
VDDQ Supply 2.5 V or 3.3 V - independently configurable I/O voltage, allowing interoperability with mixed-voltage ASIC/FPGA I/O banks.
Burst Capability Linear or interleaved - selected via MODE pin; determines address increment pattern during burst reads/writes per industry-standard protocols.
Byte Write Control Four independent BWa–BWd signals - enable selective 8-bit writes within 36-bit word, reducing bus traffic and power vs full-word writes.

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, RoHS-compliant, with standard thermal pad layout and 0.5 mm pitch.

Pin/Terminal Circuit Role Design Meaning
CLK Clock input Synchronous edge-trigger for all registers; qualified by CEN; defines system timing reference for pipelined access.
CEN Clock enable Active-low synchronous gate for CLK; suspends operation without deselecting device, enabling cycle extension.
CE1, CE3 Chip enable (active-low) Combined with CE2 (active-high) for 3-signal bank decode; enables fine-grained memory mapping in multi-SRAM systems.
BWa–BWd Byte write select Per-byte write masking for DQa/DQPa through DQd/DQPd; allows partial-word updates without read-modify-write overhead.
ADV/LD Address advance/load Controls internal burst counter: HIGH advances address; LOW loads new address - critical for burst sequence control.
MODE Burst order strap Static input determining linear vs interleaved burst addressing - must be set at power-up and held stable.
ZZ Deep sleep control Active-low signal placing device in ultra-low-power state (<40 µA standby current); retains memory contents.

Key Features

Feature Design Value
No Bus Latency™ architecture Enables unlimited back-to-back read/write operations with zero wait states, maximizing effective bandwidth in burst-intensive applications.
Fully registered I/O All inputs and outputs are clocked registers, eliminating setup/hold violations and simplifying PCB routing in high-speed designs.
Synchronous self-timed writes On-chip write timing control eliminates external write pulse generation and guarantees data capture across voltage/temperature.
JTAG boundary scan (IEEE 1149.1) Supports production test and board-level debug without requiring additional test points or dedicated test logic.
Flexible I/O voltage (VDDQ) 2.5 V or 3.3 V selection allows direct interfacing with legacy 2.5 V FPGAs or modern 3.3 V controllers without level shifters.

Applications

Telecom Line Cards Network Packet Buffers

Use Scenario: High-speed packet buffering in OC-192/STM-64 line interface units handling 10 Gbps+ aggregate traffic.

IC Role / Device Role / Timing Role: Primary burst-access SRAM for ingress/egress FIFOs, synchronized to line-rate clocks with deterministic latency.

Use Value: 200 MHz pipelined operation sustains 7.2 GB/s (36-bit × 200 MHz) throughput, eliminating bottlenecks in deep-packet inspection pipelines.

Use Scenario: Temporary storage of fragmented IP packets in Layer 3 switches before reassembly or forwarding decisions.

IC Role / Device Role / Timing Role: Dual-port-capable buffer supporting concurrent read (forwarding engine) and write (ingress parser) operations.

Use Value: Byte-write capability (BWa–BWd) reduces average write energy by 75% vs full-word writes when storing variable-length headers.

Baseband Processing Units Radar Signal Processors

Use Scenario: Real-time channel estimation and equalization buffers in 4G/LTE eNodeB baseband subsystems.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for FFT/IFFT coefficient tables and intermediate results in pipeline stages.

Use Value: 3.2 ns clock-to-output ensures sub-cycle timing margin for 5 ns FPGA logic paths, enabling tighter pipeline scheduling.

Use Scenario: Storage of digitized ADC samples and processed Doppler bins in airborne phased-array radar front ends.

IC Role / Device Role / Timing Role: Burst-mode memory for streaming time-domain samples into FFT engines with precise address sequencing.

Use Value: Interleaved burst mode (via MODE pin) matches FFT twiddle factor access patterns, cutting average access latency by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L10PF 10 ns access time, 100 MHz max frequency, 256K × 36 organization, LVDS-compatible I/O, no MODE-selectable burst order. Limited to lower-speed control-plane buffering; lacks NoBL™ zero-wait-state capability for data-plane acceleration. Select when LVDS signaling or extended temperature range (−40°C to +85°C) is required over raw throughput.
ISSI IS61WV102436B 12 ns access, 83 MHz max, 1M × 36 organization, single 3.3 V supply (no VDDQ separation), no JTAG or ZZ mode. Suitable for cost-sensitive non-burst applications; cannot replace CY7C1354C-200AXIT in high-frequency pipelined systems. Choose only for legacy designs where pin count and feature set match but performance headroom is acceptable.

Compared with IDT72V2115L10PF and IS61WV102436B, the CY7C1354C-200AXIT delivers 2.4× higher throughput (200 vs 83 MHz), integrated burst control, and power management features essential for next-generation telecom infrastructure.

Availability

CY7C1354C-200AXIT is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and radar signal processors requiring stable component supply across long product lifecycles.

Supply support for CY7C1354C-200AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial and communications markets.

The CY7C1354C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory subsystems in carrier-grade networking and real-time signal processing equipment.

FAQ

What is the function of the MODE pin on CY7C1354C-200AXIT?

The MODE pin is a static strap input that selects burst addressing order: logic HIGH configures interleaved burst mode, while logic LOW selects linear burst mode. It must be driven to a defined voltage level during power-up and held stable thereafter, as it is sampled only at initialization and not re-evaluated during operation.

Can CY7C1354C-200AXIT operate with 2.5 V I/O while using 3.3 V core supply?

Yes - the device supports independent VDD (3.3 V) and VDDQ (2.5 V or 3.3 V) supplies. When VDDQ = 2.5 V, all I/O pins (DQa–DQd, DQPa–DQPd, BWa–BWd, etc.) operate at 2.5 V logic levels, enabling direct connection to 2.5 V FPGAs or ASICs without level-shifting circuitry.

How does the ZZ (sleep) mode affect data retention and wake-up time?

In ZZ mode (pin driven LOW), the device enters deep sleep with typical standby current <40 µA while retaining all stored data. Wake-up is synchronous: the first valid CLK edge after ZZ deassertion initiates internal recovery, and normal access resumes after one clock cycle - no additional latency or initialization sequence is required.

Is CY7C1354C-200AXIT pin-compatible with ZBT SRAMs?

Yes - the CY7C1354C-200AXIT is explicitly designed as pin-compatible and functionally equivalent to industry-standard ZBT SRAMs (e.g., IDT 72V2115). This includes identical pin assignments for CLK, CEN, CE1–CE3, WE, ADV/LD, BWa–BWd, DQa–DQd, and DQPa–DQPd in the 100-pin TQFP package.

CY7C1354C-200AXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.2 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1354C-200AXIT FAQ

1.How can I place an order for CY7C1354C-200AXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1354C-200AXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1354C-200AXIT reliable?

The price and inventory of CY7C1354C-200AXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1354C-200AXIT is usually 5 days.

3.What payment methods are accepted for CY7C1354C-200AXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1354C-200AXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1354C-200AXIT?

CY7C1354C-200AXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1354C-200AXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1354C-200AXIT?

For technical support, including CY7C1354C-200AXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1354C-200AXIT requirements.

6.How does Aetrix verify that CY7C1354C-200AXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1354C-200AXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1354C-200AXIT meets industry standards.

7.What is the process for return or replacement of CY7C1354C-200AXIT?

All CY7C1354C-200AXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1354C-200AXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1354C-200AXIT part is unused and in its original packaging.

Return procedure for CY7C1354C-200AXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1354C-200AXIT Tags

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